Electrical transport characterization of nano CMOS devices with ultra-thin silicon film

Ghibaudo, G.; Mouis, M.; Pham-Nguyen, Loan; Bennamane, K.; Pappas, Ilias O.; Cros, A.; Bidal, G.; Fleury, Dominique; Claverie, A.; Benassayag, Gérard; Fazzini, Pier Francesco; Fenouillet-Béranger, C.; Monfray, S.; Bœuf, F.; Cristoloveanu, S.; Skotnicki, T.; Collaert, N.

doi:10.1109/iwjt.2009.5166220

Cited by 18 publications

(7 citation statements)

References 8 publications

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“…This could be interpreted as an increasing contribution of scattering mechanisms in shorter devices (below 70 -80nm), possibly due to neutral defects. These defects may originate from source-drain implantation-induced Si interstitials in undoped film and halo extra doping in bulk architectures 57 . Finally, the backscattering coefficient r has been extracted using Eq.…”

Section: Resultsmentioning

confidence: 99%

ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

Clerc

Ghibaudo

2013

Int. J. Hi. Spe. Ele. Syst.

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The quasi-ballistic nature of transport in end of the roadmap MOSFETs device is expected to lead to significant on state current enhancement. The current understanding of such mechanism of transport is carefully reviewed in this chapter, underlining the derivation and limits of corresponding analytical models. In a second part, different strategies to compare these models to experiments are discussed, trying to estimate the “degree of ballisticity” achieved in advanced technologies.

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Section: Resultsmentioning

confidence: 99%

ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

Clerc

Ghibaudo

2013

Int. J. Hi. Spe. Ele. Syst.

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“…It should be noted that the threshold voltages of these devices are almost the same all the way down to 50 nm with slight RSCE for channel lengths below � 120 nm due to halo implants. In bulk devices, it is already known that flMRlin reduction at short channel length is due to mobility deg radation due to halo implants, neutral defects, remote Coulomb scattering (RCS) and to a smaller extent ballistic transport [21,22,27]. The origin of this degradation is similar to that of the effective mobility.…”

Section: It Measurement and Resultsmentioning

confidence: 99%

Magnetoresistance mobility extraction in the saturation regime of short channel MOS devices

Narasimhamoorthy

Ghibaudo

Mouis

et al. 2012

2012 International Semiconductor Conference Dresden-Grenoble (ISCDG)

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The effect of magnetic field in the saturation regime of sub �m MOSFETs is being reported here for the first time. The study was based on bulk MOSFETs featuring a high-Klmetal gate with an equivalent oxide thickness of 2.4 nm. Channel length ranged from 1 �m down to 50 nm, while width was kept constant at 10 �m. It is found that it is possible to extract a magnetoresis tance mobility �MR even in the saturation regime of operation and in turn study the observed �MR against channel length, tem perature, drain voltage and gate voltage. For these sub-micron devices, electron transport is influenced by the high electric field that exists in the channel and velocity saturation, velocity over shoot and even quasi-ballistic effects could playa role for the shortest channel lengths Here, the observed �MR behavior is well interpreted using velocity saturation and overshoot effects.

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“…One may argue that a second order dependence on GS may be responsible for the nonlinearity of the Y-function as mentioned in [38] and more recently by Cros et al [5]. This approach was efficient for a very thin gate oxide (<10 nm) where interface scattering is a dominant issue such that the mobility is found to be more degraded at the top interface than at the bottom interface, indicating that defects are more numerous at the top channel region [39]. But in our case, due to the relative thick oxide layer of our devices (25 nm), the latter consideration is not relevant so we could limit our analysis to the first order dependence for moderate values of GS .…”

Section: Behavior Of the Low Field Mobility At Low Temperaturementioning

confidence: 89%

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Karsenty

Chelly

2014

Active and Passive Electronic Components

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The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was increased, the opposite effect was observed for GRC. The low field electron mobility and series resistance SD values were extracted using a method based on Y-function for both the temperatures. If SD low values were found for UTB, very high values (>1 MΩ) were extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm 2 /Vs) and is decreasing by lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of the Yanalysis in discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous electrical behavior.

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Electrical transport characterization of nano CMOS devices with ultra-thin silicon film

Cited by 18 publications

References 8 publications

ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

Magnetoresistance mobility extraction in the saturation regime of short channel MOS devices

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

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