Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence

Voronina, T. I.; Dzhurtanov, B. E.; Lagunova, T. S.; Sipovskaya, M. A.; Sherstnev, V. V.; Yakovlev, Yu. P.

doi:10.1134/1.1187389

Cited by 13 publications

(7 citation statements)

References 3 publications

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“…As can be seen from figure 2, increasing the indium content in the liquid phase and correspondingly in the In x Ga 1−x As y Sb 1−y solid solution leads to a decrease in the PL peak intensity. This fact is in good agreement with results reported in [5,6]. As shown in [5,6], increasing the indium content in In x Ga 1−x As y Sb 1−y solid solutions leads to a decrease in the concentration of V Ga Ga Sb native acceptors which are the basic centres of radiative transitions in GaSb-based solid solutions.…”

Section: Choice Of Growth Methodssupporting

confidence: 91%

Obtaining GaSb/InAs heterostructures by liquid phase epitaxy

Maronchuk¹,

Kurak²,

Andronova³

et al. 2004

Semicond. Sci. Technol.

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Features of liquid phase epitaxy of GaSb/InAs heterostructures are considered. A modified method of pulse cooling of saturated solution-melt is offered. This method allows us to avoid InAs substrate dissolution during contact with a Ga-Sb liquid phase. Also it is shown that forming In x Ga 1−x As y Sb 1−y solid solutions due to GaSb epitaxial layer dissolution by InAs substrate is energetically unfavourable.

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Section: Choice Of Growth Methodssupporting

confidence: 91%

Obtaining GaSb/InAs heterostructures by liquid phase epitaxy

Maronchuk¹,

Kurak²,

Andronova³

et al. 2004

Semicond. Sci. Technol.

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“…The doping the GaAlAsSb solid solutions with germanium have been investigated in detail in Ref. 9. For photodiode applications we doped these materials with Ge up to lx 1018cm 3.…”

Section: Growth Of Gaaiassb Solid Solutionsmentioning

confidence: 99%

Fabrication details of GaInAsSb-based photodiode heterostructures

et al. 2000

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In the present paper, we report the results of our investigation, which aims to upgrade the GaInAsSb-based photodiode heterostructure technology. The main requirements on GaInAsSb solid solutions from the viewpoint of nearinfrared photodiode applications are considered. Such methods for decreasing a carrier concentration in the epitaxial layers of the solid solutions as doping with a donor impurity, the use of rare-earth element Yb, growth from lead containing melt are discussed. The possibility of decreasing the GaInAsSb band gap resulting in long-wavelength photosensitivity threshold shift is demonstrated. We have made GaInAsSb/GaA1AsSb photodiodes with the longwavelength photosensitivity threshold of 2.4 .tm. At -2V reverse bias a lowest dark current density is 3x iO A/cm2, and the a quantum efficiency is 60-70% at 2=2.O-2. 1.tm,

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“…5 The acceptor levels E A1 and E A2 originate from the doubly charged structure defect ͑V In -In As ͒, a complex of an In vacancy ͑V In ͒ with an In antisite defect ͑In As ͒, which tends to form in p-type InAs. 6,7 In a perfect InAs lattice, an In atom is bonded to four As atoms and vice versa. However, when an In atom exchanges position with a neighboring As atom, an antisite pair In As -As In is formed.…”

Section: Negative Differential Resistance and Electroluminescence Fromentioning

confidence: 99%

Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy

Krier

Huang

2005

Applied Physics Letters

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Negative differential resistance has been observed from InAs homojunction light-emitting diodes grown using liquid-phase epitaxy at 455°C. The devices were characterized using current–voltage (I–V) and electroluminescence spectroscopy measurements to obtain information about structure defects in InAs. Two distinct negative differential resistance regions were observed in the forward bias I–V characteristic, consistent with carriers tunnelling into defect levels within the InAs band gap. At large forward bias, carrier injection into the defect levels resulted in electroluminescence peaking at 372meV and then at 392meV with increasing current. Analysis based on a native lattice complex defect indicates that carriers recombine via the defect levels at temperatures up to 175K.

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Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence

Cited by 13 publications

References 3 publications

Obtaining GaSb/InAs heterostructures by liquid phase epitaxy

Obtaining GaSb/InAs heterostructures by liquid phase epitaxy

Fabrication details of GaInAsSb-based photodiode heterostructures

Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy

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