Electrical conduction properties of In-doped ZnO thin films

Seri̇n, Tülay; Yıldız, Abdullah; Uzun, Süleyman Utku; Çam, Emrah; Serin, N.

doi:10.1088/0031-8949/84/06/065703

Cited by 45 publications

(22 citation statements)

References 22 publications

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“…TZO films with different Sn contents (3,5,7, and 10 at.%) were deposited on ultrasonically cleaned glass substrates using the spray pyrolysis technique. The coating solution was prepared by dissolving 7.41 g of zinc acetate-2-hydrate [Zn (CH 3 COO) 2 AE2H 2 O] in 75 mL of ethanol.…”

Section: Methodsmentioning

confidence: 99%

“…Details of the method used to extrapolate the band gap can be found elsewhere. 7 We now try to understand the origin of the shift in band gap in the films. For clear illustration, the absolute value of m estimated from Eq.…”

Section: à3mentioning

confidence: 99%

“…These properties of ZnO films can be tuned by varying the dopant such as In, Ni, Co, Al, and Sn. [7][8][9][10][11] Despite some interesting properties, the incorporation of doping atoms deteriorates the optical and electrical properties of ZnO by increased formation of deposition-induced defects. These properties can be efficiently enhanced by varying experimental conditions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

An Understanding of the Band Gap Shrinkage in Sn-Doped ZnO for Dye-Sensitized Solar Cells

Yıldız

ÖZTÜRK

Atılgan

et al. 2017

Journal of Elec Materi

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Sn-doped ZnO (TZO) films were deposited onto glass substrates by a spray pyrolysis technique. The temperature-dependent conductivity measurements and room-temperature Hall effect measurements were carried out, which indicated that the films exhibited a degenerate semiconductor behavior. Band gap energy of the films was studied by transmission measurements. With increasing Sn content, band gap shrinkage was observed. It was determined that this shrinkage was associated with the competition between many body interactions and the Burstein-Moss effect. We concluded that there is a good agreement between experimental results and theoretical calculations in terms of the shift in band gap. Furthermore, the effective mass value based on parabolic band considerations needed to be replaced by one based on nonparabolic band structure of ZnO for higher content of Sn (>3% at.) to correlate the calculations with the results.

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Section: Methodsmentioning

confidence: 99%

Section: à3mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An Understanding of the Band Gap Shrinkage in Sn-Doped ZnO for Dye-Sensitized Solar Cells

Yıldız

ÖZTÜRK

Atılgan

et al. 2017

Journal of Elec Materi

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“…In particular, according to previous reports, In-or Ga-doped ZnO thin films exhibited resistivities as low as *10 -3 X cm, while Al doping lowered the resistivity to the order of 10 -2 X cm [21,22]. However, doping of In in ZnO thin films reveals various issues such as degradation of ZnO crystallinity [23][24][25], deterioration of electrical resistivity with the increase in doping level [24,26,27], decrease in carrier concentration or mobility [28][29][30], and an increase in surface roughness [31]. With increasing In doping from 0.2 to 2.0 wt% [23], and at In concentrations of 1.98 at.…”

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confidence: 98%

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Kim

et al. 2015

J Sol-Gel Sci Technol

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In-doped ZnO thin films were prepared by a sol-gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high Indoping levels, co-doping with Ga and electron beam treatment was demonstrated in this study. When In dopant was added to the ZnO thin film at 0.5 mol%, it increased the carrier concentration, thereby reducing the resistivity of the film. In contrast, further doping by Ga in the presence of In did not significantly change the electrical properties. When electron beam treatment was conducted on ZnO films, the optical band gap was increased and the carrier concentration and mobility were increased. In particular, a 0.5 mol% Indoped ZnO that received electron beam treatment at 2 keV exhibited an electrical resistivity as low as 4.8 9 10 -2 X cm, while 57.1 X cm was obtained from the pristine ZnO thin film. When the ZnO films were applied to crystalline Si solar cells, conversion efficiency significantly increased from 10.37 % for the cell with pristine ZnO thin film to 11.45 % with the In-doped and electron beamtreated ZnO thin film. Graphical Abstract 10

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“…INTRODUCTION Recently, there have been several attempts to understand the outstanding electrical transport properties of metal oxide films. [1][2][3][4][5][6] Since the numerous models explaining transport behavior exist, the analysis of electrical transport properties of these materials is always difficult and controversial. Tin oxide (SnO 2 ) is an interesting and an attractive metal oxide.…”

mentioning

confidence: 99%

Improved conductivity of Sb-doped SnO2 thin films

Alsaç

Yıldız

Seri̇n

et al. 2013

Journal of Applied Physics

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Sb-doped SnO2 thin films at different thickness have been grown by sol-gel dip-coating method. All of the films exhibit degenerate semiconductor behavior and high free carrier concentrations. In the films, electrical transport can be explained reasonably well by assuming the electron-electron interactions (EEIs) contribution to the measured electrical conductivity. Our experimental observations are consistent with the theoretical description of the EEI. The effect of films thickness on the EEI contribution is also discussed. When the thickness of film reaches to 1550 nm, the agreement between the EEI theory and experimental data becomes unsatisfactory.

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Electrical conduction properties of In-doped ZnO thin films

Cited by 45 publications

References 22 publications

An Understanding of the Band Gap Shrinkage in Sn-Doped ZnO for Dye-Sensitized Solar Cells

An Understanding of the Band Gap Shrinkage in Sn-Doped ZnO for Dye-Sensitized Solar Cells

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Improved conductivity of Sb-doped SnO2 thin films

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