Electrical Relaxation Studies on Lanthanum and Vanadium Modified Bi4Ti3O12

Prasad, N. V.; Prasad, G.; Kumar, G. S.; Karmakar, Sanjib; Gupta, S. C.

doi:10.1080/00150193.2012.741958

Cited by 7 publications

(12 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, we have reported that A-site substitution, especially lanthanides, or B-site (V C5 ) substitutions, may partially reduce the oxygen vacancies. [8] The results were corroborated with different sintering conditions. Based on this, a tentative conclusion was reached that oxygen vacancies and charge defects cannot be avoided in layered structure compounds.…”

Section: Introductionsupporting

confidence: 75%

“…[7] However, La-and Vmodified BiT showed a kind of diffused phase transition (DPT), which is different from the classical relaxor ferroelectrics where the temperature and frequency independent dielectric response is observed. [8] The interesting property of DPT is attributed to the presence of polar clusters or polar regions; however, many reasons are contributing to the underlying mechanism of DPT. The relaxor materials like lead magnesium niobate (PMN) exhibit polar regions which are timeÀfrequency implicit functions.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, both A-site (Bi) substitution as well as B-site (V C5 ) substitution affect the oxygen vacancy concentrations and certainly overcome the additional space charges. [8,11] In view of this, and to enhance the ferroelectric properties, the Zr C4 was doped in place of Ti C4 in Bi 3.25 La 0.75 Ti 3 O 12 (BLT).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electrical studies on Zr-modified Bi_3.25La_0.75Ti₃O₁₂: a promising FRAM ceramic

et al. 2014

Self Cite

View full text Add to dashboard Cite

Zr-modified Auruvillius family of lanthanum bismuth titanate, namely Bi 3.25 La 0.75 Ti 3¡x Zr x O 12 (BLTZ, x D 0, 0.1, 0.3, 0.5, 0.7 and 1), was prepared by solid-state reaction method. Dielectric properties of the ceramics were studied as a function of temperature. Hysteresis measurements were also performed. Among the composition, Bi 3.25 La 0.75 Ti 2.9 Zr 0.1 O 12 (BLTZ1) showed large remnant polarization compared to the promising ceramic, namely Bi 3.25 La 0.75 Ti 3 O 12 . The results were corroborated with the pyroelectric, electric polarization and Raman spectroscopic data.

show abstract

Section: Introductionsupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical studies on Zr-modified Bi_3.25La_0.75Ti₃O₁₂: a promising FRAM ceramic

et al. 2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…The above two observations clearly indicated that the structural transformation from ferroelectric phase to paraelectric phase is caused by the rearrangement of ions and their complex defects [28]. This intern results into inhomogeneous random potential field for hopping of mobile charges [25,26] and the inhomogeneity is due to the accumulation of defects at grain boundaries. These results are consistent with Fig.…”

Section: La-modified Blsf Ceramics 35mentioning

confidence: 78%

“…Recently, we have reported impedance measurements for PZT, lanthanum and Vanadium modified Bi 4 Ti 3 O 12 ceramics [25,26] and found that the double oxygen vacancies (Vo"), as per the Kroger-Vink notation, can readily compensate with ions and maintain the charge neutrality condition. In the present case, the complex defect dipoles such as Ti 3C -V o " , Ti 4C -V o " , Nb 3C -V o " and Nb C5 -V o " play a vital role in the transport mechanism …”

Section: Resultsmentioning

confidence: 99%

Impedance and Raman Spectroscopic Studies on La-modified BLSF Ceramics

et al. 2015

Self Cite

View full text Add to dashboard Cite

The bismuth layer structured ferroelectric (BLSF) ceramics consisting of four-layers (BaLa 0.75 Bi 3.25 Ti 4 O 15 ) and five-layers (Ba 2 La 0 . 75 Bi 3.25 Ti 5 O 18 ) were prepared by the conventional solid-state reaction method. Summerfield ac-conductivity scaling analysis was used to evaluate the electrical behavior and the ac-conductivity isotherm curves. The relaxation results were corroborated with the Raman Peak positions and full width at half maximum was obtained by using Lorentzian peak fit method. Finally, the results were compared with the two-layered relaxor-compound (Bi 2.45 La 0.55 TiNbO 9 ) and technologically standard three-layered compounds (La 0.75 Bi 3.25 Ti 3 O 12 ; BLT). The dielectric relaxation of Bi 2.45 La 0.55 TiNbO 9 was verified using modified Curie-Weiss law and V€ ogel-Fulcher relationship. An attempt is made to realize the typical collective nature of the ionic conductivity of the samples.

show abstract

Dielectric studies on Sm-modified two-layered BLSF ceramics

et al. 2019

View full text Add to dashboard Cite

Sm x Bi 3−x TiNbO 9 (SBTN) with x = 0, 0.2, 0.4, 0.6, 0.8 and 1.0, a novel type of ceramic was prepared by a conventional solid-state reaction method. X-ray diffraction patterns confirm the formation of a single-phase, and lattice parameters were calculated based on the parent compound Bi 3 TiNbO 9 (BTN). Well-defined grains were seen in the scanning electron microscopy pictures. A kink observed near 400 • C for all the samples in the dielectric plot as well as in the stretched exponential parameter (β) vs. temperature plot reveals the dielectric relaxation of the samples. The tolerance factor (t) was found to increase with increase in the size of the A-site (Bi-site) modified ion (Sm). Impedance and modulus spectroscopic studies were conducted to understand the plausible reason for the dielectric relaxation. The relaxation was found to be well-fit with Arrhenius equation. SBTN samples showed lower dielectric loss compared to BTN. The remnant polarization, obtained from experimental, was found to be less than that of theoretically calculated polarization, using Shimakawa's formula. The proposed defect mechanism was interpreted using FTIR and Raman spectroscopic studies.

show abstract

Electrical Relaxation Studies on Lanthanum and Vanadium Modified Bi₄Ti₃O₁₂

Cited by 7 publications

References 17 publications

Electrical studies on Zr-modified Bi_3.25La_0.75Ti₃O₁₂: a promising FRAM ceramic

Electrical studies on Zr-modified Bi_3.25La_0.75Ti₃O₁₂: a promising FRAM ceramic

Impedance and Raman Spectroscopic Studies on La-modified BLSF Ceramics

Dielectric studies on Sm-modified two-layered BLSF ceramics

Contact Info

Product

Resources

About

Electrical Relaxation Studies on Lanthanum and Vanadium Modified Bi4Ti3O12

Cited by 7 publications

References 17 publications

Electrical studies on Zr-modified Bi3.25La0.75Ti3O12: a promising FRAM ceramic

Electrical studies on Zr-modified Bi3.25La0.75Ti3O12: a promising FRAM ceramic

Impedance and Raman Spectroscopic Studies on La-modified BLSF Ceramics

Dielectric studies on Sm-modified two-layered BLSF ceramics

Contact Info

Product

Resources

About

Electrical Relaxation Studies on Lanthanum and Vanadium Modified Bi₄Ti₃O₁₂

Electrical studies on Zr-modified Bi_3.25La_0.75Ti₃O₁₂: a promising FRAM ceramic

Electrical studies on Zr-modified Bi_3.25La_0.75Ti₃O₁₂: a promising FRAM ceramic