Electrical detection of spin transport in lateral ferromagnet–semiconductor devices

Lou, Xudong; Adelmann, Christoph; Crooker, S. A.; Garlid, E. S.; Zhang, Jianjie; Reddy, K. Sai Madhukar; Flexner, Soren; Palmstrøm, C. J.; Crowell, P. A.

doi:10.1038/nphys543

Cited by 786 publications

(754 citation statements)

References 34 publications

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“…In the Datta-Das device, the spinpolarized current which flows in the semiconductor channel, often supposed as a 2-dimensional electron gas (2DEG), is manipulated by electrostatic gate-action, hence providing electrical control of the source-drain current in addition to that provided by the relative alignment of the ferromagnetic contacts. To this end, imaging of the injected spin-polarization from Fe into n-GaAs has been performed in a lateral geometry by Crooker et al 11 and in a cross-sectional geometry by Kotissek et al 12 , whilst Lou et al 13 and Lou et al 14 have demonstrated all-electrical measurements of spin-injection, -transport and -detection in a single Fe/GaAs(001) device. Garlid et al 15 have also used Fe/InGaAs(001) contacts to measure the transverse spin-current generated via the spin-Hall effect.…”

Section: Introductionmentioning

confidence: 99%

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Hindmarch

2011

SPIN

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Interfaces between dissimilar materials present a wide range of fascinating physical phenomena. When a nanoscale thin-film of a ferromagnetic metal is deposited in intimate contact with a compound semiconductor, the properties of the interface exhibit a wealth of novel behavior, having immense potential for technological application, and being of great interest from the perspective of fundamental physics. This article presents a review of recent advances in the field of interface magnetism in (001)-oriented ferromagnetic metal/III–V compound semiconductor hybrid structures. Until relatively recently, the majority of research in this area continued to concentrate almost exclusively on the prototypical epitaxial Fe / GaAs (001) system: now, a significant proportion of work has branched out from this theme, including ferromagnetic metal alloys, and other III–V compound semiconductors. After a general overview of the topic, and a review of the more recent literature, we discuss recent results where advances have been made in our understanding of the physics underpinning magnetic anisotropy in these systems: tailoring the terms contributing to the angular-dependent free-energy density by employing novel fabrication methods and ferromagnetic metal electrodes.

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Section: Introductionmentioning

confidence: 99%

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Hindmarch

2011

SPIN

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“…It is important to note that electronic spin transport in bulk semiconducting systems at high temperatures is very rare. For instance, spin transport in GaAs-based spin valves is observable only up to 70 K 41 . Similarly, spin transport in Si-based spin valves in a non-local geometry was observable only at temperatures below 150K 33 .…”

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confidence: 99%

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

et al. 2017

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Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin 1 . While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors 2 . The recent emergence of 2D semiconductors could help overcome this basic challenge. In this letter we report the first important step towards making 2D semiconductor spin devices. We have fabricated a spin valve based on ultra-thin (~ 5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material which supports all electrical spin injection, transport, precession and detection up to room temperature (RT). Inserting a few layers of boron nitride between the ferromagnetic electrodes and bP alleviates the notorious conductivity mismatch problem and allows efficient electrical spin injection into an n-type bP. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 µm. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that Elliott-Yafet spin relaxation mechanism is dominant. We also demonstrate that spin transport in ultra-thin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect. 2 Electron spin is an important degree of freedom which can complement or even replace charge in information storage and logic devices 3 . For spin-based electronics, it is essential to have materials with long spin relaxation times at RT 1 . With respect to the material selection, semiconductors in particular offer new opportunities that are unfeasible in metal-based spintronics devices. These include doping by the electric field effect and gate controlled amplification/switching actions 4 . The boom of semiconductor spintronics started with the demonstration of the electrical spin injection into GaAs by R. Fiederling et al., also later by H.Ohno et al. 5,6 . I. Appelbaum and his colleagues further fostered this by adding silicon into the spintronics materials family 7 . More recently 2D materials such as graphene have captured the interest of engineers and scientists on the grounds of their high electronic mobility and the simultaneous ability to tune their charge carrier concentrations by the electric field effect 8 .Graphene has already been investigated very extensively in the spintronics community since the first unequivocal demonstration of RT spin injection by N. Tombros et al., 1,9 . While the first devices showed spin lifetimes of only 0.1 ns 9 , the new generation of graphene devices that have surfaces within the last year show remarkable spin lifetimes of ~ 10 ns, making graphene suitable for spin communication channels 10 .Conversely, the zero-band gap nature of graphene does not al...

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“…[1][2][3][4] For improving the Spin-field effect transistor (FET) characteristics, high spin injection efficiency and strong spin orbit (SO) interactions are desirable. So far a number of spin injection and detection in ferromagnetic metal/semiconductor hybrid structures have been examined in various methods, such as circular polarization detection from spin light emitting diode [5][6] , electrical spin accumulation detection in nonlocal geometry [7][8][9] and so on. Among them, nonlocal spin valve measurement has been widely used for electrical spin injection and detection measurements which is free from the influence of anisotropic magnetic resistance (AMR) and local Hall effect.…”

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confidence: 99%

Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier

Ishikura

Liefeith

Cui

et al. 2014

Appl. Phys. Express

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We have investigated electrical spin injection from Ni 81 Fe 19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both nonlocal and local spin valve set-ups and the spin diffusion length and spin injection efficiency were analyzed. The spin diffusion length was estimated to be 1.6 μm in nonlocal set-up at 1.4 K. The spin polarization of Ni 81 Fe 19 /MgO/InAs as-deposited sample was relealed to be 6.9 %, while increased spin polarization of 8.9 % was observed by additional thermal treatment.

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Electrical detection of spin transport in lateral ferromagnet–semiconductor devices

Cited by 786 publications

References 34 publications

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier

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