Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy

Abstract

Negative differential resistance has been observed from InAs homojunction light-emitting diodes grown using liquid-phase epitaxy at 455°C. The devices were characterized using current–voltage (I–V) and electroluminescence spectroscopy measurements to obtain information about structure defects in InAs. Two distinct negative differential resistance regions were observed in the forward bias I–V characteristic, consistent with carriers tunnelling into defect levels within the InAs band gap. At large forward bias, carrier injection into the defect levels resulted in electroluminescence peaking at 372meV and then at 392meV with increasing current. Analysis based on a native lattice complex defect indicates that carriers recombine via the defect levels at temperatures up to 175K.

Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy

“…12 Relatively few experimental studies on electrical conduction through defects have been reported. 13 Research on defects has focused on the optical properties and microstructures. 14,15 In this study, negative differential resistance ͑NDR͒ behavior was observed when measuring the electrical properties of defective single crystalline GaN nanowires.…”

Electrical Property of Infrared-Sensitive InAs Solar Cells

“…As an important infrared material, InAs (band gap 0.36 eV at room temperature) has been used to fabricate various infrared optoelectronic devices such as detectors and light emitting diodes. [10,11] In this study, an infrared-sensitive InAs solar cell is fabricated and its current-voltage characteristics in the dark and under AM1.5 illumination at 300 K and 77 K are investigated.…”