Electrical Properties of Staggered Electrode, Solution-Processed, Polycrystalline Tetrabenzoporphyrin Field-Effect Transistors

Shea, Patrick B.; Johnson, Aaron R.; Ono, Noboru; Kanicki, Jerzy

doi:10.1109/ted.2005.850616

Cited by 25 publications

(13 citation statements)

References 34 publications

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“…It has been reported that nickel porphyrins have similar band gaps to metal-free porphyrins, 33 which would indicate that the highest occupied molecular orbital ͑HOMO͒ level for NiTBP is around 2.9 eV and the lowest unoccupied molecular orbital ͑LUMO͒ level is around 5.1 eV. 55 Based on the large value of the subthreshold slope, it is likely that NiTBP thin films have a high density of trap states localized within the grain boundaries. This was confirmed by measuring the change in the film conductivity during exposure to broadband illumination.…”

Section: Spun-cast Thin-film Transistorsmentioning

confidence: 98%

Solution-processed nickel tetrabenzoporphyrin thin-film transistors

Shea

Kanicki

Pattison

et al. 2006

Journal of Applied Physics

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We describe nickel tetrabenzoporphyrin ͑NiTBP͒ as a solution-processible organic semiconductor. Whereas porphyrins in an unmodified state are typically planar and insoluble, a precursor synthetic route ͑NiCP͒ was used to deposit thin films via solution. Amorphous, insulating thin films of NiCP were deposited, and thermally converted to polycrystalline, semiconducting NiTBP. Films were studied using optical absorption and microscopy, atomic force microscopy, and x-ray diffraction. Highly concentrated NiCP was shown to form large, needle-shaped crystals drop-cast from solution. NiTBP thin-film field-effect transistors fabricated from spun-cast films demonstrated charge-carrier field-effect mobilities on the order of 0.1 and 0.2 cm 2 / V s and accumulation threshold voltages of −19 and −13, in the linear and saturation regimes, respectively.

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Section: Spun-cast Thin-film Transistorsmentioning

confidence: 98%

Solution-processed nickel tetrabenzoporphyrin thin-film transistors

Shea

Kanicki

Pattison

et al. 2006

Journal of Applied Physics

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“…7,9−11,13,16−21 By combining characteristic features of the frameworks of these two tetrapyrroles, one obtains the extremely interesting class of "tetrabenzoporphyrins" (TBPs). 22 Although benzoporphyrins have already been widely used in photodynamic therapy 12,23 and technological applications like active-matrix organic light-emitting diodes (AM-OLEDs) 24,25 or transistors, 26 only very few reports about their adsorption behavior on metal surfaces exist. 27,28 In 2013, Heinrich et al reported Fe-TBP as the final product of a concentric electrocyclic ring closure and investigated the accompanied change in magnetic fingerprint.…”

Section: ■ Introductionmentioning

confidence: 99%

Role of Specific Intermolecular Interactions for the Arrangement of Ni(II)-5, 10, 15, 20-Tetraphenyltetrabenzoporphyrin on Cu(111)

et al. 2015

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We have studied the coverage-dependent adsorption behavior of Ni(II)-5,10,15,20-tetraphenyltetrabenzoporphyrin on Cu(111) by scanning tunneling microscopy (STM) at room temperature. At medium coverages, the molecules self-assemble into two-dimensional islands, due to mutual stabilization through intermolecular interactions. Altogether, three different supramolecular arrangements coexist at low-to-medium coverages. On the basis of highresolution STM images and density functional theory calculations, models for the three arrangements and the corresponding intramolecular conformations of the individual molecules are proposed. The observed polymorphism is attributed to a complex interplay of specific T-type and π−π stacking interactions between the phenyl groups. For Ni(II)-meso-tetrakis (4-tert-butylphenyl) benzoporphyrin, in which the aromatic periphery is modified by the attachment of tert-butyl groups, only one supramolecular arrangement on Cu(111) is found. This difference highlights the fact that the choice of peripheral ligands of the porphyrin derivatives plays an important role in the fabrication and tailoring of functional molecular architectures. Figure 5. (a) STM image of Ni-TTBPBP on Cu(111) (U bias = +1.30 V, I set = 28 pA). The superimposed models indicate a square ordering of the supramolecular arrangement and a close packing of the tert-butyl groups. (b) Schematic of Ni-TTBPBP.

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“…[2][3][4][5][6] The synthetic process used to create the precursor molecules can be altered to create variations of the TBP molecule that exhibit widely different thin-film morphology and electrical performance; H 2 , Cu, Ni, and Zn core substitutions (TBP, CuTBP, NiTBP, and ZnTBP, respectively) in particular have demonstrated organic field-effect transistors (OFETs) with mobilities (µ FE ) in the range of 0.01-1 cm 2 /V-s. 5,[7][8][9] TBP has also recently been demonstrated as a robust donor material in organic photovoltaics (OPVs). 10,11 The bulk of theoretical examinations on the electronic structures of porphyrins have focused on single molecules, typically deriving their interpretation from the Gouterman four-orbital model.…”

Section: Introductionmentioning

confidence: 99%

Ab initio electronic structure calculations of solid, solution-processed metallotetrabenzoporphyrins

Shea

Kanicki

2012

Journal of Applied Physics

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An ab initio study of the electronic structures of solid metallotetrabenzoporphyrins (MTBPs) utilized in organic transistors and photovoltaics is presented. Bandstructures, densities of states, and orbitals are calculated for H 2 , Cu, Ni, and Zn core substitutions of the unit cell of solid TBP, as deposited via soluble precursors that are thermally annealed to produce polycrystalline, semiconducting thin-films. While the unit cells of the studied MTBPs are nearly isomorphous, substitution of the core atoms alters the structure of the bands around the energy bandgap and the composition of the densities of states. Cu and Ni core substitutions introduce nearly-dispersionless energy bands near the valence and conduction band edges, respectively, that form acceptor or deep generation/recombination states. The following article appeared in J. Appl. Phys. 111, 073709 (2012).

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Electrical Properties of Staggered Electrode, Solution-Processed, Polycrystalline Tetrabenzoporphyrin Field-Effect Transistors

Cited by 25 publications

References 34 publications

Solution-processed nickel tetrabenzoporphyrin thin-film transistors

Solution-processed nickel tetrabenzoporphyrin thin-film transistors

Role of Specific Intermolecular Interactions for the Arrangement of Ni(II)-5, 10, 15, 20-Tetraphenyltetrabenzoporphyrin on Cu(111)

Ab initio electronic structure calculations of solid, solution-processed metallotetrabenzoporphyrins

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