1989
DOI: 10.1016/0379-6779(89)90902-8
|View full text |Cite
|
Sign up to set email alerts
|

Electrical conductivity of black phosphorus-silicon compound

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0
1

Year Published

1991
1991
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 9 publications
(6 citation statements)
references
References 7 publications
0
5
0
1
Order By: Relevance
“…[18,22,23] These synthetic methods were improved by using the more-stable red phosphorus as the starting material and BELTapparatus.T he high-temperature transformation of white phosphorus to BP was investigated in detail by Keyes, [24] who observed that the transformation occurred in af ew minutes at 200 8 8Cu nder 1.3 GPa, and was accompanied by ar eduction in volume.T hese methods involving rapid phase transformation at relatively low temperatures only yield very small crystals and ingots,w ith crystallite sizes below 100 mm. [27][28][29][30][31][32][33][34][35][36][37][38] Significant improvements in the high-pressure/high-temperature synthesis of BP were achieved by using high-pressure apparatus with ac ubic or tetrahedral anvil. [25] In this procedure, white phosphorus was heated at 1230 8 8Ca nd then slowly cooled under apressure of 2.2 GPa.…”
Section: Bulk Black Phosphorusmentioning
confidence: 99%
See 2 more Smart Citations
“…[18,22,23] These synthetic methods were improved by using the more-stable red phosphorus as the starting material and BELTapparatus.T he high-temperature transformation of white phosphorus to BP was investigated in detail by Keyes, [24] who observed that the transformation occurred in af ew minutes at 200 8 8Cu nder 1.3 GPa, and was accompanied by ar eduction in volume.T hese methods involving rapid phase transformation at relatively low temperatures only yield very small crystals and ingots,w ith crystallite sizes below 100 mm. [27][28][29][30][31][32][33][34][35][36][37][38] Significant improvements in the high-pressure/high-temperature synthesis of BP were achieved by using high-pressure apparatus with ac ubic or tetrahedral anvil. [25] In this procedure, white phosphorus was heated at 1230 8 8Ca nd then slowly cooled under apressure of 2.2 GPa.…”
Section: Bulk Black Phosphorusmentioning
confidence: 99%
“…In the 1980s,s everal Japanese groups aimed to improve these procedures so as to obtain large single crystals for detailed characterizations of the electrical transport properties. [27][28][29][30][31][32][33][34][35][36][37][38] Significant improvements in the high-pressure/high-temperature synthesis of BP were achieved by using high-pressure apparatus with ac ubic or tetrahedral anvil. In 1981 Akimoto and co-workers successfully achieved the first high-pressure growth of BP single crystals.…”
Section: Bulk Black Phosphorusmentioning
confidence: 99%
See 1 more Smart Citation
“…Silicon or germanium doped black phosphorus can also be achieved by bismuth-flux method. [20,21] In 1981, large single crystals of black phosphorus was first succeeded from red phosphorus melted at high temperature under high pressure using a wedge-type cubic high-pressure apparatus.…”
Section: Introductionmentioning
confidence: 99%
“…Dieses Verfahren lieferte einzelne Plättchenkristalle mit Größen bis zu 6 mm und Dicken von 0.15 bis 0.25 mm. In den 1980er Jahren arbeiteten mehrere japanische Forschungsgruppen an der Verbesserung dieser Verfahren, um große Einkristalle für die genaue Charakterisierung der elektrischen Transporteigenschaften zu erhalten . Eine wesentliche Verbesserung der Hochdruck‐Hochtemperatursynthese von SP wurde durch Hochdruckvorrichtungen mit kubischem oder tetraedrischem Amboss erzielt.…”
Section: Herstellung Von Schwarzem Phosphorunclassified