Fabrication of titanium zinc oxide (TZO) sol–gel derived nanostructured thin film and investigation of its optical and electrical properties

Eshaghi, Akbar; Hakimi, Mohammad Javad; Zali, A.

doi:10.1016/j.ijleo.2015.09.243

Cited by 10 publications

(6 citation statements)

References 20 publications

(23 reference statements)

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“…It is clear that the optical band gap increases from 1.56 to 1.85 eV with the increasing concentration of the Ti dopant. This is consistent with previous research work. , The optical band gap broadening is primarily attributed to the Burstein–Moss effect.…”

Section: Resultssupporting

confidence: 93%

“…Because of the filling of the electronic states near the bottom of the conduction bands, the Fermi level was lifted into the conduction band when the thin films were doped with Ti, which leads to the energy band broadening. The increase of the band gap because of the Burstein–Moss effect can be written as Δ E g BM where n is the carrier concentration and m VC * is the effective mass. The equation shows that the increase of the carrier concentration results in an increase in the photonic band gap, and the photonic band gap depends positively on n 2/3 .…”

Section: Resultsmentioning

confidence: 99%

“…This is consistent with previous research work. 33,34 The optical band gap broadening is primarily attributed to the Burstein−Moss effect. Because of the filling of the electronic states near the bottom of the conduction bands, the Fermi level was lifted into the conduction band when the thin films were doped with Ti, which leads to the energy band broadening.…”

Section: Resultsmentioning

confidence: 99%

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Structural and Optical Properties of Ti-Doped InTe Thin Films

Yuan

Liu

et al. 2018

J. Phys. Chem. C

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Thin films of Ti-doped indium telluride (InTe) chalcogenide were prepared by the magnetron co-sputtering method. The optical and structural properties were investigated by various tools after the thermal treatment. All annealed films were highly polycrystalline with (211) as the preferred orientation. Raman spectra results confirm that the structure of the InTe films can be adjusted by Ti dopants. The transmittance is high in the near-infrared region. The refractive index (n) and extinction coefficient (k) of the films were measured by a Spectroscopic Ellipsometer. The optical band gaps increase from 1.56 to 1.85 eV with the increasing concentration of Ti. The third-order nonlinear optical properties of the thin films were investigated by applying the open-aperture Z-scan method with femtosecond laser excitation at 800 nm wavelength. The results show reverse saturation absorptions which show the potential value of the films in optical limiting applications. The nonlinear absorption coefficient was calculated using a model developed by Sheik-Behae. The femtosecond pump–probe technique was employed to measure the transient reflectivity of the samples. The results indicate that the lifetime of the carrier can be adjusted by the Ti dopant because of the carrier trapping effect.

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Structural and Optical Properties of Ti-Doped InTe Thin Films

Yuan

Liu

et al. 2018

J. Phys. Chem. C

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“…Biomimetics 2023, 8, x FOR PEER REVIEW 8 of 18 biogenic chitosan led to a decrease in the optical band gap of the CS/Ni-doped ZnO nanocomposite. Furthermore, the comparable ionic radius of Ni 2+ also reduced the band energy, which is generally attributed to the Burstein-Moss shift and resulted in filled electronic states near the bottom of the conduction bands [52,53]. This may be due to the synergistic effect of organic and inorganic material increasing the wavelength.…”

Section: Uv-vis-nir Analysismentioning

confidence: 97%

“…Furthermore, the comparable ionic radius of Ni 2+ also reduced the band energy, which is generally attributed to the Burstein-Moss shift and resulted in filled electronic states near the bottom of the conduction bands [52,53].…”

Section: Uv-vis-nir Analysismentioning

confidence: 99%

Advancements in Composite Materials and Their Expanding Role in Biomedical Applications

Jeyachandran,

Chellapandian,

Ali

2023

Biomimetics

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The synthesis of a Ni-doped ZnO nanocomposite incorporating chitosan (CS/Ni-doped ZnO) was achieved via a precipitation method, followed by annealing at 250 °C. This study comprehensively examined the nanocomposite’s structural, functional, morphological, and porosity properties using various analytical techniques, including X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), high-resolution scanning electron microscopy (HR-SEM), transmission electron microscopy (TEM), and Brunauer–Emmett–Teller (BET) analysis. The presence of chitosan (CS) and nickel (Ni) within the nanocomposite, along with their influence on reducing the band gap of ZnO particles and enhancing the generation of electron-hole pairs, was confirmed using UV-visible near-infrared spectroscopy (UV-vis-NIR). The electrochemical properties of the CS/Ni-doped ZnO nanocomposite were investigated via electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) by utilizing a phosphate buffer solution with a pH of 6, which closely resembled the typical pH of bacterial cell walls. Finally, the prepared CS/Ni-doped ZnO nanocomposite was evaluated for its antibacterial and anticancer activities. The results demonstrated the highest inhibition of bacterial growth in P. vulgaris, whereas the lowest inhibition was found in S. aureus across various concentrations, thus highlighting its potential in antimicrobial applications. The cytotoxicity of CS/Ni-doped ZnO nanocomposites demonstrated remarkable effects with a half-maximum inhibitory concentration of approximately 80 ± 0.23 µg mL−1 against MCF-7 breast cancer cell lines, following a dose-dependent manner.

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