Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures

Ohno, Y.; Arata, Ikuo; Matsukura, F.; Ohno, Hideo; Young, D. K.; Beschoten, Bernd; Awschalom, D. D.

doi:10.1016/s1386-9477(01)00143-6

Cited by 46 publications

(8 citation statements)

References 6 publications

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“…The main obstacle is that the highest Curie temperature ( T C ) of GaMnAs is reported to be 173 K [5], which is far below room temperature. Nevertheless, spin-involved devices based on GaMnAs, namely a spin-polarized light emitter [6], a spin FET [7] and a spin valve [8], have been demonstrated at low temperature. Now it is well accepted that GaMnAs can be used as a test bed for future spintronics devices [9].…”

Section: Background and Introductionmentioning

confidence: 99%

Mn-doped Ge and Si: A Review of the Experimental Status

Zhou

Schmidt

2010

Materials

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Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are ferromagnetic only at well below room temperature. An interesting alternative could be magnetic semiconductors based on elemental semiconductors, also owing to their compatibility with Si microelectronics. In the last decades, considerable amount of work has been devoted to fabricate Mn-doped Ge and Si FMS. In this article, the structural, magnetic and magneto-transport properties of Mn-doped Ge and Si will be reviewed.

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Section: Background and Introductionmentioning

confidence: 99%

Mn-doped Ge and Si: A Review of the Experimental Status

Zhou

Schmidt

2010

Materials

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“…Наиболее распространен метод низкотемпера-турной молекулярно-лучевой эпитаксии (НТ-МЛЭ) [3]. Этим методом, например, получены слои GaAs : Mn, которые имеют температуру Кюри ∼ 110 K и могут быть интегрированы в квантово-размерные структуры для формирования таких приборов, как спиновый свето-излучающий диод [4] и резонансно-туннельный диод [2]. Альтернативными методами получения ФМП являются газофазная эпитаксия из металлоорганических соедине-ний [5], ионная имплантация с последующим импульс-ным лазерным отжигом [6,7] и импульсное лазерное на-несение (ИЛН) [8].…”

Section: Introductionunclassified

Модифицирование Свойств Ферромагнитных Слоев На Основе Соединений a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- Импульсным Лазерным Отжигом

Вихрова¹,

Данилов²,

Звонков³

et al. 2017

Физика Твердого Тела

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С целью повышения концентрации электрически-активного Mn в слоях полупроводников A3B5 : Mn выполнены эксперименты по лазерному отжигу. Использован эксимерный лазер LPX-200 на KrF с длиной волны 248 nm и длительностью импульса ~30 ns. Экспериментально показано, что при энергии импульса эксимерного лазера >230 mJ/cm2 концентрация дырок в слоях GaAs : Mn увеличивается до 3·1020 cm-3. Отрицательное магнетосопротивление и аномальный эффект Холла с петлей гистерезиса для отожженных образцов GaAs : Mn сохраняются вплоть до 80-100 K. Аналогичные изменения в результате лазерного отжига наблюдаются и для слоев InAs : Mn. Работа выполнена в рамках реализации государственного задания (проект N 8.1751.2017/ПЧ) Минобрнауки России и Программы фундаментальных исследований ОФН РАН II.4 Спиновые явления в твердотельных наноструктурах и спинтроника" (тема 31). DOI: 10.21883/FTT.2017.11.45049.12k

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“…Magnetic semiconductors have attracted extensive attention in the past decade due to their potential applications for spintronics [1,2]. A high Curie temperature (Tc)—considered as crucial to making useful spintronic devices a reality—has been predicted for Mn-doped wide-bandgap GaN (GaN:Mn) semiconductors [3].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges

et al. 2017

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The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping. When further combined with the micro-Raman results, the magnetism in GaN:Mn might be related not only to Mn concentration, but also to some kinds of built-in defects introduced together with the Mn doping or the SFs.

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Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures

Cited by 46 publications

References 6 publications

Mn-doped Ge and Si: A Review of the Experimental Status

Mn-doped Ge and Si: A Review of the Experimental Status

Модифицирование Свойств Ферромагнитных Слоев На Основе Соединений a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- Импульсным Лазерным Отжигом

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges

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