Electrical transport characteristics of Au/n-GaN Schottky diodes

Benamara, Z.; Akkal, B.; Talbi, A.; Gruzza, B.

doi:10.1016/j.msec.2005.10.016

Cited by 16 publications

(6 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The values of φ b and η at room temperatures was found to be found to be 0.55 eV and 2.11 respectively. Earlier report on Au/polar GaN based Schottky diode shows higher barrier hieght value (0.84 eV at 300 K) compared with our results [19]. The reduced barrier for Au/semipolar GaN Schottky diode could be explained interms of difference in the surface band bending.…”

Section: Contributedsupporting

confidence: 58%

Molecular beam epitaxial growth of (1 1 ‐2 2) GaN on m‐plane sapphire

Rajpalke

Kumar

Roul

et al. 2013

Phys. Status Solidi C

View full text Add to dashboard Cite

The structural and optical properties of semipolar (1 1 ‐2 2) GaN grown on m‐plane (1 0 ‐1 0) sapphire substrates by molecular beam epitaxy were investigated. An inplane orientation relationship was found to be [1 ‐1 0 0] GaN || [1 2‐1 0] sapphire and [‐1 ‐1 2 3] GaN || [0 0 0 1] sapphire for semipolar GaN on m‐plane sapphire substrates. The near band emission (NBE) was found at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E2 (high) peak position observed at 569.1 cm–1, which indicates that film is compressively strained. Schottky barrier height (φb) and the ideality factor (η) for the Au/ semipolar GaN Schottky diode found to be 0.55 eV and 2.11, respectively obtained from the TE model. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Contributedsupporting

confidence: 58%

Molecular beam epitaxial growth of (1 1 ‐2 2) GaN on m‐plane sapphire

Rajpalke

Kumar

Roul

et al. 2013

Phys. Status Solidi C

View full text Add to dashboard Cite

show abstract

“…7), as a function of kT/q (in triangles for AuGe450 and circles for AuGe 850) and add, to the same graph, the theoretic E 0 values that obey to Refs. [38][39][40]: • the TE mode (line in dots on Fig. 7): by considering that in this type of conduction, n is close to 1 (Eq.…”

Section: Variation Of N And˚b Of Pseudo-schottky Diodes With Temperaturementioning

confidence: 98%

Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Varenne

Brunet

Pauly

et al. 2008

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

“…By comparison, with Cheung's method, the modified Norde function was also used to define the effective barrier height of diodes. It is followed by the equation below [12,13,[34][35][36].…”

Section: I-v Measurementsmentioning

confidence: 99%

“…Based on Equation (5) and the plot of the dV/d(lnI) versus I from Figure 6, the series resistance R s and ideality n can be calculated the from the the slope and the intercept [11,33,34]. Table 1 shows all detailed parameters of the I-V measurement for both devices tested at different temperatures.…”

Section: I-v Measurementsmentioning

confidence: 99%

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

et al. 2019

View full text Add to dashboard Cite

The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

show abstract

Electrical transport characteristics of Au/n-GaN Schottky diodes

Cited by 16 publications

References 15 publications

Molecular beam epitaxial growth of (1 1 ‐2 2) GaN on m‐plane sapphire

Molecular beam epitaxial growth of (1 1 ‐2 2) GaN on m‐plane sapphire

Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Contact Info

Product

Resources

About