Electrical properties of thick boron and nitrogen contained CVD diamond films

Polyakov, V. I.; Rukovishnikov, A.I.; Rossukanyi, N.M.; Ralchenko, V. G.

doi:10.1016/s0925-9635(00)00492-1

Cited by 39 publications

(22 citation statements)

References 33 publications

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“…In Q-DLTS, the maximum depth of the detectable trap volume is the width of the depletion layer [19]. From the standard calculation of the depletion layer at the applied bias, we can estimate that the E 11 trap arises from depths up to 60 nm.…”

Section: Discussionmentioning

confidence: 99%

Shallow carrier traps in hydrothermal ZnO crystals

Lem¹,

Phillips²,

Reisdorffer³

et al. 2014

New J. Phys.

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Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy, photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by plasma doping shows two levels at 22 meV and 11 meV below the conduction band. As-grown ZnO displays the expected thermal decay of bound excitons with increasing temperature from 7 K, while we observed an anomalous behaviour of the excitonic emission in H-doped ZnO, in which its intensity increases with increasing temperature in the range 140-300 K. Based on a multitude of optical results, a qualitative model is developed which explains the Y line structural defects, which act as an electron trap with an activation energy of 11 meV, being responsible for the anomalous temperature-dependent cathodoluminescence of H-doped ZnO. 2 1 2 1 . For electrons, the gate timed charge difference is [22, 23]: 2 New J. Phys. 16 (2014) 083040 C Ton-That et al

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Section: Discussionmentioning

confidence: 99%

Shallow carrier traps in hydrothermal ZnO crystals

Lem¹,

Phillips²,

Reisdorffer³

et al. 2014

New J. Phys.

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“…The activation energy ( E a ) and the capture cross section ( σ s ) can be deduced from the Arrhenius dependence of ln( τ

_{italicm}^{−1}

× T −2 ) on T after measuring the Q‐DLTS spectra at different temperatures. More detailed introduction of the principle of Q‐DLTS has been described by Polyakov 11.…”

Section: Methodsmentioning

confidence: 99%

Study on trapping center and trapping effect in MSM ultraviolet photo‐detector on microcrystalline diamond film

Wang¹,

Chen²,

Wu³

et al. 2010

Physica Status Solidi (a)

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A MSM (metal‐semiconductor‐metal) ultraviolet (UV) photo‐detector was fabricated on a high‐quality diamond film deposited by microwave chemical vapor deposition on a Si substrate. Charge‐based deep level transient spectroscopy (Q‐DLTS) was used for obtaining the information on activation energy (Ea), capture cross section (σs) and concentration (Nt) of trapping centers in the band gap of the diamond film. A shallow level with Ea = 0.213 eV, σs = 9.88 × 10−20 cm2 and Nt = 1.1 × 1011 cm−2 is present in the diamond film. The shallow level may not act as effective recombination center due to the so small activation energy according to the Schockly‐Read‐Hall statistics. The UV photo‐detector presents slow time response, high responsivity and high photoconductive gain under irradiation of 220 nm monochromatic light. These performances indicate that minority carrier trapping effect may play an important role in the UV photo‐detector. The photo‐generated minority carriers (electrons in this work) may be trapped by the shallow level during light irradiation process and then de‐trap slowly via thermal excitation or tunnelling effect after removing the light source, which contributes to the prolonged response time. The trapping effect can also reduce the carrier recombination probability, resulting in the high responsivity and high photoconductive gain.

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“…As important and powerful nondestructive characterization techniques, Raman spectroscopy and X-ray diffraction (XRD) have been extensively proposed to analyze crystalline structure, boron concentration, and residual stress in B-doped diamond films [6,8,9]. In previous work, thick (with thicknesses of more than ten or ten's microns) B-doped diamond films (including CVD freestanding polycrystalline films and single crystals) have been widely studied [3,4,[10][11][12][13][14] and applied in a variety of fields, such as electrochemistry electrodes, superconductors, and diamond-based optoelectronic devices. Since the growth process of thick (freestanding) B-doped films generally takes a long time (10 h or hours in tens), the corresponding B-doping and crystalline structure in the films would be strongly dependent on varying reaction ambient and growth features.…”

Section: Introductionmentioning

confidence: 99%

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

Zhang

et al. 2010

Journal of Crystal Growth

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Electrical properties of thick boron and nitrogen contained CVD diamond films

Cited by 39 publications

References 33 publications

Shallow carrier traps in hydrothermal ZnO crystals

Shallow carrier traps in hydrothermal ZnO crystals

Study on trapping center and trapping effect in MSM ultraviolet photo‐detector on microcrystalline diamond film

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

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