Electrical properties of GaSb Schottky diodes and p-n junctions

Polyakov, A. Y.; Stam, M.; Milnes, A. G.; Schlesinger, T. E.

doi:10.1016/0921-5107(92)90003-r

Cited by 34 publications

(14 citation statements)

References 18 publications

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“…Another hole trap of unknown origin that could be connected with native defects was observed in the range of activation energies 0.3 to 0.35 eV. 23 A similar deep level with energy of 0.33 eV has been reported by Polyakov et al 9 who have investigated an undoped GaSb ͑MBE͒ by means of DLTS as well.…”

Section: Resultsmentioning

confidence: 60%

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Kindl

Toušková

Hulicius

et al. 2004

Journal of Applied Physics

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Dark current–voltage (I–V) characteristic measurement in the temperature range from −190 °C to 65 °C was carried out on GaSb p-n homojunctions prepared by low-pressure metalorganic vapor phase epitaxy. It was shown that the charge transport mechanism in these homojunctions is strongly affected by the growth rate of GaSb epitaxial layers. Samples prepared at higher growth rate (40 nm/min.) exhibit an anomalous low-temperature peak of tunneling current which can be explained by the presence of a narrow band of energies due to high concentration of native defects, probably GaSb antisites. The same defect levels are responsible for the generation–recombination current which dominates in these samples at higher temperatures. On the other hand, quite different behavior was found in the case of slowly grown (20 nm/min) samples. At sufficiently low temperatures, a current maximum near 50 mV of forward voltage points out a band-to-band tunneling as a prevailing transport mechanism. With increasing temperature, however, this maximum disappears as at least one side of the junction becomes nondegenerate. Combination of the tunneling via energy states in the band gap and the thermal current governs the forward I–V characteristics at higher temperatures, whereas the direct tunneling remains dominant in the reverse direction.

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Section: Resultsmentioning

confidence: 60%

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Kindl

Toušková

Hulicius

et al. 2004

Journal of Applied Physics

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“…As is observable in Fig. 6, the measured photoresponse reaches a plateau at photon energies for which ␣ is around few 10 3 cm Ϫ1 which implies a value of L p ӷ1.2 m, this latter value was measured by electron beam-induced current ͑EBIC͒ and was previously reported on by Polyakov et al 6 Thus, by fitting the spectral response through Eq. ͑1͒, we obtained a hole diffusion length of about 6 m as illustrated in Fig.…”

Section: Spectral Response Analysissupporting

confidence: 68%

“…3 However, more recently it has been shown that a pinning of the Fermi level near the top of the valence band 4,5 is responsible for an almost independent Schottky barrier height from the metal utilized. 6 In particular, Au/GaSb Schottky diodes show higher barrier heights 6,7 ͑0.60 eV͒ than the corresponding In x Ga 1Ϫx As alloy with similar band gap. In fact, with a direct band gap energy equal to 0.7525 eV at 300 K, GaSb shows one of the highest Schottky barrier height which deviates from the simple rule q⌽ b ϭ2/3E g .…”

Section: Introductionmentioning

confidence: 99%

Photoelectric properties of GaSb Schottky diodes

Rotelli

Tarricone

Gombia

et al. 1997

Journal of Applied Physics

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Electrical and photoelectrical properties of GaSb Schottky diodes obtained by evaporating gold metal dots on sulphur treated or chemically etched surfaces of Te-doped n-GaSb crystals ͑grown from melt by Czochralski method͒, with Hall carrier density in the range of 1.8-6.5ϫ10 17 cm Ϫ3 , were studied. J/V characteristics with an ideality factor ranging between 1.17 and 1.22 were measured on Schottky diodes prepared on sulphur passivated surfaces. After image force effect correction, photoelectric determination of the barrier height ͑q⌽ b ϭ0.598Ϯ0.006 eV͒ has been found to be independent of the surface treatment and, in the case of the sulphur-treated diodes, in good agreement with the value obtained through C Ϫ2 vs reverse bias measurements ͑q⌽ b ϭ0.6Ϯ0.01 eV͒. Through spectral response analysis of Schottky diodes, an estimation of minority carrier diffusion length value is given. A major role of sulphur passivation on preparation of Schottky barrier with good and well reproducible electrical properties is confirmed.

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“…No Richardson constant values for this structure are given in the literature. Other researches have reported previously that the capacitance-voltage method gives higher values for the barrier height [16,23,24,25]. We observe that the barrier height found is lower than that obtained by capacitancevoltage measurements, performed on the same heterojunction, V d2 ¼ 792 meV [7].…”

Section: Barrier Height At Gasb(n þ )/Gaalassb(p) Interfacementioning

confidence: 44%

Current-Voltage Characteristic and Schottky Barrier Height of the GaAlAsSb(p)/GaSb(n+) Heterostructure

Kaci

Boukredimi

Mébarki

2001

phys. stat. sol. (a)

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The GaAlAsSb/GaSb is an interesting system for optoelectronic device technology and particularly for the preparation of lasers and photodetectors. The current-voltage characteristic of Ga 0.53 Al 0.47 As 0.04 Sb 0.96 (p)/GaSb(n þ ) heterojunctions, obtained by liquid phase epitaxy on GaSb substrate, is studied. The current of the heterojunction, which is essentially a thermoionic emission of holes, has a behavior identical to that of the Schottky diode, allowing to derive the barrier height V b ¼ 685 meV for this heterostructure. The Richardson constant of the system is calculated to be 49.1 A cm À2 K À2 . The band offsets at the interface are determined as DE c ¼ 460 meV, DE v ¼ 128 meV, in agreement with other works. The variation of the valence band offset with Al composition shows a good agreement with the theoretical models proposed by Jaros and Mujica.

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Electrical properties of GaSb Schottky diodes and p-n junctions

Cited by 34 publications

References 18 publications

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Photoelectric properties of GaSb Schottky diodes

Current-Voltage Characteristic and Schottky Barrier Height of the GaAlAsSb(p)/GaSb(n+) Heterostructure

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