Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga<sub>2</sub>O<sub>3</sub>substrates with crystal defects

Oshima, Takayoshi; Hashiguchi, Akihiro; Moribayashi, Tomoya; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu; Oishi, Toshiyuki; Kasu, Makoto

doi:10.7567/jjap.56.086501

Cited by 81 publications

(52 citation statements)

References 32 publications

(54 reference statements)

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“…Most previously reported diode rectifiers have had areas of less than 10 −3 cm 2 and this effect will not be obvious in that situation [7], [17]- [19]. Oshima et al [37] found a spatial correlation between dicing-induced defects and large reverse leakage currents in diodes fabricated in those areas on (001) oriented substrates. Kasu et al [36] reported densities of etch pits above 10 4 cm −2 whose presence did not directly correlate with increased reverse leakage current in similar diodes on (001) oriented substrates.…”

Section: Resultsmentioning

confidence: 99%

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Yang

Ren

Pearton

et al. 2018

IEEE Trans. Electron Devices

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Large area (up to 0.2 cm 2) Ga 2 O 3 rectifiers without edge termination were fabricated on a Si-doped n-Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n + Ga 2 O 3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga 2 O 3 rectifiers. The on-state resistance was 0.26 • cm 2 for these largest diodes, decreasing to 5.9 × 10-4 • cm 2 for 40 × 40 μm 2 devices. The temperature dependence (25°C-125°C) of forward current density was used to extract the barrier height of 1.08 eV for Ni and a Richardson's constant of 48 A • cm −2 • K-2. Ideality factors were in the range 1.01-1.05, with the barrier height decreasing with temperature. The reverse breakdown was a strong function of diode area, decreasing from 466 V (1.6 × 10 −5 cm 2) to 15 V for 0.2 cm 2. This led to power figureof-merits (V 2 B /R ON) in the range 3.68 × 10 8-865 W • cm −2 over this area range. The reverse breakdown voltage scaled approximately as the contact perimeter, indicating it was dominated by the surface and decreased with temperature with a negative temperature coefficient of 0.45 V • K −1. The reverse recovery time when switching from +1 V to reverse bias was 34 ns.

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Section: Resultsmentioning

confidence: 99%

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Yang

Ren

Pearton

et al. 2018

IEEE Trans. Electron Devices

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“…Several authors are conducting early-stage research on β-Ga 2 O 3 -based Schottky barrier diodes (SBDs). A few studies on β-Ga 2 O 3 SBDs fabricated on β-Ga 2 O 3 single crystal grown by different growth methods with various crystal orientations have been reported in the literature [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. Most of these studies investigated the electrical characteristics in forward bias conditions where the thermionic emission (TE) mechanism is predominant.…”

Section: Introductionmentioning

confidence: 99%

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Latreche

2019

SN Appl. Sci.

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A new analysis method of reverse leakage current for β-Ga 2 O 3 Schottky barrier diodes is performed by using two models: bias dependence and no bias dependence of barrier height. The method incorporates both the current induced by the tunneling of carriers through the Schottky barrier and the current induced by the thermionic emission of carriers across the metal-semiconductor interface. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components that were separated from the total current. Below the reverse transition voltage, the thermionic emission current dominates, and above it, the tunneling current dominates, while near the reverse transition voltage, neither tunneling nor thermionic emission accurately describes the conduction process because the both currents have the same order of magnitude; therefore, the both mechanisms must be combined together. The experimental reverse transition voltage (bias-dependent model) increases for low and high temperatures and decreases at intermediate temperatures for β-Ga 2 O 3 Schottky barrier diodes. The bias dependence of the barrier height model shows that the barrier height is strongly dependent (increases) on the reverse bias, in particular at low temperatures and low reverse bias. This model can explain the discrepancy between the experimental characteristics and those calculated by no bias dependence of barrier height model.

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“…Our case of 8 μm with doping 4.4 × 10 15 cm −3 has a theoretical breakdown more than an order of magnitude larger than the experimental value. 43,44…”

Section: Resultsmentioning

confidence: 99%

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

Yang

Fares

Elhassani

et al. 2019

ECS J. Solid State Sci. Technol.

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There is interest in developing large area Ga 2 O 3 rectifiers for applications in hybrid power converters. Vertical geometry, Schottky rectifiers with area 1.2 × 1.2 mm 2 fabricated on thick (8μm), undoped (n = 4.4 × 10 15 cm −3) β-Ga 2 O 3 epitaxial layers oN conducting bulk substrates exhibit both high forward current (1A in pulsed mode) and reverse breakdown voltage (V B = 760V). This breakdown voltage was ∼200V higher than rectifiers without the presence of a bilayer SiO 2 / SiN x field plate. This edge termination is critical for obtaining high breakdown voltage by reducing electric field crowding around the metal contact periphery. Optimization of the field plate design is still needed, since devices are observed experimentally to breakdown at the contact periphery. When purposely driven to failure at high reverse bias, pits are observed in the high field regions at the edge of the contact. The specific on-resistance (R on) for these large area rectifiers was 22 m .cm −2 , with a figure-of-merit V B 2 /Ron of 26 MW.cm −2. The potential of Ga 2 O 3 for power electronics is clear when it is realized that these values are still an order of magnitude lower than theoretical values. The diode on-off ratio was in the range 2.7 × 10 7-2.2 × 10 9 when switching from +1.5V forward bias to 1-100V reverse bias.

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Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga₂O₃substrates with crystal defects

Cited by 81 publications

References 32 publications

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

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Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3substrates with crystal defects

Cited by 81 publications

References 32 publications

Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates

Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers

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Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga₂O₃substrates with crystal defects

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers