Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature

Liu, Day−Shan; Lin, Chien-Hung; Huang, Bing−Wen; Wu, Chun−Ching

doi:10.1143/jjap.45.3526

Cited by 19 publications

(5 citation statements)

References 26 publications

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“…These results were indicated that the existence of excess ZnO impurities not only decreased the film resistivity, but also promoted the decrement of electron mobility [15,16]. In addition, regardless of the Zn contents, the average transmittance in visible region (390-800 nm) of pure ITO film and all ZITO films possessed an excellent transparency (over 87%).…”

Section: The Effects Of Zn Atomic Concentrationmentioning

confidence: 84%

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

Chen

Hung

Chang

et al. 2011

Journal of Alloys and Compounds

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Section: The Effects Of Zn Atomic Concentrationmentioning

confidence: 84%

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

Chen

Hung

Chang

et al. 2011

Journal of Alloys and Compounds

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“…Binary compounds like doped indium oxide, zinc oxide, and tin oxide are widely used because they present unique electrical and optical properties. Zinc indium tin oxide (ZITO) alloys have been previously studied and improvements in electrical 3,4 and mechanical 5 properties compared to indium tin oxide (ITO) were reported for certain compositions. The objective of the presented experiments was to characterize the electronic structure (i.e., work function and band edge energies) of ZITO thin films in order to assess their suitability for electrode applications.…”

Section: Introductionmentioning

confidence: 99%

The electronic structure of co-sputtered zinc indium tin oxide thin films

Carreras

Gutmann

Antony

et al. 2011

Journal of Applied Physics

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Spin polarization and charge transmission for a waveguide on surface of topological insulator Appl. Phys. Lett. 99, 153104 (2011) Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance Appl. Phys. Lett. 99, 142105 (2011) Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures J. Appl. Phys. 110, 073702 (2011) Electronic states at the interface between indium tin oxide and silicon J. Appl. Phys. 110, 074503 (2011) Improved calculation of vacancy properties in Ge using the Heyd-Scuseria-Ernzerhof range-separated hybrid functional J. Appl. Phys. 110, 063534 (2011) Additional information on J. Appl. Phys. Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses $50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO 2 films.

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“…The detailed deposition conditions of the cosputtered AZO (defined as cosputtered Al-ZnO, hereafter) films are given in Table I. Similar to the reports on the preparation of cosputtered ITO-ZnO and AlN-ZnO films, 31,32) the theoretical Al atomic ratios [Al=ðAl þ ZnÞ at. %] cosputtered into the ZnO films were evaluated to be 5, 7.5, 9, 10, 12.5, and 15 at.…”

Section: Methodsmentioning

confidence: 99%

Properties of Zinc Oxide Films Cosputtered with Aluminum at Room Temperature

Liu

Tsai

Lee

et al. 2008

jjap

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The electrical, structural, and optical properties of ZnO films cosputtered with Al at room temperature using a radio frequency magnetron cosputtering system were systematically investigated. The increase in carrier concentration was initially drastic with increasing cosputtered Al content and gradually alleviative for the cosputtered films behaving as an n-type degenerated semiconductor. The Hall mobility of these degenerated samples was deeply affected by both the crystal grain size and the degree of the growth orientation, becoming a dominant factor for obtaining the film with the lowest resistivity. The shifts of the ZnO(002) diffraction peak of these cosputtered films were affected by the Al3+ substitute for the lattice Zn2+ sites as well as the excess Al content existing in the interstitials. In terms of the associated optical properties, all these cosputtered films exhibited excellent transmittance around visible wavelengths. In the ultraviolet wavelengths, an apparent blue-shift at the absorption edge due to the increase in carrier concentration correlated to the Burstein–Moss shift was also observed from these degenerated cosputtered Al–ZnO films. The depth distribution of the Al impurities was more uniform than a conventional sputtered Al-doped ZnO film at a similar Al doping level. The carrier concentration and Hall mobility of the cosputtered Al–ZnO film were found to be apparently increased due to the more effective activation of the Al–O chemical bonds and less metallic Al and Zn atoms existed in the interstitials analyzed from X-ray photoelectron spectroscopy (XPS) investigations.

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Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature

Cited by 19 publications

References 26 publications

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

The electronic structure of co-sputtered zinc indium tin oxide thin films

Properties of Zinc Oxide Films Cosputtered with Aluminum at Room Temperature

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