Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications

Taylor, Deborah J.; Jones, Robert E.; Zürcher, P.; Chu, Peir; Lii, Y. T.; Jiang, Bo; Gillespie, S.J.

doi:10.1063/1.116170

Cited by 72 publications

(44 citation statements)

References 1 publication

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“…In the left side of the parallel image is an inset model of the perovskite/silicon projection. layered compounds with examples in superconductivity [16][17][18], giant magnetoresistance [19][20][21], and ferroelectricity [22,23], there has been very little clarity regarding the energetics of heteropitaxial stability at a semiconductor/oxide interface.…”

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confidence: 99%

Crystalline Oxides on Silicon: The First Five Monolayers

1998

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The long-standing problem of growing a commensurate crystalline oxide interface with silicon has been solved. Alkaline earth and perovskite oxides can be grown in perfect registry on the (001) face of silicon, totally avoiding the amorphous silica phase that ordinarily forms when silicon is exposed to an oxygen containing environment. The physics of the heteroepitaxy lies in establishing a sequenced transition that uniquely addresses the thermodynamics of a layer-by-layer energy minimization at the interface. A metal-oxide-semiconductor capacitor using SrTiO 3 as an alternative to SiO 2 yields the extraordinary result of t eq , 10 Å. [S0031-9007(98)07238-X] PACS numbers: 81.15. Hi, 73.40.Qv, 77.55. + f Since the advent of the integrated circuit in 1959 and the introduction of metal-oxide-semiconductor (MOS) capacitors in the early 1960s, electronic technology has relied on silica ͑SiO 2 ͒ as the gate dielectric in a field effect transistor. However, silica-based transistor technology is approaching fundamental limits. Feature-size reduction and the ever-demanding technology roadmaps have imposed scaling constraints on gate oxide thickness to the point where excessive tunneling currents make transistor design untenable; an alternative gate dielectric is needed [1].While now it is especially clear, with SiO 2 thicknesses in the sub-50-Å regime, the argument for alternative gate oxides is not new; it has been made from different perspectives for over 40 years [2][3][4][5]. Quite aside from the "physical" thickness limits that tunneling currents make obvious, the amorphous SiO 2 interface with silicon leaves dangling bonds as electronic defects disrupting translational symmetry at the interface. An alternative crystalline gate oxide would, in principle at least, uniquely maintain a one-to-one correspondence between physical and electrical structure preserving translational symmetry to atomic dimensions.Crystalline oxides on silicon (COS), simply by virtue of their high dielectric constants, could fundamentally change the scaling laws for silicon-based transistor technology. More importantly COS introduces the possibility for an entirely new device physics based on utilization of the anisotropic response of crystalline oxides grown commensurately on a semiconductor. In this Letter, we report that high dielectric constant alkaline earth and perovskite oxides can be grown in perfect registry with silicon. Commensurate heteroepitaxy between the semiconductor and the oxide is established via a sequenced transition that uniquely addresses the thermodynamics of a layer-by-layer energy minimization at the interface. The perfection of the physical structure couples directly to the electrical structure, and we thus obtain the unparalleled result of an equivalent oxide thickness of less than 10 Å in a MOS capacitor.An equivalent oxide thickness t eq can be defined for a MOS capacitor asin which´S iO 2 and´0 are the dielectric constants of silica and the permittivity of free space. ͑C͞A͒ ox is the specific capacitance of the...

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confidence: 99%

Crystalline Oxides on Silicon: The First Five Monolayers

1998

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“…Commonly, with increasing temperature, the cation P S displacement should be reduced and polarization values decrease continuously. 43 Here, the temperatureindependent polarization property of the 0.2BMT-0.8PT thin films should be due to the fact of high T C (about 550 C). 9,13 The investigated temperature (125 C) in the present study is sufficiently lower than its T C , and the P S should slightly decrease in the investigated temperature range from RT to 125 C. It is well known that polarization of ferroelectric is ascribed to not only the intrinsic polarization from cation displacement but also the extrinsic contribution from domain wall motion.…”

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confidence: 99%

Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films

Zhang

Chen

Zhao

et al. 2013

Applied Physics Letters

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Ferroelectric property stability against elevated temperature is significant for ferroelectric film applications, such as non-volatile ferroelectric random access memories. The high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films show the temperature-independent ferroelectric properties, which were fabricated on Pt(111)/Ti/SiO2/Si substrates via sol-gel method. The present thin films were well crystallized in a phase-pure perovskite structure with a high (100) orientation and uniform texture. A remanent polarization (2Pr) of 77 μC cm−2 and a local effective piezoelectric coefficient d33* of 60 pm/V were observed in the 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films. It is interesting to observe a behavior of temperature-independent ferroelectric property in the temperature range of room temperature to 125 °C. The remanent polarization, coercive field, and polarization at the maximum field are almost constant in the investigated temperature range. Furthermore, the dielectric loss and fatigue properties of 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films have been effectively improved by the Mn-doping.

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“…Such as Pb(Zr,Ti)O 3 (PZT), Sr 2 Bi 2 Ta 2 O 9 (SBT), SrTiO 3 (ST), Ba(Zr,Ti)O 3 (BZ1T9), and (Ba,Sr)TiO 3 (BST) were widely studied and discussed for large storage capacity FeRAM devices. The (Ba,Sr)TiO 3 and Ba(Ti,Zr)O 3 ferroelectric materials were also expected to substitute the PZT or SBT memory materials and improve the environmental pollution because of their low pollution problem [9][10][11][12][13][14][15]. In addition, the high dielectric constant and low leakage current density of zirconium and strontium-doped BaTiO 3 thin films were applied for the further application in the high density dynamic random access memory (DRAM) [16][17][18][19][20].…”

Section: Abo 3 and Blsf S Structure Materialsmentioning

confidence: 99%

Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

Cheng¹,

Chen²,

Lin³

et al. 2011

Ferroelectrics - Applications

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Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications

Abstract: Structural and ferroelectric properties of the caxis oriented SrBi2Ta2O9 thin films deposited by the radio frequency magnetron sputtering

Cited by 72 publications

References 1 publication

Crystalline Oxides on Silicon: The First Five Monolayers

Crystalline Oxides on Silicon: The First Five Monolayers

Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films

Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

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