Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation

Abstract

International audience— This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an NMOS transistor in triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. This evaluation compares the triple-well structure to a classical Psubstrate-only structure of an NMOS transistor. It reveals the possible activation change of the bipolar transistors. Based on these experimental measurements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation

Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation

“…9) showed a very good correlation. This confirms the good results already obtained on single test transistors [11], [12], [13] and validates the relevance of our simulation tool for more complex logic gates.…”

“…We have already introduced electrical models of a triple-well structure in [11], [12] and [13], where the parasitic vertical PNP and NPN bipolar transistors were modeled as voltage-controlled current sources [14]. Parasitic bipolar transistor models can be generalized by (6):…”

“…Firstly, the input of the inverter was biased at 0 V. Then, the PMOS is used in their ON state, the NMOS in their OFF state consequently the output = 1.2 V. As shown and modeled in [12] and [13], for laser power below 50 mW, the laser induced photocurrents on the PN junctions. There are mainly 6 PN junctions (shown in green in Fig.…”

SEU sensitivity and modeling using pico-second pulsed laser stimulation of a D Flip-Flop in 40 nm CMOS technology

“…In the following, laser-induced SEEs are described. A laser-induced transient current is then called a 'photocurrent' [8][9][10][11][12][13][14][15][16].…”

Influence of triple-well technology on laser fault injection and laser sensor efficiency

“…For the purpose of analyzing the BBICS coverage, we performed a set of experiments on stand-alone structures to measure the currents involved in SEE generation. These measurements were carried out on NMOS and PMOS transistors for both dual-well and triple-well [29], [30] and [31]. Based on these measurements, we created SPICE simulation models which make it possible to simulate the photocurrent generated on the test structure.…”