2003
DOI: 10.1016/s0022-3697(03)00062-3
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Electrical properties of α-nickel phthalocyanine/aluminium interfaces: effects of oxygen doping and thermal annealing

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Cited by 32 publications
(24 citation statements)
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“…Effects of temperature and oxygen doping on transport properties of NiPcs have been investigated [18][19][20]. Oxygen doping increases rectification ratio and have large influence on the parameter values of carrier density, barrier height, width of depletion region and the existence of interfacial oxide layer.…”
Section: Introductionmentioning
confidence: 99%
“…Effects of temperature and oxygen doping on transport properties of NiPcs have been investigated [18][19][20]. Oxygen doping increases rectification ratio and have large influence on the parameter values of carrier density, barrier height, width of depletion region and the existence of interfacial oxide layer.…”
Section: Introductionmentioning
confidence: 99%
“…In the reverse bias condition the order of current was much lower than the forward current indicating a current limitation that can be explained as a Schottky or Poole-Frenkel type of conduction. The general equation [20] describing the reverse current density under these circumstances is given by…”
Section: Resultsmentioning
confidence: 99%
“…The order of applied voltages across the film and doping with donor and accepter materials and their concentrations also influence the conduction mechanisms in the organic thin films [17]. The presence of oxygen and several other organic materials as doping agents have already been studied and reported [18][19][20]. Many of the impurities diffuse into the films acting as acceptor impurities and change the conduction mechanisms considerably.…”
Section: Introductionmentioning
confidence: 99%
“…7), indicated that space charge limited conduction (SCLC) mechanism are active together. Trapping levels and interface trap levels, between the layers of heterojunction, are controlled and determined the effectiveness of SCLC mechanism [8,20]. At the slope region II (2 < V F ), m values are 1.63-1.47 for these heterojunctions, meant that the field-lowering mechanisms (the schottky emission or pool-frenkel emission) is active.…”
Section: Electrical Characterizationmentioning
confidence: 99%