Electrical transport, Meyer–Neldel rule and oxygen sensitivity of Bi₂S₃nanowires

Abstract

The electrical properties of Bi 2 S 3 nanowire bundles were investigated. The nanowires were synthesized using a solventless reaction involving a single-source bismuth thiolate precursor and stabilizing organic ligands. For electrical testing, nanowires were dispersed in solution and drop cast onto a substrate with gold contact pads patterned by electron beam lithography techniques (EBL). Electrical connections were made by depositing platinum interconnect lines between the nanowires and the gold pads by focused ion beam (FIB) chemical vapour deposition. Current-voltage (I -V ) curves were measured under nitrogen as a function of temperature. The data revealed activated transport that followed a Meyer-Neldel relationship. Annealing under vacuum decreased the nanowire resistance by nearly four orders of magnitude. The annealed nanowires followed an inverse Meyer-Neldel relationship. Illumination with UV light increased the current, and air exposure decreased the current under constant applied bias. M Supplementary data files are available from stacks.

Space charge limited current mechanism in Bi2S3 nanowires

“…One possibility to fabricate Bi 3 S 3 nanowire devices exhibiting linear IVCs is post-annealing of the nanowire samples as described in Ref. 18. In our work, Ohmic contacts with linear IVCs were obtained by etching of the nanowire contact areas in ammonium polysulfide water solution ðNH 4 Þ 2 S n Ä H 2 O ð1 Ä 9Þ at 40 C, 5 min before metal deposition (Figure 1(c)).…”

“…16 Numerous approaches have been used to obtain Bi 2 S 3 with excess sulfur or deficiency that can be easily tuned during the growth or by annealing procedures in an appropriate atmosphere. [16][17][18][19] In this article, we report the electrical characterization of individual Bi 2 S 3 nanowires grown in an anodized aluminum oxide, AAO, template via thermal decomposition. The temperature dependent current-voltage characteristics (IVCs) of the nanowires indicate that an SCLC mechanism dominates over Ohmic conduction at temperatures below 160 K. To the best of our knowledge, SCLC has not been previously reported for Bi 2 S 3 .…”

Facile Synthesis, Characterization, and Visible-light Photocatalytic Activities of 3D Hierarchical Bi2S3 Architectures Assembled by Nanoplatelets

“…With a direct narrow band gap of around 1.3 eV, bismuth sulfide (Bi 2 S 3 ), emerging as one promising member of group V-VI binary semi-conductors, has been attracting considerable attention due to its wide range of application in the field of solar cells [8,9], photo-detectors [10][11][12][13][14], gas sensors [14], thermoelectric devices [15], X-ray computed tomography imaging [16], lithium-ion batteries [17][18][19][20], and photocatalysis [21][22][23]. Bi 2 S 3 micro/nanostructures with various morphologies, including one-dimensional (1D) nanorods/nanowires, two-dimensional (2D) nanosheets/flakes, and three-dimensional (3D) hierarchical complex architectures, have been successfully fabricated in previous studies [10][11][12][13][14][15][17][18][19][23][24][25][26], since the properties of functional nanostructured materials are strongly dependent on the tailored morphology, microstructure and surface properties.…”

“…Bi 2 S 3 micro/nanostructures with various morphologies, including one-dimensional (1D) nanorods/nanowires, two-dimensional (2D) nanosheets/flakes, and three-dimensional (3D) hierarchical complex architectures, have been successfully fabricated in previous studies [10][11][12][13][14][15][17][18][19][23][24][25][26], since the properties of functional nanostructured materials are strongly dependent on the tailored morphology, microstructure and surface properties. Among them, 3D hierarchical complex architectures have exhibited excellent properties for applications in gas sensors, lithium batteries, and photocatalysts due to their large surface area and facile electron (ion) transport.…”

3D Hierarchical Bi2S3 Nanostructures by Polyvinylpyrrolidone (PVP) and Chloride Ion-Assisted Synthesis and Their Photodetecting Properties

“…Bismuth sulfide (Bi 2 S 3 ) that is an important member of group V-VI binary semiconductors, has drawn increasing attention in solar cells [1], photodetectors [2][3][4][5][6][7][8][9][10], gas sensors [11], Schottky diode [12], lithium-ion battery [13], X-ray computed tomography imaging (CT) [14], and thermoelectric devices [15]. In recent years, various morphologies of Bi 2 S 3 micro-/nanostructures, including one-dimensional (1D) nanoribbons/nanowires [16][17][18][19] and nanorods [20], two-dimensional (2D) nanosheets [10], and three-dimensional (3D) hierarchically complex architectures [13,16], have been fabricated.…”