Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor

Kanki, Teruo; Park, Young‐Geun; Tanaka, Hidekazu; Kawai, Tomoji

doi:10.1063/1.1632028

Cited by 80 publications

(57 citation statements)

References 20 publications

(15 reference statements)

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“…13 If the ferroelectric field effect plays a dominant role in influencing the resistivity, one would observe a rectanglelike -E hysteresis loop with the resistivity change exhibiting opposite signs for opposite directions of applied electric field, as previously observed in the La 1−x Ba x MnO 3 ͑x = 0.1, 0.15͒ / Pb͑Zr 0.2 Ti 0.8 ͒O 3 structures. 19 Thus, the butterflylike -E hysteresis loop gives further evidence that the strain induced by poling plays a dominant role in influencing the transport properties of the LBMO film while the ferroelectric field effect is minor and negligible. Measurements of piezoresponse force microscopy ͑PFM͒ on a PMN-PT single crystal using a scanning probe microscope operated in the piezoforce mode showed that the amplitude of the PFM signal ͑which is in proportional to the induced out-of-plane strain͒ also exhibits butterflylike hysteresis loop ͓inset ͑a͒ of Fig.…”

Section: Resultsmentioning

confidence: 99%

Effects of ferroelectric-poling-induced strain on the transport and magnetic properties of La7/8Ba1/8MnO3 thin films

Zheng

Wang

Chan

et al. 2010

Journal of Applied Physics

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We have investigated the effects of the strain induced by ferroelectric poling on the transport and magnetic properties of La 7/8 Ba 1/8 MnO 3 ͑LBMO͒ thin films epitaxially grown on ferroelectric 0.67Pb͑Mg 1/3 Nb 2/3 ͒O 3 -0.33PbTiO 3 ͑PMN-PT͒ single-crystal substrates. The ferroelectric poling reduces the in-plane tensile strain of the film, giving rise to a decrease in the resistivity and an increase in the magnetization, Curie temperature, and magnetoresistance of the LBMO film. These strain effects are explained within the framework of coexisting phases whose volume fractions are modified as a result of the reduction in the tetragonal distortion of MnO 6 octahedra induced by ferroelectric poling. An investigation of the effects of polarization reversal on the transport properties of the LBMO film indicates that the ferroelectric-poling-induced strain effects dominate over the ferroelectric field effects in the LBMO/PMN-PT structure.

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Section: Resultsmentioning

confidence: 99%

Effects of ferroelectric-poling-induced strain on the transport and magnetic properties of La7/8Ba1/8MnO3 thin films

Zheng

Wang

Chan

et al. 2010

Journal of Applied Physics

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“…There have been several attempts in this research direction. In particular, field effect devices with "all perovskite structures" were fabricated with manganites as the semiconducting channel and dielectrics/ferroelectrics as the gate oxide [24,27,28,[37][38][39][40][41]. In the ferroelectric field effect devices, two discrete polarization states of the ferroelectric layers are used to achieve nonvolatile modulation of the channel resistance.…”

Section: Introductionmentioning

confidence: 99%

Electric field tuning of phase separation in manganite thin films

Lourembam

Ding

et al. 2014

Phys. Rev. B

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In this paper, we investigate the electric field effect on epitaxial Pr 0.65 (Ca 0.75 Sr 0.25 ) 0.35 MnO 3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

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“…Therefore, the ferroelectric field effect in the LSCO=PMN-PT system is negligibly small at room temperature. In a free electron model, one could obtain the relationship that Dq=q ¼ ÀDn=n 34,35 Namely, if only the ferroelectric field effect is considered, the resistivity of the LSCO film should increase by 0.42% when a 450 V (or 10 kV=cm) gate voltage is applied to the PMN-PT substrate, because of the depletion of holes in the LSCO film. 36 As seen in Fig.…”

Section: Resultsmentioning

confidence: 99%

Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

Zhu¹,

Wang²,

Zhao³

et al. 2012

Journal of Applied Physics

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Tensiled La0.5Sr0.5CoO3 (LSCO) thin films were epitaxially grown on piezoelectric 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. Due to the epitaxial nature of the interface, the lattice strain induced by ferroelectric poling or the converse piezoelectric effect in the PMN-PT substrate is effectively transferred to the LSCO film and thus reduces the tensile strain of the film, giving rise to a decrease in the resistivity of the LSCO film. We discuss these strain effects within the framework of the spin state transition of Co3+ ions and modification of the electronic bandwidth that is relevant to the induced strain. By simultaneously measuring the strain and the resistivity, quantitative relationship between the resistivity and the strain was established for the LSCO film. Both theoretical calculation and experimental results demonstrate that the ferroelectric field effect at room temperature in the LSCO/PMN-PT field-effect transistor is minor and could be neglected. Nevertheless, with decreasing temperature, the ferroelectric field effect competes with the strain effect and plays a more and more important role in influencing the electronic transport properties of the LSCO film, which we interpreted as due to the localization of charge carriers at low temperature.

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Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor

Abstract: Room temperature structural, morphological, and enhanced ferroelectromagnetic properties of xBa0.7Ca0.3TiO3−(1−x)BaFe0.2Ti0.8O3 multiferroic composites Effect of electric field on magneto-transport properties in La2/3(Ca0.6Ba0.4)1/3MnO3/Pb(Zr0.52Ti0.48)O3 laminated composite

Cited by 80 publications

References 20 publications

Effects of ferroelectric-poling-induced strain on the transport and magnetic properties of La7/8Ba1/8MnO3 thin films

Effects of ferroelectric-poling-induced strain on the transport and magnetic properties of La7/8Ba1/8MnO3 thin films

Electric field tuning of phase separation in manganite thin films

Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

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