Electrical resistivity in sputtered Co90Fe10/Ag GMR multilayers

Abstract

An analysis of room temperature electrical transport properties in sputtered (Co90Fe10/Ag) giant magnetoresistive multilayers is presented. The Co90Fe10 and Ag thickness ranges are both well below bulk electron mean free paths. Layer thickness dependent resistivity is observed and compared to resistivity measurements of single layer Co90Fe10 and Ag films.

Effects of controlling Cu spacer inter-diffusion by diffusion barriers on the magnetic and electrical stability of GMR spin-valve devices

“…The lower device temperature as well as the smaller temperature gradient generated at the Cu/CoFe interface as shown in Fig. 7(b) due to the lower resistivity of CoFe (r Co 90 Fe 10 ¼ $ 20 mWÀcm) compared with that of Co (r Co ¼ $ 450 mWÀcm) in thin film [26,27], and the more effectively controlled Cu spacer interdiffusion due to the insolubility of both Co and Fe with Cu [28] are assumed to be the main physical reason for the technical promises of CoFe diffusion barrier for successfully controlling the magnetic degradation of EBGMR SVSDs.…”

Electronic scattering from Co/Cu interfaces:In situmeasurement and comparison with theory

“…Nevertheless, even if these parameters are included in semiclassical free-electron models, experimental conductivities tend to be underestimated for thick ferromagnetic layers and overestimated for thin ones. [5][6][7] Several models of GMR exist which treat the band structure of the multilayers in a realistic fashion; [8][9][10][11][12] some of these 8,10 indicate that the electronic structure provides a source of GMR distinct from spin-dependent scattering. The conductivities calculated through realistic treatment of the multilayer band structure have not yet been compared in much detail with experiment.…”