Electrical reliability, multilevel data storage and mechanical stability of MoS<sub>2</sub>-PMMA nanocomposite-based non-volatile memory device

Bhattacharjee, Snigdha; Sarkar, Pranab Kumar; Prajapat, Manoj; Roy, Asim

doi:10.1088/1361-6463/aa71e9

Cited by 44 publications

(33 citation statements)

References 39 publications

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“…In the last 4 years, a number of different strategies have been explored to improve the switching/retention capability of MoS 2 ‐based ReRAMs, for example, the preparation of core‐shell structures consisting of MoS 2 thin layers (core) and metal–organic frameworks (shell, e.g., zeolitic imidazolate frameworks, ZIF‐8), the synthesis of hybrid nanofibers based on MoS 2 nanosheets and achiral copolymers—such as Pluronic P123 (PEO 20 PPO 70 PEO 20 )—as well as the combination of MoS 2 with different dielectric polymers, including poly(methyl methacrylate) (PMMA) and poly(vinyl alcohol) (PVA)…”

Section: D Materials “Beyond” Graphene For Resistive Nvmsmentioning

confidence: 99%

Nonvolatile Memories Based on Graphene and Related 2D Materials

et al. 2019

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The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high‐capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon‐based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low‐cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random‐access, flash, magnetic and phase‐change memories. The physical and chemical mechanisms underlying the switching of GRM‐based memory devices studied in the last decade are discussed. Although at this stage most of the proof‐of‐concept devices investigated do not compete with state‐of‐the‐art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.

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Section: D Materials “Beyond” Graphene For Resistive Nvmsmentioning

confidence: 99%

Nonvolatile Memories Based on Graphene and Related 2D Materials

et al. 2019

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“…Extensive studies of composites prepared from conducting and dielectric materials, whose combination enhances the resistive switching effect and improves its stability are underway. For instance, a resistive switching effect with the relation of current in low‐resistive (ON) and high‐resistive (OFF) states amounting to three to five orders was observed in composites consisting of a polymer base and nonorganic nanoparticles, fully organic polymers, films consisting of a polymer in combination with carbon nanotubes, titanium nanotubes, or Cu‐SiO 2 nanofilaments . Also, it was shown that graphene oxide (GO) based structures with Au nanoparticles can demonstrate an ON/OFF current ratio reaching nine orders …”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Ivanov

Гутаковский

Kotin

et al. 2019

Adv Elect Materials

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and sulfides (MoS), [10][11][12] have been studied. Extensive studies of composites prepared from conducting and dielectric materials, whose combination enhances the resistive switching effect and improves its stability are underway. For instance, a resistive switching effect with the relation of current in low-resistive (ON) and highresistive (OFF) states amounting to three to five orders was observed in composites consisting of a polymer base and nonorganic nanoparticles, [13][14][15][16][17][18][19][20][21] fully organic polymers, [22] films consisting of a polymer in combination with carbon nanotubes, [23,24] titanium nanotubes, [25] or Cu-SiO 2 nanofilaments. [26] Also, it was shown that graphene oxide (GO) based structures with Au nanoparticles can demonstrate an ON/ OFF current ratio reaching nine orders. [27] Switchings in films based on vanadium and its oxides present a matter of much discussion. Both the magnitude and pattern of the effect depend on the composition of the oxide, [28,29] on the structure of the film (continuous chemical vapor deposition (CVD)-grown film or suspension consisting of separate nanoparticles), [30,31] and on the synthesis and formation conditions of the structures. [32] In the case of VO 2 , a temperature-dependent resistive switching effect was observed: for a VO 2 -based film to be switched into the low-resistive state, heating of the samples to 60-70 °C was required. [33] VO x films (a mixed-valency phase which can contain various compounds, for instance, V 2 O 3 , V 3 O 5 , V 3 O 7, etc. [34] ), synthesized using CVD or application of a nanoparticle suspension (crystal hydrates prepared by sol-gel method, incorporating water molecules V 2 O 5 •nH 2 O with n ≤ 2, and dependent on the annealing temperature of the sample), [35] demonstrate a resistive switching effect due to the action of an electric field. In the majority of cases, this effect was attributed to the formation of filaments which, with the passage of time, (under the action of the field) can become indestructible because of the irreversible migration of oxygen, with the resistive cell no longer returning into the high-resistive state. Oxide V 2 O 5 in the context of the irreversible migration of oxygen proved to be a more stable material, with the resistive switching effect observed without additional heating of the structure. On the whole, in vanadium oxide (V 2 O 5 ) compounds a resistive switching effect with an ON/OFF current Composite films consisting of fluorinated graphene flakes with vanadium oxide (V 2 O 5 ) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V 2 O 5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 10 6 -10 9 for films 20-50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switchi...

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“…4(a) could be strongly attributed to the presence of MoS 2 -GQDs heterostructure in the tristable switching device as there is a negligible storage capability for the reference device without the integration of both MoS 2 and GQDs as shown in the inset. The higher density of the charge storage capability for the fabricated device is believed to be enhanced by the presence of GQDs as it is not observed in the previous reported studies 17,27–30 when only MoS 2 flakes are introduced in the device as summarized in Table 1. The large memory hysteresis window at low-voltage further proves that the GQD enhances the charge storage capability because when the size of nanographene shrinks down to a few nm, there is a less significant band-gap induced by the quantum size effect.…”

Section: Resultsmentioning

confidence: 72%

Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer

Ooi

Haniff

Wee

et al. 2019

Sci Rep

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In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 10 7 that might be attributed to the high charge trapped in molybdenum disulphide (MoS 2 ) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS 2 -GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device.

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Electrical reliability, multilevel data storage and mechanical stability of MoS₂-PMMA nanocomposite-based non-volatile memory device

Cited by 44 publications

References 39 publications

Nonvolatile Memories Based on Graphene and Related 2D Materials

Nonvolatile Memories Based on Graphene and Related 2D Materials

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer

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Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device

Cited by 44 publications

References 39 publications

Nonvolatile Memories Based on Graphene and Related 2D Materials

Nonvolatile Memories Based on Graphene and Related 2D Materials

Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer

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Electrical reliability, multilevel data storage and mechanical stability of MoS₂-PMMA nanocomposite-based non-volatile memory device

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles