Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Promotion of NO2 Sensing Performance with Ag Modified DDT/Au/GaAs-Based Schottky Diode

“…From reported research, many types of sensing devices are used in gas sensors, i.e., electrochemical, [7][8][9][10][11][12][13][14][15] chemiresistive-type [16][17][18][19][20][21][22][23][24][25] and Schottky-type devices. [26][27][28][29][30] The electrochemical sensor are based on the solidelectrolyte with metal oxide working electrode. [12][13][14][15] The chemiresistive-type of gas sensors have mainly been based on metal oxides, such as SnO 2 , 19,20 ZnO, 21,22 WO 3 , 23,24 and Fe 2 O 3 .…”

“…[12][13][14][15] The chemiresistive-type of gas sensors have mainly been based on metal oxides, such as SnO 2 , 19,20 ZnO, 21,22 WO 3 , 23,24 and Fe 2 O 3 . 25 On the other hand, semiconductor materials including n-Si, 26 InP, 27 Si/Al, 28 InGaP, 29 and GaAs 30 have been used in Schottky-type gas sensors. Schottky-type gas sensors show the advantages of small size, fast sensing response, low cost, and high sensitivity.…”

“…Schottky-type gas sensors show the advantages of small size, fast sensing response, low cost, and high sensitivity. [26][27][28][29][30] In order to enhance the sensing performance, noble metal and organic self-assembled monolayers (SAM) have been used in gas sensors. 31,32 Furthermore, the metal/organic monolayer modification on the surface of sensing devices was reported to reveal an enhanced sensing property.…”