Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures

MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices

“…For devices containing C c MQDs, in the lowvoltage region, the plot of ln (I) vs. ln (V) with a slope of 1.1 was fitted to a straight line (Figure 5b), indicative of an Ohmic conduction governed the electrical conduction in the range of 0-1 V (step A in Figure 5a). [6] For the subsequent positive sweep from 1-1.6 V, a line relation was observed in the plot of ln (I/V) vs. V 1/2 (Figure 5c), which is a typical shallow trapassociated Poole-Frenkel emission carrier transport process (step B in Figure 5a). [11] On the basis of the fitting results and discussion, we proposed the band diagrams for resistive switching behavior.…”

“…To reveal the carrier conduction and switching mechanisms of both WORM and Flash memory devices, the charge transport behaviors in both OFF and ON states were investigated by log I–log V plots during the positive sweep region in Figure a,e. For devices containing C c MQDs, in the low‐voltage region, the plot of ln ( I ) vs. ln ( V ) with a slope of 1.1 was fitted to a straight line (Figure b), indicative of an Ohmic conduction governed the electrical conduction in the range of 0–1 V (step A in Figure a) . For the subsequent positive sweep from 1–1.6 V, a line relation was observed in the plot of ln ( I / V ) vs. V 1/2 (Figure c), which is a typical shallow trap‐associated Poole–Frenkel emission carrier transport process (step B in Figure a) .…”

“…Emerging polymer memory devices with resistive switching are promising alternatives to existing conventional random access memory technology due to their ability of information storage and process . An effective strategy to realize resistive switching for memory effect is organic‐inorganic hybrid design in polymer device, with the merits of tailorable components, tunable properties, solution process and low‐cost manufacturing . In the organic–inorganic hybrid systems, insulating or semiconducting polymers are widely used as active matrix, low dimensional inorganic materials including zero dimensional (0D) nanodots, 1D nanotubes and 2D nanosheets are introduced into polymer matrix as charge trapping to trigger the resistive switching.…”

Resistive Switching Behaviour in PMMA/Al:ZnO Composite Films

“…The memory phenomenon in nanoparticle-polymer composites which is essentially based on two distinct electrical states commonly known as the ON and OFF states [1][2][3][4][5][6][7][8][9][10][11], is attracting immense attention. The excitement in these polymer nanocomposites stems from the zeal to understand the conduction mechanism and more importantly the possibility of developing improved memory systems as compared to the existing ones.…”