Electrical derivative characteristics of InGaAsP buried heterostructure lasers

Wright, P. D.; Joyce, W. B.; Craft, D. C.

doi:10.1063/1.330628

Cited by 52 publications

(12 citation statements)

References 13 publications

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“…In this paper, a typical circuit model [1] used in IdV/dI method is employed to interpret experimental results mentioned in Section 2. The typical equivalent circuit model is presented in Fig.6.…”

Section: Discussionmentioning

confidence: 99%

“…Voltage-current (V-I) is a general indicator to estimate the reliability nondestructively, but they are too insensitive to some microscopic processes. Some references have reported that electrical derivative (IdV/dI-I) is more sensitive than V-I [1][2]. However, they are usually not enough to signal an impending breakdown, even this breakdown occurs.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Method to Estimate Current Leakage of Laser Diodes

Zhang

Guo

Gao

2007

2007 8th International Conference on Electronic Measurement and Instruments

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The low frequency noise (LFN) properties are investigated on the high power 808nm InGaAsP/GaAs quantum well (QW) laser diodes under low bias current (10 -6~1 0 -3 A) in order to estimate the current leakage of semiconductor lasers. For the first time, we investigate the LFN peak under very low bias current. After a short time electrical aging (50 or 150 hours), the right-shifted position of the LFN peak and annealing effect are observed. An equivalent circuit model considering of parallel shunt path is employed to interpret these experimental results. It is concluded that LFN peak under low injected current is sensitive to the mechanisms of microscopic current leakage, and can be used as an indicator of reliability of laser diodes.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Novel Method to Estimate Current Leakage of Laser Diodes

Zhang

Guo

Gao

2007

2007 8th International Conference on Electronic Measurement and Instruments

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“…The increased separation also increases both the minority carrier leakage over the double-heterostructure barrier 16 and the shunt current around a buried active layer. 6,28 Each of these four contributions to the increase in i may have its own temperature dependence. Thus, except for fortunate cases where a single response dominates, any macroscopic black-box activation energy necessarily reflects multiple microscopic processes.…”

Section: Comparison Of Activation and Extrapolation Methodsmentioning

confidence: 99%

Methodology of Accelerated Aging

Joyce

Liou

Nash

et al. 1985

At&T Technical Journal

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Outlines are given for eight alternative black-box (i.e., input-output) meth odologies that are appropriate for estimating, from external characteristics, the reliability of semiconductor lasers or other gradually degrading manufac tured products with lifetimes too long to measure directly over practical time spans. These reliability estimates, which are essential for various components of such systems as submarine communication cables or satellites, are obtained from two classes of data. One class consists of the measured properties of statistically equivalent components, i.e., samples from the manufactured pop ulation, that have been operated to failure or at least to a significant degree of degradation. This degradation is often brought about in a shortened time span through the application of a temperature or other "accelerating stress" that is large compared to the operating temperature or other stress of the intended application. The other class of data is, for each component, comprised of the predeployment properties ofthat very component, including particularly its own predeployment degradation rate (which may also be measured under accelerating stresses). Brief consideration is given in passing to important special cases when only one of these two classes of data is available.

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“…For GaAs-based LED chips, many papers have described a useful simplified electrical circuit or proposed analytic modelling deduced from electrical measurements, where the active zone is generally represented by an ideal diode D hj for a radiative phenomenon and D ho for a non-radiative phenomenon in addition to an overall linear resistance (R s ) 24,[27][28][29] . The value of R s sums the contribution of the contact resistance between the thin metal layer and the semiconductor GaAs N + and P + -doped, and the bulk resistance of the GaAs N + and P + -doped layers 30 . For instance, first-order derivative calculations from I (V ) curves can also reveal the presence of additional series resistance, either linear or nonlinear, the effect of non-ohmic contact and the temperature dependence of the equivalent circuit model.…”

Section: Electrical Characterizationsmentioning

confidence: 99%

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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Electrical derivative characteristics of InGaAsP buried heterostructure lasers

Cited by 52 publications

References 13 publications

A Novel Method to Estimate Current Leakage of Laser Diodes

A Novel Method to Estimate Current Leakage of Laser Diodes

Methodology of Accelerated Aging

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

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