Electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards

Cresswell, Michael W.; Bonevich, John E.; Allen, Richard A.; Guillaume, N.M.P.; Giannuzzi, Lucille A.; Everist, Sarah C.; Murabito, Christine E.; Shea, Patrick J.; Linholm, L.W.

doi:10.1109/66.964322

Cited by 1 publication

(1 citation statement)

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“…Linewidth standards serve as comparison standards for measurements of the smallest width features (or critical dimensions) in IC. Some governmental standard organizations, such as National Institute of Standards and Technology (NIST) in the US, National Physical Laboratory (NPL) in the UK and Physikalisch-Technische Bundesanstalt (PTB) in Germany, have made available standards that are traceable to SI units, known as standard reference materials (SRMs) [2][3][4][5][6]. But the availability of these standards does not always follow the pace of the development of device manufacturing technology.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of sub-45 nm multiple linewidth samples

Zhao

Jiang

Jing

et al. 2007

Meas. Sci. Technol.

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A method of fabricating nanometre scale multiple linewidth standards based on multilayer thin film deposition techniques is presented. Three layers of chromium (Cr) thin films and three layers of silicon nitride (Si3N4) thin films were alternately deposited on a silicon substrate in the radio frequency (RF) magnetron sputtering system and the low-temperature plasma enhanced chemical vapour deposition (PECVD) system. The deposition thicknesses of the Cr thin films are equal to the desired linewidths. The silicon substrate was then cut into small pieces, and the cross-section of each piece was metallographically polished. Perpendicular to the cross-section Si3N4 was etched with reactive ion etching (RIE) and nanometre scale multiple linewidth samples with nominal linewidths of 20 nm, 25 nm and 35 nm were fabricated. The fabricated samples were characterized with a scanning electron microscope (SEM). The line edge roughness (LER) and the linewidth roughness (LWR) of the lines of the fabricated samples were evaluated by an offline image analysis algorithm. The lines of the fabricated samples have uniform attributes and good linearity over hundreds of microns. The results show that the presented method is a promising method for the fabrication of nanometre scale multiple linewidth standards.

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