Electrical conduction mechanisms of CdTe quantum dots/p-si heterojunction

El-Nahass, M.M.; Youssef, G. M.; Gad, S. A.; Noby, Sohaila Z.

doi:10.1016/j.mssp.2015.05.039

Cited by 5 publications

(3 citation statements)

References 36 publications

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“…The absorption peaks of TiO 2 and SiO 2 are about 864 cm −1 , 1411and 1308 cm −1 respectively. 12 The absorption peaks of CNT are around 1526 and 3772 cm −1 .…”

Section: Methodsmentioning

confidence: 99%

“…The rectification ratio (RR) is the proportion of forwarding current (I F ) to the reverse current (I R ) at a definite voltage, it also indicates that how the diode is good enough to rectify the current. 11,12 Figure 13 represents the relation between RR and forward bias voltage at different temperatures. It is noticeable that RR increases with both temperature and voltage.…”

Section: Electrical Characteristicmentioning

confidence: 99%

“…An FTIR spectrum of the CNT/TiO 2 /SiO 2 /p-Si is exposed in Fig.2. The absorption peaks of TiO 2 and SiO 2 are about 864 cm −1 , 1411and 1308 cm −1 respectively 12. The absorption peaks of CNT are around 1526 and 3772 cm −1 .Figures3a-3ddisplay the variation of capacitance with temperatures at dissimilar voltages and constant frequencies for the CNT/TiO 2 /SiO 2 /p-Si structure.…”

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confidence: 98%

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Negative Capacitance, Negative Resistance in CNT/TiO₂/SiO₂/p-Si Heterostructure for Light-Emitting Diode Applications

Ashery

Gad

Turky

et al. 2021

ECS J. Solid State Sci. Technol.

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The novel in this article is the appearance of negative capacitance at low frequency in this structure carbon nanotube/TiO2/SiO2/p-Si, which has not been studied yet in terms of its structural, electrical, and dielectric properties. The CNT/TiO2/SiO2/p-Si was synthesized as a metal oxide semiconductor (MOS) structure. The structural, electrical, dielectric, and capacitance were investigated by XRD, I-V, and C-V measurements. Besides the electrical properties, we present here a comprehensive study of capacitance and its variation with frequency, voltage, and temperature. Through this study, we can control and tune the capacitance in terms of its value as well as its signal polarity as positive or negative values the tunneling behavior and negative resistance were realized in I-V measurements. The capacitance vs temperature, voltage, and frequency was explored, it takes positive values reaching its maximum of about 2.12 × 10−9–2.4 × 10−7 F at high frequencies from 2 × 107–103 Hz, but at low frequency from 103–10 Hz, it takes high positive and negative values to reach 4 × 10−3–5 × 10−3 F respectively.

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“…The absorption peaks of TiO 2 and SiO 2 are about 864 cm −1 , 1411and 1308 cm −1 respectively. 12 The absorption peaks of CNT are around 1526 and 3772 cm −1 .…”

Section: Methodsmentioning

confidence: 99%

Section: Electrical Characteristicmentioning

confidence: 99%

mentioning

confidence: 98%

See 1 more Smart Citation

Negative Capacitance, Negative Resistance in CNT/TiO₂/SiO₂/p-Si Heterostructure for Light-Emitting Diode Applications

Ashery

Gad

Turky

et al. 2021

ECS J. Solid State Sci. Technol.

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Influence of substrate temperature on the structural, optical properties, and I-V characteristics of n-AgInSe2/p-Si heterojunctions

Shaban,

Mahdy,

Moustafa

et al. 2023

Materials Science and Engineering: B

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Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device

Ashery

Shaban

Gad

et al. 2020

Materials Science in Semiconductor Processing

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Electrical conduction mechanisms of CdTe quantum dots/p-si heterojunction

Cited by 5 publications

References 36 publications

Negative Capacitance, Negative Resistance in CNT/TiO₂/SiO₂/p-Si Heterostructure for Light-Emitting Diode Applications

Negative Capacitance, Negative Resistance in CNT/TiO₂/SiO₂/p-Si Heterostructure for Light-Emitting Diode Applications

Influence of substrate temperature on the structural, optical properties, and I-V characteristics of n-AgInSe2/p-Si heterojunctions

Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device

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Electrical conduction mechanisms of CdTe quantum dots/p-si heterojunction

Cited by 5 publications

References 36 publications

Negative Capacitance, Negative Resistance in CNT/TiO2/SiO2/p-Si Heterostructure for Light-Emitting Diode Applications

Negative Capacitance, Negative Resistance in CNT/TiO2/SiO2/p-Si Heterostructure for Light-Emitting Diode Applications

Influence of substrate temperature on the structural, optical properties, and I-V characteristics of n-AgInSe2/p-Si heterojunctions

Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device

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Product

Resources

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Negative Capacitance, Negative Resistance in CNT/TiO₂/SiO₂/p-Si Heterostructure for Light-Emitting Diode Applications

Negative Capacitance, Negative Resistance in CNT/TiO₂/SiO₂/p-Si Heterostructure for Light-Emitting Diode Applications