Electrical Properties of <i>n</i>-Type Silicon Doped with Gold

Bullis, W Murray; Strieter, Frederick J.

doi:10.1063/1.1655751

Cited by 36 publications

(7 citation statements)

References 12 publications

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“…With such deep dopant levels, only small amounts of Au dopant atoms are expected to be ionized. It is known that carrier concentration in bulk Si with Au as its dopant will peak near ∼10 12 carriers/cm 3 , even though the Au atom concentration is significantly higher . One possible reason for having high carrier concentrations in our SiNW devices is that the SiNWs surface states might be supporting a large amount charge carriers.…”

Section: Resultsmentioning

confidence: 99%

“…It is known that carrier concentration in bulk Si with Au as its dopant will peak near ∼10 12 carriers/ cm 3 , even though the Au atom concentration is significantly higher. 21 One possible reason for having high carrier concentrations in our SiNW devices is that the SiNWs surface states might be supporting a large amount charge carriers. When I-V characteristics of the device shown in Figure 4 are measured several weeks after thermal treatment, the nanowire conductance decreases by as much as a factor of 6.…”

Section: Doping and Contactmentioning

confidence: 99%

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Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties

2000

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The preparation of 20 ± 5 nm diameter Si nanowires and the electrical characterization of Si nanowire devices are presented. The nanowires were grown at 450−500 °C on solid substrates via the vapor−liquid−solid mechanism using Au or Zn nucleation catalysts and SiH4 as the silicon source. The wires were investigated by high-resolution transmission electron microscopy. Two types of wires were found, as characterized by different growth directions (〈111̄〉 and 〈211〉). Several types of devices, including crossed nanowire devices, four- and six-terminal devices, and three-terminal (gated) devices, were fabricated. For certain devices, various electrode compositions were also studied. The measured resistivity of these nanowires was separated from the contact resistance and could be varied from >105 Ω cm to ∼10-3 Ω cm. The wide variation in resistivity was related to the nature of the electrical contact to the wires (Schottky or Ohmic) and to the doping level of the wires. Doping of the nanowires was performed by the thermal diffusion of metal catalyst into the nanowires at 750−850 °C. Au nucleated nanowires exhibited resistivity values much lower than those of similarly treated Zn nucleated nanowires. This result is attributed to the much larger relative solid solubility of gold in silicon.

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Section: Resultsmentioning

confidence: 99%

Section: Doping and Contactmentioning

confidence: 99%

Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties

2000

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“…There are few key points worth mentioning about the estimates obtained using LFN spectroscopy: 1) unlike DLTS, LFN spectroscopy cannot determine specifically the position of the trap relative to the conduction or valence bands and 2) the degeneracy factors in (3) and (4) introduce uncertainty in the determination of the capture cross sections and trap density, as the degeneracy factors for transition metals in silicon can vary from fractional values to integers [29]- [31]. However, this error should be small compared with the magnitudes of capture cross sections and trap densities.…”

Section: Lfn Spectroscopymentioning

confidence: 99%

Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy

Sharma

Motayed

Krylyuk

et al. 2013

IEEE Trans. Electron Devices

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We report detailed characterization of electricallyactive deep-levels in doped Si nanowires (SiNWs) grown using catalyst-assisted vapor-liquid-solid (VLS) technique. Temperature-dependent low-frequency noise (LFN) spectroscopy was used to reveal the presence of generation-recombination related Lorentzian-type peaks along with 1/ f -type noise in these NWs. In Ni-catalyzed SiNWs, the correlated LFN spectroscopy detected electrically active deep-levels with ionization energies of 0.42 eV for the n-type and 0.22 eV for the p-type SiNWs, respectively. In Au-catalyzed n-and p-type SiNWs, the energies of the deep-levels were estimated to be 0.44 and 0.38 eV, respectively. These values are in good agreement with the known ionization energies of deep-levels introduced by Ni and Au in Si. Associated trap concentrations and hole and electron capture cross sections were also estimated. This paper clearly indicated the presence of electrically active deep-levels associated with unintentional incorporation of catalyst atoms in the VLS-grown SiNWs.Index Terms-Deep-levels, field-effect transistor (FET), generation-recombination (G-R) noise, low-frequency noise (LFN), silicon nanowire (SiNW).

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“…Un problème associé au précédent qui subsiste dans la caractérisation des niveaux profonds dans les semi-conducteurs est celui de l'attribution d'une valeur précise au facteur de dégénérescence g qui caractérise le niveau. Par exemple, suivant les auteurs, g est pris égal à 3/2 [16] ou à 4 [17] pour le niveau accepteur de l'or dans le silicium.…”

Section: Si Les Différents Résultats Obtenus Sur Le Nombre Et La Posiunclassified

Caractérisation des niveaux pièges dans les jonctions graduelles P+ N Si très dopées Au ou Pt

Oualid¹,

Gervais²,

Jerisian³

et al. 1980

Rev. Phys. Appl. (Paris)

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De nombreux travaux ont été consacrés à la caractérisation des niveaux pièges introduits par l'or ou le platine dans le silicium. Pourtant les paramètres caractéristiques de ces niveaux ne sont connus qu'avec une assez grande dispersion surtout en ce qui concerne le platine dans le silicium. Les résultats présentés ici ont été obtenus sur des jonctions P+ N graduelles dont la densité d'impuretés Au ou Pt est du même ordre de grandeur que celle des donneurs. Plusieurs méthodes de caractérisation des niveaux piègescapacité en régime transitoire, D.L.T.S., T.C.T.S., spectroscopie d'admittanceont été mises en oeuvre afin de déterminer les taux d'émission thermique de chaque niveau sur le plus grand intervalle de variations possible (10-2 s-1 à 107 s-1), condition pour laquelle les niveaux d'énergie et surtout les sections efficaces de capture peuvent être donnés avec le maximum de précision. Les résultats confirment que l'or introduit dans le silicium un niveau accepteur de signature en(T0/T)2 = 2,5 x 1012 exp(-0,546/kT) et un niveau donneur de signature ep(T0/T)2 = 5,1 x 1013 exp(-0,360/kT). D'autre part le platine introduit aussi dans le silicium deux niveaux principaux, un niveau accepteur de signature en(T0/T)2 = 1013 exp(-0,230/kT), et un niveau donneur de signature ep(T0/T)2 = 6 x 1012 exp(-0,32/kT). Ce dernier niveau, qui est toujours donné avec une très grande imprécision, pourraît être constitué de deux niveaux très rapprochés compris entre 0,30 eV et 0,36 eV. Dans le cas de surcompensation et lorsque le platine est diffusé dans une base de silicium dopé au phosphore, il apparait un niveau de très faible densité situé à Ev + 0,42 eV. Abstract.-Many works have been devoted to the characterisation of trap levels introduced by gold and platinum impurities in silicon. However the parameters of these levels are not well defined specially those assigned to platinum.

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Electrical Properties of n-Type Silicon Doped with Gold

Cited by 36 publications

References 12 publications

Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties

Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties

Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy

Caractérisation des niveaux pièges dans les jonctions graduelles P+ N Si très dopées Au ou Pt

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