Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range

Boppana, Lakshmi; Reddy, M. Siva Pratap; Kumar, Ashwani; Reddy, V. Rajagopal

doi:10.1016/j.cap.2011.11.002

Cited by 44 publications

(27 citation statements)

References 44 publications

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“…Determination of R s is crucial because of the voltage drop (IR s ) it causes. In the literature, various methods are used to extract R s of a device. In this study, to obtain R s of MPS structure, we used Ohm's law, and also Cheungs' functions given below

\frac{d V}{d \ln (I)} = I R_{S} + n true(\frac{k T}{q} true)

H (I) = V - n \frac{k T}{q} \ln true(\frac{I}{A A^{*} T^{2}} true) = I R_{S} + n Φ_{B o}

where n , k , T , q , A , A * , and Φ Bo are ideality factor, Boltzmann constant, absolute temperature, electronic charge, rectifier contact area, Richardson constant [120 A/(cm −2 K 2 ) for n‐Si] and zero‐bias barrier height, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…When we investigate the possible current conduction mechanisms in a MPS structure with n‐type semiconductor, we also should consider the density of interface traps ( D it ) and their location with respect to the bottom of conduction band. D it of the MPS structure was calculated using equation introduced by Card and Rhoderick

D_{i t} (V) = \frac{1}{q} true[\frac{ε_{i}}{d} true(n (V) - 1 true) - \frac{ε_{s}}{W_{D}} true]

where ε s is the permittivity of semiconductor and W D is the depletion layer width. In addition, the energy gap between the energy level of interface traps and bottom of conductance band of an n‐type semiconductor is given by;

E_{c} - E_{s s} = q true(Φ_{e} - (V - I R_{s}) true)

…”

Section: Resultsmentioning

confidence: 99%

“…Here, Φ e is the effective barrier height and its derivation from I to V data is given in Refs. . Figure shows the D it vs. E c – E ss plots of the MPS structure between 100 and 200 K whereas the inset figure covers the temperature range 250–350 K. It can be seen that temperature has various effects on the interface traps.…”

Section: Resultsmentioning

confidence: 99%

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Investigation of current‐voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide

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et al. 2013

Polymer Engineering & Sci

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Temperature dependent current-voltage (I-V) measurements of Au/Polyvinyl Alcohol 1 Bi 2 O 3 /n-Si structure were conducted between 100 and 350 K for investigating the temperature dependence of I-V characteristics and current conduction mechanisms in the structure. Series resistance of the structure is calculated using Ohm's law and Cheungs' method. Ideality factor (n) and zero-bias barrier height (U Bo ) were obtained considering thermionic emission theory. From 100 to 350 K, n changed from 32.1 to 3.54, and U Bo changed from 0.27 to 0.99 eV. Obtained temperature dependent values of n and U Bo suggested that thermionic emission is not the dominant current conduction mechanism. Therefore, Ln(I)-Ln(V) curves of the studied structure were plotted for investigating current conduction mechanisms in the structure and current flow is explained considering space charge limited current. Moreover, density of interface states (D it ) in the structure were calculated and its temperature dependence was investigated such that D it values are reduced to the order of $10 13 eV 21 cm 22 from $10 14 eV 21 cm 22 with increasing temperature.

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\frac{d V}{d \ln (I)} = I R_{S} + n true(\frac{k T}{q} true)

H (I) = V - n \frac{k T}{q} \ln true(\frac{I}{A A^{*} T^{2}} true) = I R_{S} + n Φ_{B o}

Section: Resultsmentioning

confidence: 99%

D_{i t} (V) = \frac{1}{q} true[\frac{ε_{i}}{d} true(n (V) - 1 true) - \frac{ε_{s}}{W_{D}} true]

E_{c} - E_{s s} = q true(Φ_{e} - (V - I R_{s}) true)

…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of current‐voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide

