2001
DOI: 10.1006/jssc.2001.9120
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Electrical Properties of the Ferrite SrFeOy at High Temperatures

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Cited by 111 publications
(90 citation statements)
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“…27,28,32 P-type (in air) and n-type (reducing conditions) semiconductor behaviour has previously been reported for several related Fe-containing perovskites, including La 1Àx Sr x FeO 3Àd [33][34][35] and LnFeO 3 (Ln = Pr, Nd, Sm, Eu and Gd). 36,37 In these materials the electronic conductivity is strongly linked to polaron hopping and the oxidation state of Fe, which is strongly dependent on the partial pressure of oxygen ( p(O 2 )).…”
Section: +mentioning
confidence: 85%
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“…27,28,32 P-type (in air) and n-type (reducing conditions) semiconductor behaviour has previously been reported for several related Fe-containing perovskites, including La 1Àx Sr x FeO 3Àd [33][34][35] and LnFeO 3 (Ln = Pr, Nd, Sm, Eu and Gd). 36,37 In these materials the electronic conductivity is strongly linked to polaron hopping and the oxidation state of Fe, which is strongly dependent on the partial pressure of oxygen ( p(O 2 )).…”
Section: +mentioning
confidence: 85%
“…[33][34][35][36][37] The electrical conductivity of these materials has previously been modelled with success by a mass action type treatment of point defect equilibria. A mass action type model adapted for 0.8BFO and 0.9BFO is introduced here based on the approach presented by Mizusaki et al 35 for LaFeO 3 .…”
Section: Discussionmentioning
confidence: 99%
“…1), and can be considered as an oxygen-deficient perovskite where the oxygen vacancies are ordered along (0 1 0) planes [11]. These vacancies were assumed to significantly contribute to ionic transport, forming one-dimensional diffusion pathway for oxygen ion migration in the tetrahedral layers [12,13]. On the contrary, experimental data on partially ordered ferrites [6,11,14] suggest that oxygen-vacancy ordering leads to decreasing ionic conduction.…”
Section: Introductionmentioning
confidence: 99%
“…We used pulsed laser epitaxy to grow SCO (x = 2.5 and 3.0) thin films on (001) note that this value is much smaller compared to other bulk BM oxides, such as BaInO 2.5 (2.7 eV) or SrFeO 2.5 (2.0 eV) [16,17]. The small band gap is highly advantageous for many technological applications, e.g., for cathodes in solid oxide fuel cells, as it could realize a mixed ionic and electronic conductor at a moderate temperature.…”
mentioning
confidence: 99%