Electrical properties of Cd-doped and Mg-doped InP

Abstract

We report on Hall transport measurements of two p-type Cd-doped InP epilayers and two Mg-doped InP layers with low compensation levels. The acceptor concentrations and the compensation ratios were determined with an extended-state Hall transport model, which provided a good description of the mobilities and the free-hole concentrations. Binding energies of 51 and 38.7 meV were measured for the purest Cdand Mg-doped samples, respectively. Nearest-neighbor hopping was present in all samples, consistent with a model by Shklovskii and Efros. Saturation of the corresponding conductivity was observed in the Mg-doped samples, in excellent agreement with a model by Shklovskii and Yanchev.Variable-range hopping was observed below 6 K, and was found to be consistent with Mott's expression for the conductivity. An unusual sign reversal of the Hall constant was observed in the Mg-doped samples at the onset of impurity conduction.

Theory of Mn–H co-doping for GaAs and related magnetic semiconductors

“…The calculated electron affinity of Mn In is 0.1 eV greater than Mg In , which has an acceptor level at E v þ 39 meV [24], consistent with a relatively shallow acceptor level. H passivates Mn In , yielding a system with S ¼ 5 2 .…”

Analysis of low‐temperature data of Hall‐effect measurements on p‐type InP using a small‐polaron theory

“…for the NNH conduction according to Shklovskii and Efros , and deduced the value of hopping activation energy k B T 3 from the slope of the Arrhenius plot of σT at low temperatures. The values of T 3 obtained by Benzaquen et al are also tabulated in parentheses in Table . Owing to the different temperature dependence of the pre‐exponential factor assumed, slight differences are seen in Table between the values of T 0 obtained in the present analysis and those of T 3 obtained by Benzaquen et al .…”

“…In Refs. , Benzaquen et al measured the dopant concentration in Mg‐ and Zn‐doped samples by means of secondary ion mass spectrometry (SIMS). The measured values of the dopant concentrations are also shown in Table .…”

“…In their studies on p‐type InP, Benzaquen et al assumed the form of for NNH according to Shklovskii and Efros , and deduced the hopping activation energy E 3 = k B T 3 from the slope of the Arrhenius plot of σT at low temperatures. Note that the form of Eq.…”

“…In such saturated NNH situation, Benzaquen et al considered in Ref. that, instead of Eq. , σ ib should be described as where X = k B T D / E F , according to Shklovskii and Yanchev .…”