Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy

Sharma, Deepak K.; Motayed, Abhishek; Krylyuk, Sergiy; Li, Qiliang; Davydov, Albert V.

doi:10.1109/ted.2013.2285154

Cited by 17 publications

(12 citation statements)

References 34 publications

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“…The temperature-dependent parametric measurements were performed in an open-cycle cryogenic probe station from Lakeshore using an Agilent B1500A semiconductor parameter analyzer (disclaimer in the notes section). LFN measurements were performed using a cross-correlation technique to minimize the effect of instrument noise [26]. The source-drain bias was provided by the internal batteries of the two independent SRS 570 amplifiers and the gate bias was provided using an independent battery source.…”

Section: Methodsmentioning

confidence: 99%

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS₂ devices

et al. 2014

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We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

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Section: Methodsmentioning

confidence: 99%

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS₂ devices

et al. 2014

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“…It is worthy to note that Ni is not electrically active impurity in silicon [ 29 ], but magnetic impurity. Thus, Ni presence in the whiskers should lead to a substantial change in their magnetic and magnetotransport properties.…”

Section: Methodsmentioning

confidence: 99%

Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity

et al. 2017

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The magnetization and magnetoresistance of Si whiskers doped with to boron concentrations corresponding to the metal-insulator transition (2 × 1018 cm−3 ÷ 5 × 1018 cm−3) were measured at high magnetic fields up to 14 T in a wide temperature range 4.2–300 K. Hysteresis of the magnetic moment was observed for Si p-type whiskers with nickel impurity in a wide temperature range 4.2–300 K indicating a strong interaction between the Ni impurities and the possibility of a magnetic cluster creation. The introduction of Ni impurity in Si whiskers leads to appearance and increase of the magnitude of negative magnetoresistance up to 10% as well as to the decrease of the whisker resistivity in the range of hopping conductance at low temperatures. The abovementioned effects were explained in the framework of appearance of magnetic polarons leading to modification of the conductive channels in the subsurface layers of the whiskers.

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“…The Lorentzian-type power spectrum density in the nanowire was the indication of G-R process, hence 1/f -type noise distribution was the indication of doped or defected electrically active sites. 36 Using the top down fabrication technique a silicon nanowire FET for H 2 detection along with the working principle is shown in the Figs. 10a, 10b.…”

Section: ( ) → ( ) [ ] O Gasmentioning

confidence: 99%

Review—Semiconductor Materials and Devices for Gas Sensors

Raju¹,

Li²

2022

J. Electrochem. Soc.

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Gas sensors are frequently used for detecting toxic gases and vapors for environmental control, industrial monitoring, and household safety. Semiconductor conductivity can be modified by doping or fine-tuned by applying an electric or magnetic field in an ultra-wide range (10-7 S/cm to 102 S/cm). The conduction of semiconductor is significantly raised or reduced upon the exposure to external conditions, such as temperature variation, light, heat, mechanical stress, or chemicals. Thus, semiconductors are excellent materials for sensors and the device structures are critical for sensing performance. The commonly used semiconductors materials include Si, Ge, III-V, and metal oxide semiconductors. Recently carbon-based materials gain signification attention due to their unique electrical, optical and mechanical properties. There are two major semiconductor gas sensors: resistor-based and FET-based sensors. In this review, the semiconductor materials, sensor device structure as well as gas sensing mechanisms will be systematically categorized, described and explored, with the focus on metal oxides, GaN, SiC, 2D-TMD and carbon-based gas sensors. The recent progress in new semiconductor gas sensors will be thoroughly reviewed and summarized, with a hope to show the trend in semiconductor gas sensor technology.

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Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy

Cited by 17 publications

References 34 publications

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS₂ devices

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS₂ devices

Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity

Review—Semiconductor Materials and Devices for Gas Sensors

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Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy

Cited by 17 publications

References 34 publications

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices

Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity

Review—Semiconductor Materials and Devices for Gas Sensors

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Product

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Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS₂ devices

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS₂ devices