Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Kim, D. C.; Seo, Sunae; Ahn, Seung‐Eon; Suh, Dongseok; Lee, M. J.; Park, B.-H.; Yoo, In-Kyeong; Baek, In-Gyu; Kim, H.-J.; Yim, Eun-Soon; Lee, J. E.; Park, S. O.; Kim, H. S.; Chung, U‐In; Moon, Joo-Tae; Ryu, Byung-Il

doi:10.1063/1.2204649

Cited by 512 publications

(206 citation statements)

References 9 publications

(6 reference statements)

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“…On the other hand, the RS in Ni 1+x O is associated to a thermochemical effect, i.e. the formation or destruction of Ni conductive filaments by Joule heating [8] . Interestingly all these mechanisms proposed for RRAM involve local Chemical modifications.…”

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Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

Cario¹,

Vaju²,

Corraze³

et al. 2010

Advanced Materials

133

145

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[ # ] these authors contributes equally to this work Keywords: resistive switching, non-volatile memory, Mott insulator, metal-insulator transitionThe fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably keeping enough electrons in an always smaller cell size will become increasingly difficult [1] . The control of electrical resistance at the nanometer scale therefore requires new concepts, and the ultimate resistance-change device is believed to exploit a purely electronic phase change such as the Mott insulator to insulator transition [ 2 ].Here we show that application of short electric pulses allows to switch back and forth between an initial high-resistance insulating state ("0" state) and a low-resistance "metallic" state ("1" state) in the whole class of Mott Insulator compounds AM 4 X 8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se). We found that electric fields as low as 2 kV/cm induce an electronic phase change in these compounds from a Mott insulating state to a metallic-like state. Our results suggest that this transition belongs to a new class of resistive switching and might be explained by recent theoretical works predicting that an insulator to metal transition can be achieved by a simple electric field in a Mott Insulator [3,4,5] . This new type of resistive switching has potential to build up a new class of Resistive Random Access Memory (RRAM) with fast writing/erasing times (50 ns to 10 µs) and resistance ratios R/R of the order of 25% at room temperature.

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Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

Cario¹,

Vaju²,

Corraze³

et al. 2010

Advanced Materials

133

145

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“…Nickel oxide is a Mott-type insulator that exhibits electroresistive switching properties [9,11], often interpreted with a filamentary conduction model [20]. Our previous results on TMR single junctions in Ni/NiO/Co nanowires showed that filamentary conduction indeed occurred in those very small junctions [15].…”

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confidence: 99%

“…metal-insulatormetal (M/I/M) structures involving strongly correlated electronic (SCEG) systems. A filamentary conductor several nanometers in diameter [8,10,11] separated by thin interfacial layers [7,12,13] from the metallic electrodes is generally considered as the elemental source of resistance switching. There is a growing consensus that such a electro-resistive effect is related to the self-doping capability of transition metal oxides, which is promoted by local modulation of the oxygen content [8].…”

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confidence: 99%

“…A model of currentinduced magnetization reversal mechanism [22] is unlikely to occur at the limited current densities we use, and cannot explain the data, since the magnetic-field-induced change has a sign and amplitude not corresponding to the voltage-induced change. Joule heating triggering the resistance switching was considered by several authors [4,11,23]. We took advantage of the sporadic occurrence of telegraph noise in single junction devices under significant potential bias [14] to perform local thermometry measurements [24].…”

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Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

Sokolov

Sabirianov

et al. 2009

J. Phys.: Condens. Matter

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“…The resistance switching of binary oxides such as NiO is mainly of the unipolar type that does not depend on the voltage polarity. [10][11][12][13][14][15][16] Recent works reported that the "filamentredox-model" (in short, the "filament model") is influential in unipolar resistance switching. 4,[17][18][19][20][21] In the first process of this ReRAM operation, a relatively high voltage applied to the initial ReRAM film in the high resistance state (HRS, off-state) changes it to the low resistance state (LRS, onstate).…”

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confidence: 99%

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Fujii

Arita

Hamada

et al. 2013

Journal of Applied Physics

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We used thermal oxidization at various temperatures to prepare NiO/Pr-Ir for use in resistance random access memory (ReRAM) samples. In-situ transmission electron microscopy (TEM) was used to investigate the forming process of these ReRAM samples, where a needle-shaped top electrode of Pt-Ir was attached to the NiO/Pt-Ir ReRAM layer. The forming voltage initializing the NiO layer increased at an oxidization temperature of between 200 and 400 C. In this process, conductive bridges, which are thought to be conductive filaments of a ReRAM, appeared, and their sizes showed a correlation with the injection power. It was as small as about 300 nm 2 when the injection power was 10 À6 W. Energy dispersive X-ray spectroscopy was used to analyze the bridge, and it was experimentally confirmed that the oxygen content of the bridge was lower than that of the initial NiO layer. However, these bridges in the low resistance state did not show further ReRAM switching to the high resistance state inside of a TEM instrument. To check the reason of this result, we investigated samples outside of the TEM instrument, which had similar geometry to that of TEM specimens. They showed the ReRAM switching in air ambient but not in vacuum. Combining these results inside and outside of the TEM instrument, it can be concluded that the existence of oxygen around the conductive filament plays an important role. This supports the filament redox model on the ReRAM operation. V C 2013 American Institute of Physics.

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Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Cited by 512 publications

References 9 publications

Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

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