Yıldırım

Gökçen

Tunç

et al. 2013

Polymer Engineering & Sci

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“…Using a stainless-steel mask with a square opening, the electrodes of our diode were measured at 1 mm 2 . The A* value was 26.4 A·cm −2 ·K −2 (based on effective mass m* = 0.22 × m e for GaN, m e is electron mass) [4,5,13]. The ideality factor (n) from Equation (1) can be determined by [5,21,23]:…”

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 99%

“…Previous studies created the thin, high-quality insulator layer between the metal and semiconductor that is used to create a metal-oxide-semiconductor (MOS) structure, which was an important factor for the high-performance of MOS devices [6][7][8][9][10]. Researchers investigated the contact of MOS layers via various approaches, e.g., Al/HfO 2 /p-Si [7], Pt/oxide/n-InGaP [10], Pt/SiO 2 /n-InGaN [11], Pd/NiO/GaN [12], Au/SiO 2 /n-GaN [13], Au/SnO x /n-LTPS/glass [14], Pt/SiO 2 /n-GaN [6,15], Pt/Oxide/Al 0.3 Ga 0.7 As [16], Pd/HfO 2 /GaN [17], and Al/SnO 2 /p-Si (111) [18].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

et al. 2019

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The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400 °C. Using scanning electron microscope (SEM), the thicknesses of the electrodes, insulator SiO2 layer, and p-GaN were found to be ~250 nm, 70 nm, and 1 µm, respectively. By Hall measurement of a p-Mg-GaN film on an SiO2/Si (100) substrate at room temperature, the hole’s concentration (Np) and carrier mobility (μ) were found to be Np = 4.32 × 1016 cm−3 and μ = 7.52 cm2·V−1·s−1, respectively. The atomic force microscope (AFM) results showed that the surface topography of the p-GaN film had smoother, smaller grains with a root-mean-square (rms) roughness of 3.27 nm. By I–V measurements at room temperature (RT), the electrical properties of the diode had a leakage current of ~4.49 × 10−8 A at −1 V, a breakdown voltage of −6 V, a turn-on voltage of ~2.1 V, and a Schottky barrier height (SBH) of 0.67 eV. By C–V measurement at RT, with a frequency range of 100–1000 KHz, the concentration of the diode’s hole increased from 3.92 × 1016 cm−3 at 100 kHz to 5.36 × 1016 cm−3 at 1 MHz, while the Fermi level decreased slightly from 0.109 to 0.099 eV. The SBH of the diode at RT in the C–V test was higher than in the I–V test because of the induced charges by dielectric layer. In addition, the ideality factor (n) and series resistance (Rs) determined by Cheung’s and Norde’s methods, other parameters for MOS diodes were also calculated by C–V measurement at different frequencies.

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Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width

Chun

Agarwal

et al. 2018

Adv Elect Materials

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GaN‐based vertical transistors have demonstrated its excellent properties for high‐power and high‐frequency electronic devices. This work introduces a GaN‐based static induction transistor (SIT) which is another form of vertical GaN transistors without requiring any p‐type GaN and gate dielectrics for its operation. Processing strategy to generate the GaN SIT with a sub‐micrometer fin width involves photoresist (PR)‐assisted planarization with an understanding of dry etch parameters for the planar PR surface. The efficacy of this process is demonstrated by the device's triode‐like output characteristics with high current density (0.65 kA cm−2) and low ON resistance (1.48 mΩ cm2) at 1 V of drain voltage. In addition, the electrical properties such as current density and modulation are examined depending on the fin width of GaN SIT. The result reveals that the size reduction in the GaN SIT utilizing the sub‐micrometer fin as a channel could increase the current modulation, but it could decrease the current density because of the raised potential minima due to the depletion region overlap. It is believed that the GaN SIT demonstrating high blocking voltage and low ON resistance would present a very promising class of transistor for next‐generation high‐power and high‐frequency electronics.

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Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range

Cited by 44 publications

References 44 publications

Investigation of current‐voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide

Investigation of current‐voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width

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