Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering

Park, Hyeongsik; Jang, Kyungsoo; Kumar, K. Rajeev; Ahn, Shihyun; Cho, Jaehyun; Jang, Jae Hoon; Ahn, Kyung-Jun; Yeom, Jeonghoon; Kim, Dong-Seok; Yi, Junsin

doi:10.1016/j.tsf.2011.04.084

Cited by 10 publications

(3 citation statements)

References 21 publications

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“…The doped ZnO thin films have low resistivity and are transparent in the visible region. There are several reports on ZnO nanostructured thin films doped with different elements such as Al, Ga, In, Ti, Li, P, N, Ni, , and Co [10][11][12][13][14][15]. Aluminum zinc oxide (AZO) thin film immobilized on glass substrates has been extensively studied because of its excellent electro-optical properties.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of titanium zinc oxide (TZO) sol–gel derived nanostructured thin film and investigation of its optical and electrical properties

Eshaghi

Hakimi

Zali

2015

Optik

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Section: Introductionmentioning

confidence: 99%

Fabrication of titanium zinc oxide (TZO) sol–gel derived nanostructured thin film and investigation of its optical and electrical properties

Eshaghi

Hakimi

Zali

2015

Optik

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“…According to the literature, the band gaps of ZnO and Al 2 O 3 films are reported to be approximately 3.28 and 9.9 eV, respectively . Thickness‐induced blue shifts in the optical band gaps of Al–Zn–O films have also been reported, partly attributed to an increase in the atomic percent of the aluminum and oxygen contents . Furthermore, it has been observed that the optical band gap of ZnO films shifts toward lower wavelengths as the films are alloyed with Al 2 O 3 …”

Section: Resultsmentioning

confidence: 99%

Highly transparent, UV‐B protective Al–Zn–O films with potential application in greenhouse screen systems

Mehr

Hantehzadeh

Darabi

2019

Int J Applied Ceramic Tech

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Extremely thin, Al–Zn–O composite films (21 ± 6 nm) are deposited on fused silica substrates under various percentages of oxygen in the oxygen/argon gas mixture (3%, 4.5%, 6%, and 7.5%). The films are prepared by a cylindrical DC magnetron sputtering system, utilizing a single compound target. The effects of the oxygen percentage on the compositional, morphological, and optical properties of the films are investigated by energy‐dispersive X‐ray spectroscopy, scanning electron microscopy, UV‐visible spectrophotometry, and atomic force microscopy. The chemical composition of the films is Al1 Zn1+X O with 0.2 < X < 1. The average visible transmittance of 93.6% with a high level of uniformity is obtained when the sputtering deposition performs under the oxygen percentage of 6%. It is found that the optical band gap of the films can be tailored toward higher energy by increasing oxygen percentage; however, the adjustable range is not so significant. The results offer cost‐efficient films with high, uniform transmittance in the visible region and with an ability to attenuate more than 10% of incident UV‐B radiation (280‐315 nm). This type of films can potentially be included in greenhouse screen systems to effectively protect the plants from the elevated UV‐B radiation without altering natural conditions.

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“…% Al 2 O 3 might have a carrier concentration of 10 19 -10 21 cm À3 . 20,35,36) Such highly doped AZO is a degenerate semiconductor and it might form an n þ -AZO/ p-Cu 2 O heterojunction similar to a Schottky barrier contact. 22) A recent study of heterojunction solar cells has shown that conversion efficiency was markedly enhanced by inserting a thin undoped ZnO layer between AZO and Cu 2 O.…”

Section: Resultsmentioning

confidence: 99%

Oxide Solar Cells Fabricated Using Zinc Oxide and Plasma-Oxidized Cuprous Oxide

Chan

Jou

2012

Jpn. J. Appl. Phys.

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Oxide heterojunction solar cells composed of an n-type Al-doped ZnO (AZO) thin film on the surfaces of p-type Cu 2 O films were fabricated. The Cu 2 O films of about 0.34 to 1.67 m thickness were grown by partial oxidation of a Cu sheet using microwave plasma. The AZO film of 400 nm thickness was deposited by magnetron sputtering. Energy conversion efficiencies of 0.12 to 0.30% were obtained in AZO/Cu 2 O cells under AM1.5 solar illumination. #

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Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering

Cited by 10 publications

References 21 publications

Fabrication of titanium zinc oxide (TZO) sol–gel derived nanostructured thin film and investigation of its optical and electrical properties

Fabrication of titanium zinc oxide (TZO) sol–gel derived nanostructured thin film and investigation of its optical and electrical properties

Highly transparent, UV‐B protective Al–Zn–O films with potential application in greenhouse screen systems

Oxide Solar Cells Fabricated Using Zinc Oxide and Plasma-Oxidized Cuprous Oxide

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