Electrical properties of He+ ion-implanted GaInP

Fu, Sidi; Chin, T. P.; Zhu, B.; Tu, C. W.; Lau, S. S.; Asbeck, P.M.

doi:10.1007/bf02671221

Cited by 7 publications

(2 citation statements)

References 11 publications

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“…The main advantage compared to the usual wet-or dry-etched mesa technique is the surface planarity. The use of He ions for I 3 [2][3][4][5] offers a good compromise between penetration depth and sufficient inertness and long-term stability.…”

Section: Introductionmentioning

confidence: 99%

High-resolution x-ray diffraction investigations of He-implanted GaAs

Zeimer

Nebauer

2000

Semicond. Sci. Technol.

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The isolation of devices via ion implantation is one of the standard procedures in III-V processing, but so far little information is available concerning the degree of damage generated in regions near devices before and after annealing steps. We report on He implantation with typical ion dose and energy ranges into n-GaAs epilayers using high-resolution x-ray diffraction (HRXRD) for characterization. From analysis of rocking curves it is found that up to doses of 10 14 cm −2 in the ion energy range of 25-370 keV a rapid thermal annealing treatment at 400 • C is sufficient to remove lattice distortions observed after implantation. The depth of the damaged region estimated by HRXRD is compared to transport of ions in matter calculations and secondary-ion mass spectroscopy measurements.

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Section: Introductionmentioning

confidence: 99%

High-resolution x-ray diffraction investigations of He-implanted GaAs

Zeimer

Nebauer

2000

Semicond. Sci. Technol.

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“…A general advantage of ion implantation is the lateral selectivity when using suitable masking techniques and the preservation of surface planarity [2]. Ion-beaminduced isolation is particularly advantageous when reduced parasitic capacitances, reduced surface recombination currents and improved heat spreading capabilities are required in devices [3]. A number of ion species including helium ions have already been investigated for isolation purposes [4].…”

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confidence: 99%

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants

Ahmed

Gwilliam

Sealy

2001

Semicond. Sci. Technol.

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The formation of thermally stable highly resistive regions in n-type GaAs layers during helium ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, was investigated and presented here. The substrate temperatures were chosen to be room temperature (RT), 100 and 200 • C. Semi-insulating GaAs wafers of (100) orientation were implanted with multi-energy 29 Si atoms to create a flat dopant distribution of about 0.7 µm in thickness. A uniform damage density was formed within the conductive layer by 2 × 10 14 cm −2 helium implantation at 600 keV to isolate the structure. Resistivity and Hall measurements were performed in order to study the evolution of the sheet resistance and Hall mobility as a function of post implant annealing temperature in these resistors implanted at three different temperatures. The samples were annealed in the range 100-800 • C and an optimum isolation of >10 7 ohms/ was achieved for samples implanted at either RT or elevated temperatures after annealing at 400 or 450 • C, respectively. Annealing at higher temperatures returned the resistivity to a value close to that of the starting material and it was found that RT implants recover quicker than elevated temperature implants. The isolated regions exhibited good stability to heat treatment up to 550 or 650 • C for 100 or 200 • C implants, respectively. No such annealing window for the thermal stability of the obtained isolation was found for samples implanted at room temperature. It is believed that isolating defects are more thermally stable in the case of hot implants than those formed by RT implantation.

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