Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field-effect transistors

Borgne, Brice Le; Salaün, Anne‐Claire; Pichon, Laurent

doi:10.1016/j.mee.2015.11.001

Cited by 13 publications

(6 citation statements)

References 34 publications

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“…In recent years, silicon nanowires (SiNWs) have aroused tremendous attention worldwide thanks to the following outstanding features: (1) Environment-friendly as second most earth-abundant materials; (2) unique dimensional structures (1 D); (3) interesting electrical and optical properties compared to bare silicon; (4) affordable fabrication; and (5) potential applications in several fields [1][2][3][4][5]. The various applications of these nanostructures may include lithium-ion batteries [6], biochemical sensors [7,8], electronics [9], catalysis [10], and solar cells [1,11].…”

Section: Introductionmentioning

confidence: 99%

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

et al. 2020

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In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etching time on morphological, structural, optical, and electrical properties of SiNWs was analysed. The NWs length increased with increasing etching time, whereas the wires filling ratio decreased. The broadband photoluminescence (PL) emission was originated from self-generated silicon nanocrystallites (SiNCs) and their size were derived through an analytical model. FTIR spectroscopy confirms that the PL deterioration for extended time is owing to the restriction of excitation volume and therefore reduction of effective light-emitting crystallites. These SiNWs are very effective in reducing the reflectance to 9-15% in comparison with Si wafer. I-V characteristics revealed that the rectifying behaviour and the diode parameters calculated from conventional thermionic emission and Cheung's model depend on the geometry of SiNWs. We deduce that judicious control of etching time or otherwise SiNWs' length is the key to ensure better optical and electrical properties of SiNWs. Our findings demonstrate that shorter SiNWs are much more optically and electrically active which is auspicious for the use in optoelectronic devices and solar cells applications.Nanomaterials 2020, 10, 404 2 of 18 time-consuming and therefore hindered their applications for commercialized products. In contrast, an effective and promising synthetic method namely metal assisted chemical etching (MACE) has been proposed [2,4,[18][19][20]. This technique is simple, rapid, low cost, and suitable for both industrial and laboratory scales. Moreover, MACE allows to obtain high crystalline SiNWs quality, as well as an easy control of the different parameters including orientation, doping type, length, and diameter.The MACE method basically consists of two procedures, the formation of metal catalysts and the subsequent etching process which can be implemented either in a single step (1-MACE) [10,21] or in two steps (2-MACE) [17-20]. Moreover, the formation method, etching time, etching temperature, metal deposition time, and lastly the etchants' concentrations have a crucial influence on the morphology of SiNWs [2,5,17]. Ghosh et al. reported that SiNWs grown by MACE are usually covered with silicon nanocrystals due to the side wall etching and which are the origin of quantum confinement (QC) effects owing to their small dimensions [20]. Recently, several research groups have succeeded in the synthesis of optically-active SiNWs exhibiting a significant PL emission and a very low reflectance [3,4,17]. On the other hand, Qi et al. have demonstrated the fabrication of electrically-active SiNWs through heavily doped SiNWs with rough surface where a high Schottky barrier exists at the interface of SiNWs and the metal [22]. Nevertheless, further investigation is required t...

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Section: Introductionmentioning

confidence: 99%

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

et al. 2020

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“…Over the past few years, silicon nanowires (SiNWs) have aroused colossal attention worldwide both at the academic and technological level owing to the following fascinating peculiarities: (1) silicon is the second most earth-abundant material after oxygen, non-toxic, and environmentally friendly; (2) SiNWs have a distinct one-dimensional “1D” structure; (3) they have unique optical and electrical properties compared to bare silicon; (4) they have potential applications in several fields, ranging from solar cells, catalysis, and electronics to sensors [ 1 , 2 , 3 , 4 , 5 ]; and (5) they have affordable fabrication via numerous methods, including chemical vapor deposition (CVD), lithography, molecular beam epitaxy, laser ablation, and metal-assisted chemical etching (MACE) [ 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. Among these methods, MACE is particularly intriguing and promising because of its simplicity, good cost-efficiency, and reliability [ 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

et al. 2020

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A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.

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“…This a‐Si layer is then patterned by RIE using a SF 6 plasma to both create the nanospacers (non‐intentionally doped part used as SiNWs), and the source–drain electrodes (non‐intentionally doped and highly doped region) of the transistor. The feasibility of such SiNWs based transistors was previously demonstrated . Our devices are consequently made of 100 parallel SiNWs whose height and width are about 100 nm.…”

Section: Methodsmentioning

confidence: 95%

“…Indeed, low temperature deposited polycrystalline silicon layers are low cost and present many applications. In particular, our group demonstrated the fabrication of poly‐SiNWs based devices for electronics and biochemical sensors applications . However, as their electrical performances remains very low, new techniques must be fully studied, to both improve the electrical properties of the nanowires, and the performance of the corresponding devices (electronics, sensitivity).…”

Section: Introductionmentioning

confidence: 99%

Reduced bulk and surface states densities in metal‐induced crystallized polycrystalline silicon nanowires

Borgne

Pichon

Thomas

et al. 2016

Physica Status Solidi (a)

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International audiencePolycrystalline silicon nanowires are fabricated following sidewall spacer approach using conventional UV lithography technique. Unfortunately, solid phase crystallization of nanowires implies low electrical properties due to the poor nanowires crystal quality. As polycrystalline silicon nanowires based field effect transistors find a lot of applications, improving nanowires crystalline quality is a technological challenge. One solution studied here is metal induced lateral crystallization method, using nickel as catalyst to create oriented crystals. The comparison is done between these two crystallization techniques. Indeed, we deeply investigate silicon nanowires/insulator interface and nanowires qualities by the determination of the energy distributions of the densities of states and the surface states using the Suzuki's incremental method. This calculation confirms that metal induced lateral crystallization significantly reduces bulk and surface states densities, compared to solid phase crystallized nanowires. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

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Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field-effect transistors

Cited by 13 publications

References 34 publications

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

Reduced bulk and surface states densities in metal‐induced crystallized polycrystalline silicon nanowires

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