“…Figures 3 and 4 . show the I D –V G characteristics with different temperature, showing an increase of the drain current as the temperature increases, which is consistent with the observation in some recent studies [ 16 , 17 ]. Fig.…”
In this work, we demonstrated Ga2O3-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga2O3:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga2O3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga2O3 power MOSFETs.
“…Figures 3 and 4 . show the I D –V G characteristics with different temperature, showing an increase of the drain current as the temperature increases, which is consistent with the observation in some recent studies [ 16 , 17 ]. Fig.…”
In this work, we demonstrated Ga2O3-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga2O3:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga2O3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga2O3 power MOSFETs.
“…β-Ga 2 O 3 is an ultrawide band gap material ( E g = 4.8 eV) and possesses a critical electric field value of 8 MV/cm, superior to more conventional semiconductors such as Si, GaN, and SiC. Consequently, β-Ga 2 O 3 has emerged as a next-generation material for power device applications, namely, the field-effect transistor − and Schottky barrier diode. − Its outstanding material characteristics and low crystal growth cost can solve critical and ongoing problems for both SiC- and GaN-based devices. − For β-Ga 2 O 3 , costs are an order of magnitude lower, and films can be grown heteroepitaxially by different methods . Owing to these promising economic factors, in this study, high-quality heteroepitaxial β-Ga 2 O 3 layers are grown by metal–organic chemical vapor deposition (MOCVD) on the sapphire for the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) …”
β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with various unintentionally doped (UID) layer thicknesses (50, 100, and 200 nm) of (2̅ 01) beneath the Si tetraethoxysilane (TEOS)-doped film were grown by metal− organic chemical vapor deposition on a (0001) sapphire substrate. The UID layer thickness causes the MOSFET turn-on current to increase from 1.7 to 700 μA/mm, R ON to decrease from 1.13 MΩ•mm to 3.8 kΩ•mm, and breakdown voltage to decrease from 910 to 240 V. Through X-ray photoelectron spectroscopy (XPS), we ascribe this increased turn-on current and reduced breakdown voltage to oxygen vacancies. KEYWORDS: β-Ga 2 O 3 , metal-oxide-semiconductor field-effect transistors (MOSFETs), unintentionally doped (UID) layers, tetraethoxysilane (TEOS), metal−organic chemical vapor deposition, X-ray photoelectron spectroscopy (XPS)
“…These superlative material characteristics permit β-Ga 2 O 3 to be employed for many electrical devices, such as metal–oxide–semiconductor field-effect transistors (MOSFET) [ 6 – 10 ], metal–semiconductor field-effect transistors (MESFET) [ 11 ], and Schottky barrier diodes [ 12 ]. In addition, to increasing conductivity, most devices are grown homoepitaxially and doped by Si-ion implantation forming a shallow donor [ 13 ].…”
Abstractβ-Ga2O3 thin films with both a 45 nm Si-doped conductive epilayer and unintentionally doped epilayer were grown on c-plane sapphire substrate by metalorganic chemical vapor deposition. β-Ga2O3 based metal–oxide–semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 20 nm and 40 nm (it indicated gate depth with 70 nm and 50 nm, respective), respectively, and without said recessing process. The conductivity of β-Ga2O3 epilayers was improved through low in situ doping using a tetraethoxysilane precursor to increase MOSFET forward current density. After recessing, MOSFET operation was transferred from depletion to enhanced mode. In this study, the maximum breakdown voltage of the recessed 40 nm transistor was 770 V. The etching depth of a recessed-gate device demonstrates its influence on device electrical performance.
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