Electrical Properties of Polymers

“…The breakdown mechanism may be explained by thermal breakdown as considering the temperature dependency of breakdown strength and the time to breakdown (about 1sec.) together [14]. The decreasing rates of the breakdown strength with temperature above 100℃ are also depended on the glass transition temperature of samples as shown Fig.…”

Section: Thermal Properties Measurementmentioning

confidence: 75%

Analysis of AC Breakdown Characteristics of Fly Ash Cenosphere/Epoxy Composite

Seo¹,

Kwon²,

Cha³

et al. 2016

Journal of Electrical Engineering and Technology

View full text Add to dashboard Cite

-In this study, AC breakdown properties of cenosphere/epoxy composite are investigated.The thermal properties of the composite are also discussed. The cenosphere/epoxy composites were prepared by epoxy resin filled with 0~40 wt% of hollow fly ash particles (cenospheres). The AC breakdown strength of the composites was measured at 25~125℃. The permittivity, glass transition temperature, and coefficient of thermal linear expansion of the composites were also measured. The experimental results of the cenosphere/epoxy composite were compared with those of the silica/epoxy composite which are widely used as insulating materials in power apparatus. The cenosphere/epoxy composite showed the similar or better performance than silica/epoxy composite in terms of breakdown strength, glass transition temperature, and coefficient of thermal expansion.

show abstract

“…The ideality factor for an ideal Schottky barrier diode is one. The ideality factor being more than one in this case indicates the presence of recombination effects at the depletion layer (Seanor, 1992). The rectification ratio of the device is small compared to devices made of other polythiophene derivatives such as PTOPT (Bantikassegn Workalkemahu and Inganas, 1997).…”

Section: Current-voltage Measurementsmentioning

confidence: 87%

Electronic properties of poly[3-(2”,5”-diheptyloxyphenyl)-2,2'-bithiophene]/Al junctions

Abdalla

Mammo

Workalemahu

2004

SEJS

View full text Add to dashboard Cite

ABSTRACT:Junctions between a single layer of Poly[3-(2",5"-diheptyloxyphenyl)-2,2'-bithiophene] and aluminium are studied by means of current-voltage and capacitance-voltage characteristics, and complex impedance spectroscopy. The results indicate the formation of a Schottky barrier type at Poly[3-(2",5"-diheptyloxyphenyl)-2,2'-bithiophene]/Al interface. Parameters such as the reverse saturation current, the barrier height and the ideality factor are extracted from the I-V curves. The ColeCole plots of complex impedance spectroscopy reveal part of a single semicircle, which can be modeled as a single parallel RC circuit. This suggests that the device is a metal-semiconductor (M-S) type. Capacitance per unit area as well as the width of the depletion layer are obtained from the complex impedance analysis. The built-in potential and the charge carrier concentration are also calculated from C-V curves.

show abstract

Electrical Properties of Polymers

Cited by 47 publications

References 113 publications

PANI-derived polymer/Al2O3 nanocomposites: synthesis, characterization, and electrochemical studies

PANI-derived polymer/Al2O3 nanocomposites: synthesis, characterization, and electrochemical studies

Analysis of AC Breakdown Characteristics of Fly Ash Cenosphere/Epoxy Composite

Electronic properties of poly[3-(2”,5”-diheptyloxyphenyl)-2,2'-bithiophene]/Al junctions

Contact Info

Product

Resources

About