Electrical/thermoelectric characterization of electrodeposited Bi x Sb2−x Te3 thin films

Yoo, In-Joon; Lim, Dong Chan; Myung, Nosang V.; Jeong, Young-Keun; Kim, Jae Won; Lee, Kyu Hwan; Lim, Jae-Hong

doi:10.1007/s13391-013-2246-8

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…A suitable RE could be selected based on the type of electrolyte and pH value. As mentioned above, most of the electrolytes for Bi 2 Te 3 deposition are acidic, so the commonly used REs are calomel electrode (SCE, mercury (Hg))/mercury chlorides (Hg 2 Cl 2 )/(saturated potassium chloride (KCl)) [148] or silver (Ag)/silver chloride (AgCl) electrode (Ag/AgCl/(saturated KCl)) [149]. SCE is widely used in the organic solution system.…”

Section: Reference Electrodementioning

confidence: 99%

Recent advances of electrodeposition of Bi₂Te₃and its thermoelectric applications in miniaturized power generation and cooling

Shi

Zheng

Wang

et al. 2022

International Materials Reviews

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Thermoelectric (TE) technology enables direct conversion between thermal and electrical energies and thus has been regarded as an alternative for energy harvesting and refrigeration. Bismuth telluride (Bi 2 Te 3 ) is the most widely used TE material at room temperature due to its high figure of merit (∼1). Since the first publication on the electrodeposition of Bi 2 Te 3 films in 1994, a large number of publications has emerged in the last two decades, owing to its advantages such as simple and safe preparation, high deposition rate, convenient micromachining, good compatibility to semiconductor microfabrication techniques and so on. This article reviews the recent research progress in the electrodeposition of Bi 2 Te 3 and its application in TE devices. Additionally, an outlook towards the future development of this area has also been discussed.

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Section: Reference Electrodementioning

confidence: 99%

Recent advances of electrodeposition of Bi₂Te₃and its thermoelectric applications in miniaturized power generation and cooling

Shi

Zheng

Wang

et al. 2022

International Materials Reviews

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“…Multilayer composite structures, such as GST/Ga 30 Sb 70 [7] and GST/GeTe [8], have been conducted to improve the device stability, and due to the existence of the multi-interface structure, the composite thin films show a low thermal conductivity, which will contribute to decreasing the power consumption. Nowadays, the replacement materials of GST, which have high density and low power consumption, are being studied [9][10][11][12]. Candidate materials must have a low RESET current and long data retention.…”

Section: Introductionmentioning

confidence: 99%

Sb₇Te₃/Ge multilayer films for low power and high speed phase-change memory

Chen¹,

Wu²,

Zhai³

et al. 2017

Semicond. Sci. Technol.

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Phase-change memory has attracted enormous attention for its excellent properties as compared to flash memories due to their high speed, high density, better date retention and low power consumption. Here we present Sb 7 Te 3 /Ge multilayer films by using a magnetron sputtering method. The 10 years' data retention temperature is significantly increased compared with pure Sb 7 Te 3 . When the annealing temperature is above 250 °C, the Sb 7 Te 3 /Ge multilayer thin films have better interface properties, which renders faster crystallization speed and high thermal stability. The decrease in density of ST/Ge multilayer films is only around 5%, which is very suitable for phase change materials. Moreover, the low RESET power benefits from high resistivity and better thermal stability in the PCM cells. This work demonstrates that the multilayer configuration thin films with tailored properties are beneficial for improving the stability and speed in phase change memory applications.

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“…1,2) Recent developments of TE thin films have, in particular, renewed interest in these materials with their prospect for new microelectronic applications by enabling the integration of TE cooling devices into microelectronic systems. [3][4][5][6][7][8][9][10][11] Compounds such as Bi 2 Te 3 (for ntype) and Sb 2 Te 3 or Bi 0.5 Sb 1.5 Te 3 (for p-type) have been widely adopted for such applications, since they have a high TE efficiency near room temperature.…”

Section: Introductionmentioning

confidence: 99%

Study on the contact resistance of various metals (Au, Ti, and Sb) on Bi–Te and Sb–Te thermoelectric films

Yong¹,

Na²,

Gang³

et al. 2016

Jpn. J. Appl. Phys.

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In this study, we explore various electrode materials (Au, Ti, and Sb) for use as contact materials on Bi2Te3 and Sb2Te3 thermoelectric films. Using the transmission line method (TLM), we measured the specific resistivity of the contacts, which showed that Au has the lowest contact resistivity for both the thermoelectric films (after annealing): 2.7 × 10−10 Ω m2 for Bi2Te3 and 2.9 × 10−11 Ω m2 for Sb2Te3. The specific contact resistivity data suggest that the dominant factor for the contact properties is interface states. After annealing, the contact resistivity does not change much for the Bi2Te3 contacts while it drops greatly for the Sb2Te3 ones. Analysis of the carrier transport mechanism across the contacts discloses that changes in the carrier concentration in the thermoelectric films after annealing are responsible for the different behaviors.

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Electrical/thermoelectric characterization of electrodeposited Bi x Sb2−x Te3 thin films

Cited by 5 publications

References 19 publications

Recent advances of electrodeposition of Bi₂Te₃and its thermoelectric applications in miniaturized power generation and cooling

Recent advances of electrodeposition of Bi₂Te₃and its thermoelectric applications in miniaturized power generation and cooling

Sb₇Te₃/Ge multilayer films for low power and high speed phase-change memory

Study on the contact resistance of various metals (Au, Ti, and Sb) on Bi–Te and Sb–Te thermoelectric films

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Electrical/thermoelectric characterization of electrodeposited Bi x Sb2−x Te3 thin films

Cited by 5 publications

References 19 publications

Recent advances of electrodeposition of Bi2Te3and its thermoelectric applications in miniaturized power generation and cooling

Recent advances of electrodeposition of Bi2Te3and its thermoelectric applications in miniaturized power generation and cooling

Sb7Te3/Ge multilayer films for low power and high speed phase-change memory

Study on the contact resistance of various metals (Au, Ti, and Sb) on Bi–Te and Sb–Te thermoelectric films

Contact Info

Product

Resources

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Recent advances of electrodeposition of Bi₂Te₃and its thermoelectric applications in miniaturized power generation and cooling

Recent advances of electrodeposition of Bi₂Te₃and its thermoelectric applications in miniaturized power generation and cooling

Sb₇Te₃/Ge multilayer films for low power and high speed phase-change memory