2010
DOI: 10.1016/j.mejo.2009.10.006
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Electrical modeling and characterization of through-silicon vias (TSVs) for 3-D integrated circuits

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Cited by 75 publications
(19 citation statements)
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“…We performed place---and---route, using Cadence Encounter, to have precise power and area estimations. Depending on the technology and manufacturing process, the pitches of TSVs can range from 1µμm to 10µμm square [37]. In this work, the pad size for TSVs is assumed to be 5µμm 2 with pitch of around 8µμm 2 .…”
Section: Application Traffic Profilementioning
confidence: 99%
“…We performed place---and---route, using Cadence Encounter, to have precise power and area estimations. Depending on the technology and manufacturing process, the pitches of TSVs can range from 1µμm to 10µμm square [37]. In this work, the pad size for TSVs is assumed to be 5µμm 2 with pitch of around 8µμm 2 .…”
Section: Application Traffic Profilementioning
confidence: 99%
“…Depending on the technology and manufacturing process, the pitches of TSVs can range from 1μm to 10μm square [36]. In this work, the pad size for TSVs is assumed to be 5μm square with pitch of around 8µm.…”
Section: Hardware Overheadmentioning
confidence: 99%
“…Vias are interconnects commonly found on multilayer printed or integrated circuits [13][14]. Often, they provide some path to ground or to other device via some RDL (Re-Distribution Layer).…”
Section: Via Electromagnetic Behaviourmentioning
confidence: 99%