2013
DOI: 10.1016/j.ssi.2012.10.020
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Electrical properties of YSZ and CaSZ single crystals

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Cited by 33 publications
(15 citation statements)
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“…Many data sets, especially for compositions that exhibit high oxide ion conductivity, show distinct curvature of the Arrhenius plots which is attributed to the trapping at lower temperatures of mobile oxide ion vacancies in vacancydopant defect complexes. 3,[7][8][9][10] Two possible defect complexes that are widely discussed are the charged dimer, (Y Zr V…”
mentioning
confidence: 99%
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“…Many data sets, especially for compositions that exhibit high oxide ion conductivity, show distinct curvature of the Arrhenius plots which is attributed to the trapping at lower temperatures of mobile oxide ion vacancies in vacancydopant defect complexes. 3,[7][8][9][10] Two possible defect complexes that are widely discussed are the charged dimer, (Y Zr V…”
mentioning
confidence: 99%
“…The Arrhenius plot for σ t , (b), is not linear, consistent with that reported for various YSZ samples on many other occasions. 3,7,8,10,28,29 This non-linearity is widely attributed to trapping of oxygen vacancies in vacancy-dopant complexes at low temperatures: 30 at higher temperatures, dissociation of the complexes occurs and the trapping enthalpy is not included in the activation energy. The total conductivity, σ t , at high temperatures, would therefore represent the hopping of free vacancies.…”
mentioning
confidence: 99%
“…The fitted values of the parameters of the equivalent circuit were used to calculate DRT in the grain interior and grain boundaries of 950°C sintered ceramics. It was supposed that impedance spectrum e ρ ω ð Þ ¼ ρ 0 ω ð Þ−iρ″ ω ð Þ can be represented as a sum of elements with individual relaxation times [25]:…”
Section: Resultsmentioning
confidence: 99%
“…(1) using the regularization methods [25,26]. The charge relaxation occurs with the continuous set of relaxation times with different probabilities so DRT represents the probability The relaxation in grain interior is represented by the peak of distribution of shorter relaxation times followed by a peak of grain boundary relaxations.…”
Section: Resultsmentioning
confidence: 99%
“…The dispersion in electrical properties was assigned to charge carrier relaxation and fitted to an approximately Gaussian distribution of relaxation times (17) . Single crystals of YSZ9 showed dispersions in permittivity, from which tan peaks were extracted and attributed to defect associates involving substitutional Y and oxygen vacancies (18) .…”
Section: Introductionmentioning
confidence: 99%