Electrical Properties of Black Phosphorus Single Crystals Prepared by the Bismuth-Flux Method

Abstract

Systematic measurement of the electrical transport phenomena of black phosphorus grown by the all-closed bismuth-flux method has been performed in the range from room temperature down to 0.5 K for the electrical resistivity and down to 1.5 K for the Hall effect and the magnetoresistance effect. These samples exhibited p-type conduction with two types of acceptors, of which activation energies were 26.1 meV and 11.8 meV, respectively. The effective concentrations of acceptors were typically 1.36×1015 cm-3 for the deeper level and 0.44×1015 cm-3 for the shallower level. The maximum of the Hall mobility was found to be 2×104 cm2/Vs around 20 K. A new observation of n-type conduction below about 7 K for some of these samples suggested the existence of a surface inversion layer as a channel of electron conduction.

Electronic and Magnetic Properties of Black Phosphorus

“…According to Ziletti et al a horizontal POP oxygen bridge can result a new donor type band near the conduction band. On the other hand Narita et al, Akahama et al and Baba et al claimed that according to their Hall and conductivity measurements the small gap is arising from hole dopants and the gap for the acceptor band is about 15–19.5 meV, 11.1–18.9 meV, and 21.4(1) meV, respectively, which agrees roughly with our results.…”

Chemical functionalization of 2D black phosphorus

“…In particular, the hole mobility of monolayer BP may be further improved to 10 000–26 000 cm 2 V −1 S −1 . The hole mobility of five‐layer BP is 4800–6400 cm 2 V −1 S −1 , according to the theoretically predicted phonon‐limited carrier mobility 143‐146 . Such a high carrier mobility enables BP to be used in FET applications, and a considerably high ON/OFF ratio (10 3 –10 5 ) has been achieved for few‐layer BP 2 .…”

“…The hole mobility of five-layer BP is 4800-6400 cm 2 V −1 S −1 , according to the theoretically predicted phonon-limited carrier mobility. [143][144][145][146] Such a high carrier mobility enables BP to be used in FET applications, and a considerably high ON/OFF ratio (10 3 -10 5 ) has been achieved for few-layer BP. 2 Charge transfer of BP in FET devices is ambipolar because the Fermi level can be shifted to both the valence and conduction bands.…”

Multipurpose Black-Phosphorus/hBN Heterostructures

“…Moreover, the higher carrier mobilities (1, 000 cm 2 /Vs) 10 compared to TMDC monolayers, the strongly anisotropic electronic and optical properties, [11][12][13][14][15] as well as the robustness under elastic strain [16][17][18] have already ensured novel uses of BP in electronic, 9,10,12,19,20 photonic, [21][22][23] and thermoelectric 24,25 applications.…”