Electrical properties of as-grown and proton-irradiated high purity silicon

Křupka, J.; Karcz, W.; Kamiński, P.; Jensen, Leif

doi:10.1016/j.nimb.2016.05.007

Cited by 14 publications

(14 citation statements)

References 40 publications

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“…It is also found that with the increase in temperature, the real part tends to increase with the increase of temperature. This is in line with the results of References [13,15], where a more broadband temperature range was considered. However, it has to be mentioned that the variation of the permittivity with frequency and temperature is very small, and the overall variation is within 11.75 ± 0.06.…”

Section: Experiments and Resultssupporting

confidence: 91%

“…The loss tangent of the intrinsic silicon is on the order of 10 −3 , showing not too much difference between the third and fifth order fitting. However, it has to be mentioned that being constrained by the accuracy of the free space method on the loss factor, it is one order larger than the results in References [14][15][16]. It is probably due to this reason that the tendency of loss factor with frequency was not exhibited.…”

Section: Experiments and Resultsmentioning

confidence: 83%

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Permittivity of Undoped Silicon in the Millimeter Wave Range

Yang

Liu

et al. 2019

Electronics

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With the rapid development of millimeter wave technology, it is a fundamental requirement to understand the permittivity of materials in this frequency range. This paper describes the dielectric measurement of undoped silicon in the E-band (60–90 GHz) using a free-space quasi-optical system. This system is capable of creating local plane wave, which is desirable for dielectric measurement in the millimeter wave range. Details of the design and performance of the quasi-optical system are presented. The principle of dielectric measurement and retrieval process are described incorporating the theories of wave propagation and scattering parameters. Measured results of a sheet of undoped silicon are in agreement with the published results in the literature, within a discrepancy of 1%. It is also observed that silicon has a small temperature coefficient for permittivity. This work is helpful for understanding the dielectric property of silicon in the millimeter wave range. The method is applicable to other electronic materials as well as liquid samples.

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Section: Experiments and Resultssupporting

confidence: 91%

Section: Experiments and Resultsmentioning

confidence: 83%

Permittivity of Undoped Silicon in the Millimeter Wave Range

Yang

Liu

et al. 2019

Electronics

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“…For example, such utilisation is of fundamental importance for the best stability frequency sources 1 2 , fundamental physics tests 3 4 , gravitational wave detection 5 6 and opto-mechanical systems 7 8 . Another example is quantum electrodynamics involving dielectric crystals where quantum signal coherence, one of the most important parameters, is related to various loss mechanisms and thus on crystal properties 9 10 11 12 13 14 15 16 17 , for these applications the properties at the energy level of a single photon is of paramount importance. In all these fields, special attention has been devoted to Silicon due to its excellent optical and mechanical properties and abundance of associated technologies for growth, treatment, implantation, etc.…”

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confidence: 99%

Determination of Low Loss in Isotopically Pure Single Crystal 28Si at Low Temperatures and Single Microwave Photon Energy

Kostylev

Goryachev

Буланов

et al. 2017

Sci Rep

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The low dielectric losses of an isotopically pure single crystal 28Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order 2 × 106 (dielectric loss ~5 × 10−7) at high powers, degrading to 7 × 10−5 (dielectric loss ~1.4 × 10−6 at single photon energy. A very low-loss narrow line width paramagnetic spin flip transition was detected with extreme sensitivity in 28Si, with very small concentration below 1010 cm−3 (less than 10 parts per trillion) and g-factor of 1.995 ± 0.008. Such determination was only possible due to the low dielectric photonic losses combined with the long lifetime of the spin transition (low magnetic loss), which enhances the magnetic AC susceptibility. Such low photonic loss at single photon energy combined with the narrow line width of the spin ensemble, indicate that single crystal 28Si could be an important crystal for future cavity QED experiments.

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“…Several have been measured by this technique versus temperature and frequency (employing higher-order modes excited in one sample). Results of high resistivity semiconductor measurements, including Si [ 58 , 59 ], GaAs [ 60 ], GaP [ 60 ], SiC [ 61 ], GaN [ 62 ] have already been published. Because the term of the effective dielectric loss tangent depending on conductivity decreases with frequency in a well-known manner (8), the combination of frequency and temperature measurements can separate the dielectric and the conducting terms, even if they are comparable.…”

Section: Microwave Measurements On Semiconductors Conductors and Superconductorsmentioning

confidence: 99%

“…Such behavior is typical of most high resistivity semiconductors and low loss dielectrics. In Figure 8 b, the results of resistivity measurements of high resistivity silicon samples are presented [ 59 ]. Red solid points correspond to the as-grown float zone (FZ) silicon sample, having a nominal resistivity of about 85 kΩcm at room temperature.…”

Section: Microwave Measurements On Semiconductors Conductors and Superconductorsmentioning

confidence: 99%

Microwave Measurements of Electromagnetic Properties of Materials

Křupka

2021

Materials

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A review of measurement methods of the basic electromagnetic parameters of materials at microwave frequencies is presented. Materials under study include dielectrics, semiconductors, conductors, superconductors, and ferrites. Measurement methods of the complex permittivity, the complex permeability tensor, and the complex conductivity and related parameters, such as resistivity, the sheet resistance, and the ferromagnetic linewidth are considered. For dielectrics and ferrites, the knowledge of their complex permittivity and the complex permeability at microwave frequencies is of practical interest. Microwave measurements allow contactless measurements of their resistivity, conductivity, and sheet resistance. These days contactless conductivity measurements have become more and more important, due to the progress in materials technology and the development of new materials intended for the electronic industry such as graphene, GaN, and SiC. Some of these materials, such as GaN and SiC are not measurable with the four-point probe technique, even if they are conducting. Measurement fixtures that are described in this paper include sections of transmission lines, resonance cavities, and dielectric resonators.

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Electrical properties of as-grown and proton-irradiated high purity silicon

Cited by 14 publications

References 40 publications

Permittivity of Undoped Silicon in the Millimeter Wave Range

Permittivity of Undoped Silicon in the Millimeter Wave Range

Determination of Low Loss in Isotopically Pure Single Crystal 28Si at Low Temperatures and Single Microwave Photon Energy

Microwave Measurements of Electromagnetic Properties of Materials

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