Photoelectric properties of GaSb Schottky diodes

Abstract

Electrical and photoelectrical properties of GaSb Schottky diodes obtained by evaporating gold metal dots on sulphur treated or chemically etched surfaces of Te-doped n-GaSb crystals ͑grown from melt by Czochralski method͒, with Hall carrier density in the range of 1.8-6.5ϫ10 17 cm Ϫ3 , were studied. J/V characteristics with an ideality factor ranging between 1.17 and 1.22 were measured on Schottky diodes prepared on sulphur passivated surfaces. After image force effect correction, photoelectric determination of the barrier height ͑q⌽ b ϭ0.598Ϯ0.006 eV͒ has been found to be independent of the surface treatment and, in the case of the sulphur-treated diodes, in good agreement with the value obtained through C Ϫ2 vs reverse bias measurements ͑q⌽ b ϭ0.6Ϯ0.01 eV͒. Through spectral response analysis of Schottky diodes, an estimation of minority carrier diffusion length value is given. A major role of sulphur passivation on preparation of Schottky barrier with good and well reproducible electrical properties is confirmed.

Variety Transformation of Compound at GaSb Surface under Sulfur Passivation

“…Recently, many different technologies for GaSb passivation have received much attention due to the prominent improvement of electrical and optical characteristics. [2][3][4][5][6][7][8][9][10][11][12][13] Among these, sulfuring GaSb with a (NH 4 ) 2 S solution is a noteworthy one that has the merits of thermal stability and simple treatment. However, it is not yet known how the electronic properties of sulfured GaSb surfaces can be improved.…”

Current-Voltage Characteristic and Schottky Barrier Height of the GaAlAsSb(p)/GaSb(n+) Heterostructure

“…No Richardson constant values for this structure are given in the literature. Other researches have reported previously that the capacitance-voltage method gives higher values for the barrier height [16,23,24,25]. We observe that the barrier height found is lower than that obtained by capacitancevoltage measurements, performed on the same heterojunction, V d2 ¼ 792 meV [7].…”

“…Using values given in Table 1, the barrier height V b , characterizing the structure can be deduced from the law giving the saturation current I s (equation (2)), V b ¼ 685 meV. Rotelli et al [23] give A * ¼ 5:1 AK À2 cm À2 for the n-GaSb/Au Schottky diode. No Richardson constant values for this structure are given in the literature.…”

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

“…Поверхностно-барьерные структуры на основе n-GaSb привлекают особое внимание вследствие высокого быстродействия, квантовой эффективности и сравнительно большой высоты барьера Шоттки по сравнению с другими материалами, имеющими близкую ширину запрещенной зоны [318,319]. Поэтому для улучшения их параметров активно используются различные методы модификации поверхности полупроводника растворами электролитов.…”