Low-temperature growth and post-growth annealing of GaAsSb

Sigmund, Jochen; Hartnagel, H.L.

doi:10.1016/j.jcrysgro.2005.01.008

Cited by 11 publications

(7 citation statements)

References 20 publications

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“…The shift in the LTG-GaAsSb lattice constant is 0.24%, which is twice as large as we observed for LTG-GaAs, produced under identical growth ͑V/III-flux ratio, substrate temperature, growth rate͒ and annealing conditions ͑600°C, 10 min͒. 10 In addition to a shift in the XRD peak, the reflection becomes increasingly asymmetric with higher annealing temperatures. This is illustrated by an asymmetry factor ␣ in Fig.…”

Section: Resultssupporting

confidence: 51%

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Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications

Sigmund

Pavlidis

Hartnagel

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Growth and characterization of GaAsSb metamorphic samples on an InP substrate We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220-315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out of the layer during annealing. However, dark-field and Z-contrast transmission electron microscopy analyses revealed the formation of GaAsBi clusters with a Bi content higher than in the surrounding matrix, as well as the presence of metallic As clusters. The apparent reduction of the lattice constant can be explained by a twofold process: the diffusion of the excess As incorporated within As Ga antisites to As clusters, and the reduction of the Bi content in the GaAs matrix due to diffusion of Bi to GaAsBi clusters. Diffusion of both As and Bi are believed to be assisted by the native point defects, which are present in the low-temperature as-grown material. V C 2013 AIP Publishing LLC. [http://dx.

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Section: Resultssupporting

confidence: 51%

“…More details on the low-temperature growth of GaAsSb can be found elsewhere. 10 Pieces of the wafer were ex situ annealed at 400, 550, and 600°C for 10 min in a rapid thermal annealing ͑RTA͒ oven under nitrogen atmosphere. During annealing a sample sandwich was used to minimize group-V outdiffusion from the surface.…”

Section: Methodsmentioning

confidence: 99%

Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications

Sigmund

Pavlidis

Hartnagel

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Extensive experimental studies [1][2][3][4][5][6][7][8][9][10] have addressed optical properties concerning such technological applications. However, there is still disagreement about the fundamental parameters such as the bowing of the fundamental energy gap, i.e.…”

Section: Introductionmentioning

confidence: 99%

Alloying effect in the III-As–Sb ternary systems

Belabbes¹,

Zaoui²,

Ferhat³

2007

Materials Science and Engineering: B

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“…20,23,24) Because the investigated GaAsSb layers (∼1 µm) were grown on GaAs (001) substrates at 530 °C by MBE, the postgrowth annealing process conducted at 600 °C is likely to have promoted additional or altogether new defects such as Sb clustering and Sbantisite defects, which is relevant after high-temperature treatment. 25) However, chemical identification and the formation mechanism of these defects require further investigation in the future. In summary, we presented two methods of improving the efficiency of spin detection based on GaAsSb.…”

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confidence: 99%

Increase in the efficiency of spin detection based on GaAsSb by applying a longitudinal magnetic field or a postgrowth annealing process

Qiu

Zhang

Wang

et al. 2016

Appl. Phys. Express

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A substantial improvement in the efficiency of spin detection based on GaAs0.94Sb0.06 is realized by applying either a longitudinal magnetic field or a postgrowth annealing process. The degree of optical spin polarization can be increased from ∼19 to ∼40% at ∼105 K under a longitudinal magnetic field of 10 T. On the other hand, through the shortening of the electron lifetime by the use of a postgrowth annealing process, the efficiency for optical spin detection can be enhanced by a factor of nearly 4 from ∼6 to ∼23% at ∼180 K under zero external magnetic field.

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Low-temperature growth and post-growth annealing of GaAsSb

Cited by 11 publications

References 20 publications

Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications

Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications

Alloying effect in the III-As–Sb ternary systems

Increase in the efficiency of spin detection based on GaAsSb by applying a longitudinal magnetic field or a postgrowth annealing process

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