Electrical properties of PbTe single crystals with excess tellurium

Bagiyeva, G. Z.; Mustafayev, N. B.; Abdinova, G. D.; Abdinov, D. Sh.

doi:10.1134/s1063782611110029

Cited by 10 publications

(5 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is in contrast to the case of PbTe, PbSe and SnTe, which shows that the mobility of dense, polycrystalline samples can be quite similar to single crystals. 27,95,[126][127][128][129] In addition to the very different carrier mobility, thermal conductivity is another issue because of which the zT of SnSe crystals could not transfer to SnSe polycrystals. There is a spread of thermal conductivity values (even though all deal with polycrystalline SnSe samples) with some groups, 130,131 reporting an extremely low thermal conductivity similar to or lower than SnSe single crystals while others report higher values.…”

Section: Snse/s and Their Solid Solutionsmentioning

confidence: 99%

Lead-free tin chalcogenide thermoelectric materials

Zhou

Snyder

et al. 2016

Inorg. Chem. Front.

View full text Add to dashboard Cite

show abstract

Section: Snse/s and Their Solid Solutionsmentioning

confidence: 99%

Lead-free tin chalcogenide thermoelectric materials

Zhou

Snyder

et al. 2016

Inorg. Chem. Front.

View full text Add to dashboard Cite

show abstract

“…Synthesized composition had excess tellurium relative to stoichiometry, in accordance with the data of energy dispersive x-ray analysis, of 4 at.%. Samples had p-type conductivity, and the Hall effect measurements showed that the hole concentration is p = 8 × 10 18 cm −3 at 300 K. A detailed description of the electrical properties of the crystals is given in [15,16]. The grown crystals with 12 mm diameter were cut perpendicular to the growth axis in order to obtain crystalline disks with the thickness of 3-5 mm, whose surface was polished with diamond paste and finished with a chemical polishing.…”

Section: Methodsmentioning

confidence: 99%

Application of abnormally high sputtering rate of PbTe(Te) single crystals during inductively coupled argon plasma treatment for fabrication of nanostructures

Zimin

Горлачев

Amirov

et al. 2015

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper reports the investigations of the sputtering process of (111) oriented single crystals of PbTe with excess tellurium (4 at.%) in RF high-density low-pressure inductively coupled argon plasma. An increase of 1.6 times the sputtering rate of lead telluride in comparison with the classical case of single-crystal state with a slight deviation from stoichiometry is shown and the explanation of the results is carried out based on the analysis of the crystal point defects. The active sputtering is used in a new approach to form lead telluride nanostructures on oxidized Si substrates via the vapour-liquid-solid (VLS) redeposition mechanism, and the fabrication of PbTe nanocones, nanocubes and nanowires with various geometrical parameters is demonstrated.

show abstract

“…PbTe single-crystal ingots were grown in (111) direction using Bridgman method according to a wellestablished technique [1]. Synthesized composition had excess tellurium relative to stoichiometry of 4 at.%.…”

Section: Methodsmentioning

confidence: 99%

Self-formation of lead telluride nanostructures during argon plasma etching of single-crystal wafers

Dubov

Zimin

Горлачев

et al. 2014

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Application of abnormally high sputtering rate of PbTe(Te) single crystals during inductively coupled argon plasma treatment for fabrication of nanostructures S P Zimin, E S Gorlachev, I I Amirov et al.Plasma sputtering of polycrystalline Pb1xSnxTe thin films grown on glass substrates using hot wall deposition S P Zimin, E S Gorlachev, V F Gremenok et al. Abstract. In this work we report a phenomenon of PbTe nano-and microstructure selfformation that takes place during dry etching of lead telluride (111)-oriented single-crystal wafers with 4 at.% excess tellurium in RF high-density low-pressure inductively coupled argon plasma. Using scanning electron microscopy and energy dispersive X-ray spectroscopy investigations it is established that during the plasma treatment high sputtering rates are accompanied by active redeposition processes on crystal surface and on the inner side of the Si etching mask resulting in a nanostructure arrays self-formation via vapour-liquid-solid mechanism. ExperimentalPbTe single-crystal ingots were grown in (111) direction using Bridgman method according to a wellestablished technique [1]. Synthesized composition had excess tellurium relative to stoichiometry of 4 at.%. The grown crystals were cut perpendicular to the growth axis in order to obtain disk wafers with the thickness of 3-5 mm, whose surface was polished with diamond paste with chemical polishing finish. Plasma sputtering (dry etching) of the surface of PbTe(Te) disks was performed using a radiofrequency high-density low-pressure inductively coupled plasma (RF ICP) treatment [2][3][4]. Power applied to the inductor of the plasma reactor was 800 W, RF bias power at the substrate was varied in the range of 100-300 W, self-bias negative potential was 85-195 V, argon flow rate was 10 sccm. Series of consecutive surface treatments were carried out with a change in the duration (10-60 s) and bias power. During treatment stencil Si masks with native oxide and 0.6 μm thick SiO2 layer were used, with a typical microgap between the sample and Si surfaces being 1-10 μm. The morphology was studied with scanning electron microscopy (SEM) using Supra 40 Carl Zeiss microscope and local elemental composition was determined from energy dispersive X-ray (EDX) data using INCAx-act Oxford Instruments spectrometer. Results and discussions

show abstract

Electrical properties of PbTe single crystals with excess tellurium

Cited by 10 publications

References 4 publications

Lead-free tin chalcogenide thermoelectric materials

Lead-free tin chalcogenide thermoelectric materials

Application of abnormally high sputtering rate of PbTe(Te) single crystals during inductively coupled argon plasma treatment for fabrication of nanostructures

Self-formation of lead telluride nanostructures during argon plasma etching of single-crystal wafers

Contact Info

Product

Resources

About