Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Qamar, Afzaal; Tanner, Philip; Dao, Dzung Viet; Phan, Hoang‐Phuong; Dinh, Toan

doi:10.1109/led.2014.2361359

Cited by 31 publications

(21 citation statements)

References 13 publications

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“…SiC has various polytypes 2H-SiC, 4H-SiC, 6H-SiC and 3C-SiC, however, only the 4H-SiC, 6H-SiC, and 3C-SiC are reliable semiconductors in the industry [6]. A number of studies has been focused on 3C-SiC for stress sensing applications [11][12][13][14][15][16]. 3C-SiC polytype has more advantage over other polytypes because it can be readily grown on commercially available large diameter Si substrates.…”

Section: Introductionmentioning

confidence: 99%

A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications

et al. 2018

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The pseudo-Hall effect in n-type single crystal 3C-SiC(1 0 0) with low carrier concentration has been investigated. Low pressure chemical vapor deposition was used to grow the single crystal n-type 3C-SiC(1 0 0) and Hall devices were fabricated by photolithography and dry etch processes. A large pseudo-Hall effect was observed in the grown thin films which showed a strong dependence on the crystallographic orientation. N-type 3C-SiC(1 0 0) with low carrier concentration shows a completely different behavior of pseudo-Hall measurements as compared to the p-type 3C-SiC(1 0 0). Contrary to p-type, the effect is maximum along [1 0 0] crystallographic orientation and minimum along [1 1 0] orientation. Moreover, the observed pseudo-Hall effect is 50% larger than p-type with higher carrier concentration grown by the same process which makes n-type 3C-SiC(1 0 0) with low carrier concentration more suitable material for designing highly sensitive micro-mechanical sensors.

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Section: Introductionmentioning

confidence: 99%

A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications

et al. 2018

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“…In addition, Silicon carbide (SiC) is one of the most promising wide bandgap materials due to its excellent chemical stability, as well as its mechanical and electrical properties [7]- [9]. Among 200 polytypes of SiC, only 3C-SiC can be grown epitaxially on a large Si-wafer at around 1000 C. As a result, the cost of the wafer reduces significantly [10]. Hence, the 3C-SiC on Si structure has been used for a number of N/MEMS applications, for instance, temperature sensors [11]- [12], piezoresistive sensors [13]- [15], and pressure sensors [16]- [17].…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction

Foisal

Dinh

Tanner

et al. 2018

Sustainable Design and Manufacturing 2018

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This paper demonstrates the prospect of using a 3C-SiC/Si heterostructure as an ultraviolet and visible photodetector. The heterojunction has been grown epitaxially on Si-substrate via a Low Pressure Chemical Vapor Deposition technique at 1000 C. The detector shows a good diode characteristic with a rectification ratio of 1.03×10 3 and a reverse leakage current of 7.2×10 -6 A at 2V in dark conditions. The responsivity of the device is found to be 5.4×10 -2 A/W and 3.18×10 -2 A/W at a reverse bias of 2V under visible (635 nm) and UV (375 nm) illumination, respectively. An energy band diagram is proposed to explain the photosensitivity of the heterostructure.

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“…The different physical properties between SiC and Si such as thermal expansion, crystal lattice sizes, and different band gaps result in numerous interesting phenomena including large residual stress and the SiC/Si heterojunction. [12][13][14] In addition, the SiC on Si platform also enables the fabrication of SiC micro structures, where the bottom Si layer can be removed with a relatively high etching rate of more than 10 mm min À1 in comparison to the low etching rate of bulk SiC wafer, which is typically several hundred nm min À1 . [15,16] Numerous free-standing SiC microstructures such as cantilevers, doubly clamped bridges, or micro-discs have been realized, where SiC films are initially patterned followed by a standard Si etching process to remove the substrate.…”

Section: Introductionmentioning

confidence: 99%

Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications

et al. 2017

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This work presents fabrication of micro structures on sub-100 nm SiC membranes with a large aspect ratio up to 1:3200. Unlike conventional processes, this approach starts with Si wet etching to form suspended SiC membranes, followed by micro-machined processes to pattern free-standing microstructures such as cantilevers and micro bridges. This technique eliminates the sticking or the under-etching effects on free-standing structures, enhancing mechanical performance which is favorable for MEMS applications. In addition, post-Si-etching photography also enables the formation of metal electrodes on free standing SiC membranes to develop electrically-measurable devices. To proof this concept, the authors demonstrate a SiC pressure sensor by applying lithography and plasma etching on released ultrathin SiC films. The sensors exhibit excellent linear response to the applied pressure, as well as good repeatability. The proposed method opens a pathway for the development of self-sensing free-standing SiC sensors.

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Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Cited by 31 publications

References 13 publications

A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications

A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications

Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction

Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications

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