Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source

Kim, J.M.; Lee, Y.T.; Song, Jin Dong; Kim, J.H.

doi:10.1016/j.jcrysgro.2004.01.030

Cited by 10 publications

(4 citation statements)

References 18 publications

(25 reference statements)

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“…[ 69 ] GaAsBi can overcome the wavelength limitation of LT‐GaAs, without the increase in carrier lifetime and decrease in conductivity observed in InGaAs. [ 74 ]…”

Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

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“…[ 69 ] GaAsBi can overcome the wavelength limitation of LT‐GaAs, without the increase in carrier lifetime and decrease in conductivity observed in InGaAs. [ 74 ]…”

Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Especially the LT growth of InGaAs and AlInAs has been under investigation, motivated either by the use in connection with optical fiber systems operating at 1.3 [11] and 1.55 mm [12,13] or by the use as an insulating layer [14,15].…”

Section: Introductionmentioning

confidence: 99%

Low-temperature growth and post-growth annealing of GaAsSb

Sigmund¹,

Hartnagel²

2005

Journal of Crystal Growth

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“…It has been found that the layers grown at the lowest temperatures (180 • C) were characterized by rather short carrier lifetimes of ∼2.3 ps, but had very low resistivity. Doping of LTG In 0.53 Ga 0.47 As with Be has led to some reduction in the free electron density [96,97] (from approximately 2.4 × 10 18 cm −3 to 5×10 16 cm −3 -still too large for applications of this material in photoconductor devices); the carrier lifetime has decreased simultaneously to ∼1.9 ps [98].…”

Section: Materials Sensitive At 1 µM and Longer Wavelengths 341 Ingaasmentioning

confidence: 99%

Semiconductors for terahertz photonics applications

Krotkus¹

2010

J. Phys. D: Appl. Phys.

109

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Abstract:Generation and measurement of ultrashort, sub-picosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of the far-infrared spectroscopy and imaging. This technique -THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility, and large dark resistivity. Here we will review most important developments in the field of investigation of such materials. Main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. Main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

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Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source

Cited by 10 publications

References 18 publications

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Low-temperature growth and post-growth annealing of GaAsSb

Semiconductors for terahertz photonics applications

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