2003
DOI: 10.1063/1.1632028
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Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor

Abstract: Room temperature structural, morphological, and enhanced ferroelectromagnetic properties of xBa0.7Ca0.3TiO3−(1−x)BaFe0.2Ti0.8O3 multiferroic composites Effect of electric field on magneto-transport properties in La2/3(Ca0.6Ba0.4)1/3MnO3/Pb(Zr0.52Ti0.48)O3 laminated composite

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Cited by 80 publications
(57 citation statements)
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“…13 If the ferroelectric field effect plays a dominant role in influencing the resistivity, one would observe a rectanglelike -E hysteresis loop with the resistivity change exhibiting opposite signs for opposite directions of applied electric field, as previously observed in the La 1−x Ba x MnO 3 ͑x = 0.1, 0.15͒ / Pb͑Zr 0.2 Ti 0.8 ͒O 3 structures. 19 Thus, the butterflylike -E hysteresis loop gives further evidence that the strain induced by poling plays a dominant role in influencing the transport properties of the LBMO film while the ferroelectric field effect is minor and negligible. Measurements of piezoresponse force microscopy ͑PFM͒ on a PMN-PT single crystal using a scanning probe microscope operated in the piezoforce mode showed that the amplitude of the PFM signal ͑which is in proportional to the induced out-of-plane strain͒ also exhibits butterflylike hysteresis loop ͓inset ͑a͒ of Fig.…”
Section: Resultsmentioning
confidence: 99%
“…13 If the ferroelectric field effect plays a dominant role in influencing the resistivity, one would observe a rectanglelike -E hysteresis loop with the resistivity change exhibiting opposite signs for opposite directions of applied electric field, as previously observed in the La 1−x Ba x MnO 3 ͑x = 0.1, 0.15͒ / Pb͑Zr 0.2 Ti 0.8 ͒O 3 structures. 19 Thus, the butterflylike -E hysteresis loop gives further evidence that the strain induced by poling plays a dominant role in influencing the transport properties of the LBMO film while the ferroelectric field effect is minor and negligible. Measurements of piezoresponse force microscopy ͑PFM͒ on a PMN-PT single crystal using a scanning probe microscope operated in the piezoforce mode showed that the amplitude of the PFM signal ͑which is in proportional to the induced out-of-plane strain͒ also exhibits butterflylike hysteresis loop ͓inset ͑a͒ of Fig.…”
Section: Resultsmentioning
confidence: 99%
“…There have been several attempts in this research direction. In particular, field effect devices with "all perovskite structures" were fabricated with manganites as the semiconducting channel and dielectrics/ferroelectrics as the gate oxide [24,27,28,[37][38][39][40][41]. In the ferroelectric field effect devices, two discrete polarization states of the ferroelectric layers are used to achieve nonvolatile modulation of the channel resistance.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the ferroelectric field effect in the LSCO=PMN-PT system is negligibly small at room temperature. In a free electron model, one could obtain the relationship that Dq=q ¼ ÀDn=n 34,35 Namely, if only the ferroelectric field effect is considered, the resistivity of the LSCO film should increase by 0.42% when a 450 V (or 10 kV=cm) gate voltage is applied to the PMN-PT substrate, because of the depletion of holes in the LSCO film. 36 As seen in Fig.…”
Section: Resultsmentioning
confidence: 99%