2004
DOI: 10.1134/1.1734674
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Electrical properties of fine-grained polycrystalline CdTe

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Cited by 9 publications
(5 citation statements)
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“…It is well known, that grain boundaries strongly affect the electrical properties, i.e., the mobility and charge carrier lifetime [11]- [13]. If we carefully assume, that the PL intensity is indicative to the charge carrier lifetimes, we expect the mostly promising films in the temperature region between 350 Fig.…”
Section: A Growth On Si/sio Substratesmentioning
confidence: 99%
“…It is well known, that grain boundaries strongly affect the electrical properties, i.e., the mobility and charge carrier lifetime [11]- [13]. If we carefully assume, that the PL intensity is indicative to the charge carrier lifetimes, we expect the mostly promising films in the temperature region between 350 Fig.…”
Section: A Growth On Si/sio Substratesmentioning
confidence: 99%
“…The mechanisms of the transport of current carriers to the intersgrain boundaries of the polycrystalline films of p-CdTe, grown on glass substrates, are discussed in detail in [9]. The authors determined the energy of intergrain potential boundaries of 0.09 eV for p-CaTe films.…”
Section: Introductionmentioning
confidence: 99%
“…Cadmium telluride (CdTe) is one of the most promising polycrystalline materials for thin film solar cells due to its physical properties: It has a direct band gap (approximately 1.5 eV) with a high absorption coefficient (larger than 10 5 cm-1 at wavelengths around 700 nm), so that only thin film layers (a few microns) are needed for the absorption of the most of the solar spectra photons with energy higher than the band gap, and it can be obtained as p-type. Some of the commonly used low cost growth techniques for CdTe thin film production include electrodeposition, spray pyrolysis and close-spaced sublimation [3].CdTe is a strong competitor to solar cells and low cost because it has a direct energy gap, Up to 1.53 eV at RT, and Absorption coefficient (α< 10 4 cm -1 ) at The visible spectrum, CdTe thin films can be deposited with more than one technique, including vacuum evaporation, hot-luminous fumigation, molecular deposition, electrolysis [4].…”
Section: Introductionmentioning
confidence: 99%