Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

Sokolov, Andrei; Sabirianov, Renat; Sabirianov, Ildar; Doudin, B.

doi:10.1088/0953-8984/21/48/485303

Cited by 9 publications

(9 citation statements)

References 26 publications

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“…[9][10][11][12][13][14] We showed, for instance, that MgO tunnel barriers with a few atomic layers of chromium 14 or vanadium 15 at the MgO interface exhibited reproducible switching effects in Fe/Cr/MgO/Fe or Fe/V/MgO/Fe systems. This was attributed to the creation of oxygen vacancies in MgO at the interface with these "dusting" layers.…”

Section: Introductionmentioning

confidence: 95%

Random barrier double-well model for resistive switching in tunnel barriers

Bertin

Halley

Henry

et al. 2011

Journal of Applied Physics

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18 pages, 5 figuresInternational audienceThe resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of the barrier and leads to the resistive switching effects. A double-well model for trapped electrons in MgO is introduced to theoretically describe this phenomenon. Including the statistical distribution of potential barrier heights for these traps leads to a power-law dependence of the resistance as a function of time, under a constant bias voltage. This model also predicts a power-law relation of the hysteresis as a function of the voltage sweep frequency. Experimental transport results strongly support this model and in particular confirm the expected power laws dependencies of resistance. They moreover indicate that the exponent of these power laws varies with temperature as theoretically predicted

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Section: Introductionmentioning

confidence: 95%

Random barrier double-well model for resistive switching in tunnel barriers

Bertin

Halley

Henry

et al. 2011

Journal of Applied Physics

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“…The shape of the MR curve is also remarkable, as it is reminiscent of a bi-stable magnetic state system. 34,35 Before a magnetic field is applied, the resistance for these contacts is of the order of 100 kΩ. However, the low resistance state under applied fields is of 100 Ω to 1 kΩ.…”

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confidence: 99%

Unexpected Magnetic Properties of Gas-Stabilized Platinum Nanostructures in the Tunneling Regime

et al. 2014

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International audienceNanostructured materials often have properties widely different from bulk, imposed by quantum limits to a physical property of the material. This includes, for example, superparamagnetism and quantized conductance, but original properties such as magnetoresistance in nonmagnetic molecular structures may also emerge. In this Letter, we report on the atomic manipulation of platinum nanocontacts in order to induce magnetoresistance. Platinum is a paramagnetic 5d metal, but atomic chains of this material have been predicted to be magnetically ordered with a large anisotropy. Remarkably, we find that a gas flow stabilizes Pt atomic structures in a break junction experiment, where we observe extraordinary resistance changes over 30 000% in a temperature range up to 77 K. Simulations indicate that this behavior may stem from a previously unknown magnetically ordered, low-energy state in platinum oxide atomic chains. This is supported by measurements in Pt/ PtOx superlattices revealing the presence of a ferromagnetic moment. These properties open new paths of research for atomic scale " dirty " magnetic sensors and quantum devices

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“…Rich electrical, thermal, magnetic, and optical effects are therefore presented. Typical physical/chemical effects accompanied in resistive switching processes and in HRS/LRS states include electrochemical/thermochemical reactions [ 15 – 27 ], metal-insulator transition [ 28 , 29 ], magnetic modulation [ 30 – 47 ], etc. In this regard, the RRAM device can serve as a rich platform for studying the multiple physical/chemical effects.…”

Section: Reviewmentioning

confidence: 99%

Conductance Quantization in Resistive Random Access Memory

et al. 2015

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The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

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Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

Cited by 9 publications

References 26 publications

Random barrier double-well model for resistive switching in tunnel barriers

Random barrier double-well model for resistive switching in tunnel barriers

Unexpected Magnetic Properties of Gas-Stabilized Platinum Nanostructures in the Tunneling Regime

Conductance Quantization in Resistive Random Access Memory

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